VLDB 2026 Research / reviewers in the wild / expert
Hao Lu 0012
dblp:72/5422-12
· DBLP profile ↗
6ranked-venue papers
1as first author
6since 2021 · last 2026
0000-0002-3189-7864ORCID · conflict
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 6 · 1 first-author · 6 since 2021
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Hao Lu 0012, Ling Yang 0003, Bin Hou, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 2 |
| 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Hao Lu 0012, Xiaohua Ma 0001, Longge Deng, Ling Yang 0003, Bin Hou, Yue Hao 0001 |
Sci. China Inf. Sci. | 1 |
| 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Ling Yang 0003, Chunzhou Shi, Bin Hou, Hao Lu 0012, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 8 |
| 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 6 |
| 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 6 |
| 2024 | Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 4 |