This paper presents the design and implementation of a miniaturized, low-noise Magnetic Tunnel Junction (MTJ)-based proximity sensor with a high-performance readout channel. The MTJ-based proximity sensor consists of 1102 circular pillars of 100um diameter arranged in series, providing accurate detection of subtle interactions, such as a finger approaching the sensor. The system exhibits a 54 dB gain and a bandwidth of 1 kHz, with a noise power density of less than 30 nV/√Hz at 100 Hz, ensuring high precision. The proximity sensor demonstrated linear behavior for distances from 18 mm to 45 mm, with a sensitivity sufficient to detect low magnetic field variations. Experimental validation of the sensor shows a high degree of accuracy (R2= 0.9715), confirming its potential for use in touchless control, mobile technology, and industrial applications.

This paper presents a novel approach to reservoir computing (RC) using Granular Vortex-Based Magnetic Tunnel Junctions (GV-MTJs) for temporal applications. GV-MTJs, with their unique magnetic domain configurations and granular structures, provide the necessary fading memory and non-linear dynamics essential for RC. The vortex core’s oscillatory motion within the device allows for temporal correlation of inputs, giving fading memory, while grain-induced non-linear resistance and frequency variations enhance data dimensionality. Our findings indicate that varying device parameters can affect the relaxation time and gyrotropic frequency in both simulation and experiments. Relaxation times range from 100-140 ns and frequencies from 250-100 MHz. Through experiments, the classification error was reduced by 27% for the best sample, others showed limited potential. Due to signal application speed constraints, the fading memory is not fully utilized. However, the inherent RC capabilities of GV-MTJs are validated. This paper highlights the promise of GV-MTJs in neuromorphic computing and suggests avenues for future research to optimise their use in practical applications.

This paper describes how magnetoresistive materials can be optimized and integrated in magnetic field sensor devices. Giant magnetoresistive (GMR) and tunnel magnetoresistive (TMR) can provide advantageous solutions for a wide range of applications, of which some are described here. Considerations on field sensitivities, intrinsic noise mechanisms, biasing, and integration schemes are presented.