With diminishing energy and delay benefits via CMOS scaling, there is much interest in exploring the use of alternative state variables such as electronic spin. Multiple research efforts are underway exploring both Boolean and non-Boolean design space using spin devices in order to make their energy and delay benefits competitive to CMOS. In this paper, we propose spin channel networks (SCNs) - spin-based circuits that exploit exponential decay of spin current to efficiently realize multi-bit dot product computation. We show that proposed SCNs can be employed with adaptive boosting (AdaBoost) learning algorithm to efficiently realize a binary classifier for breast cancer detection. The proposed SCN implementation achieves 112× and 14× lower energy per decision compared to the conventional all spin logic (ASL) and 20nm CMOS designs, respectively, for identical decision throughput.

No abstract available.

Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the complementary metal-oxide-semiconductor (CMOS) roadmap. Structure and operational principles of these devices are described. Theories used for benchmarking these devices are overviewed, and a general methodology is described for consistent estimates of the circuit area, switching time, and energy. The results of the comparison of the NRI logic devices using these benchmarks are presented.

We aim to provide engineers with an introduction to the nonequilibrium Green's function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical and atomistic effects. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer–Buttiker approach to phase-coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices is between diffusive and phase coherent. We introduce the NEGF approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of structures such as nanotransistors, carbon nanotubes, and nanowires. Applications of the NEGF method in the ballistic and scattering limits to silicon nanotransistors are discussed.