A CMOS distributed amplifier with current reuse optimization is presented. Using current reuse technique, the distributed amplifier achieves low power consumption while retaining the same gain-bandwidth product in comparison with standard common-source topology. The DA demonstrates low current consumption of only 12.9 mA with 4 dB gain from 3 to 8 GHz using a 0.18-/spl mu/m CMOS technology. An analog behavior model is also developed for system-level simulation to shorten the design time and increase design quality for future integrated wide-band transceivers.

In this highlight paper, the key structures and devices in nanoelectronics and spintronics are described. The successful realization of magnetic RAM (MRAM) by using nanotechnology has been demonstrated through the integration of 1-Mb chip. In this design, the pseudo spin valve (PSV) technology has been applied. Key quantum devices like quantum dot surface emitting lasers, quantum dot intersubband detectors, and molecular electronics are presented. In the emergent nanobiotechnology, nanodevices fabricated by using biotechnology and nanobiomedical applications using nanoparticles have been addressed. Since universities play important roles in both research and education, innovative nanotechnology education efforts in universities such as the National Nanotechnology Infrastructure Network have been described. Finally, the leading role of the IEEE in promoting worldwide nanotechnology research and education is addressed and future advances in nanotechnology are expected.