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Michael R. Kump

dblp:67/4345 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 1988
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Electronic design automation · 100%
Interdisciplinary, comprehensive, and emerging computing
1 paper
Computational science and engineering · 100%

Topics — the 2 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation › technology computer-aided design
process and device simulation
0.011988
The efficient simulation of coupled point defect and impurity diffusion · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988
Computational science and engineering › numerical simulation
semiconductor process simulation
0.011988
The efficient simulation of coupled point defect and impurity diffusion · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988

Methods — techniques the papers use, named apart from their topics

multigrid · 0.0finite difference · 0.0
YearPublicationVenuePosition
1988 The efficient simulation of coupled point defect and impurity diffusion
abstract
A program has been developed which efficiently solves the coupled diffusion of interstitials, vacancies, and multiple impurity species in two dimensions. Due to the vast differences in diffusivities of the point defects and impurities, two separate spatial grids are used. A coarse grid is sufficient to represent the rapidly diffusing point defects, whereas a much finer grid is necessary to resolve the details of the impurity profile. Independent time steps are automatically selected for each species, permitting this extremely stiff system of diffusion equations to be solved in acceptable CPU time on a minicomputer. The simulation results are used to study the coupled diffusion of point defects and impurities under local oxidation conditions. Comparison with lap and stain measurements on structures with various widths of oxidizing and nitride-masked regions allows accurate values for numerous point defect diffusion parameters to be extracted.>
Michael R. Kump, Robert W. Dutton
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1