Qing Zhu 0013

dblp:74/963-13 · DBLP profile ↗
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5ranked-venue papers
1as first author
5since 2021 · last 2025
0000-0002-3929-7150ORCID · verified

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 5 · 1 first-author · 5 since 2021
YearPublicationVenuePosition
2025 High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
Can Gong, Minhan Mi, Yuwei Zhou, Hanzhen Li, Xinyi Wen, Sirui An, Xiang Du, Qing Zhu 0013, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.12
2024 A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
Sirui An, Minhan Mi, Qing Zhu 0013, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.5
2024 Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias
Qing Zhu 0013, Zhenni Wang, Yuxiang Wei 0006, Ling Yang 0003, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma 0001
Sci. China Inf. Sci.1
2023 Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Qing Zhu 0013, Jiejie Zhu, Minhan Mi, Yuwei Zhou, Ziyue Zhao 0003, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.2
2022 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Xiaohua Ma 0001, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Qing Zhu 0013, Ling Yang 0003, Yue Hao 0001
Sci. China Inf. Sci.8