In this paper, we propose a novel MOSFET parameter extraction method to enable early technology evaluation. The distinguishing feature of the proposed method is that it enables the extraction of MOSFET model parameters using limited and incomplete current–voltage measurements from on-chip monitor circuits. An important step in this method is the use of maximuma posterioriestimation where past measurements of transistors from various technologies are used to learn a prior distribution and its uncertainty matrix for the parameters of the target technology. The framework then utilizes Bayesian inference to facilitate extraction using a very small set of additional measurements. The proposed method is validated using various past technologies and post-silicon measurements for a commercial 28-nm process. The proposed extraction can be used to characterize the statistical variations of MOSFETs with the significant benefit that the restrictions imposed by the backward propagation of variance algorithm are relaxed. We also study the lower bound requirement for the number of transistor measurements needed to extract a full set of parameters for a compact model. Finally, we propose an efficient algorithm for selecting the optimal transistor biases by minimizing a cost function derived from information-theoretic concept of average marginal information gain.

In this paper, we propose a novel MOSFET parameter extraction method to enable early technology evaluation. The distinguishing feature of the proposed method is that it enables the extraction of an entire set of MOSFET model parameters using limited and incomplete IV measurements from on-chip monitor circuits. An important step in this method is the use of maximum-a-posteriori estimation where past measurements of transistors from various technologies are used to learn a prior distribution and its uncertainty matrix for the parameters of the target technology. The framework then utilizes Bayesian inference to facilitate extraction using a very small set of additional measurements. The proposed method is validated using various past technologies and post-silicon measurements for a commercial 28-nm process. The proposed extraction could also be used to characterize the statistical variations of MOSFETs with the significant benefit that some constraints required by the backward propagation of variance (BPV) method are relaxed.

In this paper, we propose a novel integrated circuits performance estimation algorithm through a physical subspace projection and maximum-a-posteriori (MAP) estimation. Our goal is to estimate the distribution of a target circuit performance with very small measurement sample size from on-chip monitor circuits. The key idea in this work is to exploit the fact that simulation and measurement data are physically correlated under different circuit configurations and topologies. First, different groups of measurements are projected to a subspace spanned by a set of physical variables. The projection is achieved by performing a sensitivity analysis of measurement parameters with respect to the subspace variables using a virtual source MOSFET compact model. Then a Bayesian treatment is developed by introducing prior distributions over these subspace variables. Maximum a posteriori estimation is then applied using the prior, and an expectation-maximization (EM) algorithm is used to estimate the circuit performance. The proposed method is validated by postsilicon measurement for a commercial 28-nm process. An average error reduction of 2x is achieved which can be translated to 32x reduction on data size needed for samples on the same die. A 150x and 70x sample size reduction on training dies is also achieved compared to traditional least-square fitting method and least-angle regression method, respectively, without reducing accuracy.