In future memory systems, some regions of memory will be periodically unavailable to the processor. In DRAM systems, this may happen because a rank is busy performing refresh. In non-volatile memory systems, this may happen because a rank is busy draining long-latency writes. Unfortunately, such service interruptions can introduce stalls in all running threads. This is because the operating system spreads the pages of a thread across all memory ranks. Therefore, the probability of a thread accessing data in an unavailable rank is high. This is a performance artifact that has previously not been carefully analyzed. To reduce these stalls, we propose a simple page coloring mechanism that tries to minimize the number of ranks over which a thread's pages are spread. This approach ensures that a service interruption in a single rank only stalls a subset of threads; non-stalled threads even have the potential to run faster at this time because of reduced bus contention. Our analysis shows that this approach is more effective than recent hardware-based mechanisms to deal with such service interruptions. For example, when dealing with service interruptions because of DRAM refresh, the proposed page coloring approach yields an execution time that is 15% lower than the best competing hardware approach.

Several memory vendors are pursuing different kinds of memory cells that can offer high density, non-volatility, high performance, and high endurance. There are several on-going efforts to architect main memory systems with these new NVMs that can compete with traditional DRAM systems. Each NVM has peculiarities that require new microarchitectures and protocols for memory access. In this work, we focus on memristor technology and the sneak currents inherent in memristor crossbar arrays. A read in state-of-the-art designs requires two consecutive reads; the first measures background sneak currents that can be factored out of the current measurement in the second read. This paper introduces a mechanism to reuse the background sneak current measurement for subsequent reads from the same column, thus introducing "open-column" semantics for memristor array access. We also examine a number of data mapping policies that allow the system to balance parallelism and locality. We conclude that on average, it is better to prioritize locality; our best design yields a 20% improvement in read latency and a 26% memory power reduction, relative to the state-of-the-art memristor baseline.

Trusted applications frequently execute in tandem with untrusted applications on personal devices and in cloud environments. Since these co-scheduled applications share hardware resources, the latencies encountered by the untrusted application betray information about whether the trusted applications are accessing shared resources or not. Prior studies have shown that such information leaks can be used by the untrusted application to decipher keys or launch covert-channel attacks. Prior work has also proposed techniques to eliminate information leakage in various shared resources. The best known solution to eliminate information leakage in the memory system incurs high performance penalties. This work develops a comprehensive approach to eliminate timing channels in the memory controller that has two key elements: (i) We shape the memory access behavior of each thread so that it has an unchanging memory access pattern. (ii) We show how efficient memory access pipelines can be constructed to process the resulting memory accesses without introducing any resource conflicts. We mathematically show that the proposed system yields zero information leakage. We then show that various page mapping policies can impact the throughput of our secure memory system. We also introduce techniques to re-order requests from different threads to boost performance without leaking information. Our best solution offers throughput that is 27% lower than that of an optimized non-secure baseline, and that is 69% higher than the best known competing scheme.

Prior work in hardware prefetching has focused mostly on either predicting regular streams with uniform strides, or predicting irregular access patterns at the cost of large hardware structures. This paper introduces the Variable Length Delta Prefetcher (VLDP), which builds up delta histories between successive cache line misses within physical pages, and then uses these histories to predict the order of cache line misses in new pages. One of VLDP's distinguishing features is its use of multiple prediction tables, each of which stores predictions based on a different length of input history. For example, the first prediction table takes as input only the single most recent delta between cache misses within a page, and attempts to predict the next cache miss in that page. The second prediction table takes as input a sequence of the two most recent deltas between cache misses within a page, and also attempts to predict the next cache miss in that page, and so on with additional tables. Longer histories generally yield more accurate predictions, so VLDP prefers to make predictions based on the longest history table that has a matching entry.

Many of the pins on a modern chip are used for power delivery. If fewer pins were used to supply the same current, the wires and pins used for power delivery would have to carry larger currents over longer distances. This results in an "IR-drop" problem, where some of the voltage is dropped across the long resistive wires making up the power delivery network, and the eventual circuits experience fluctuations in their supplied voltage. The same problem also manifests if the pin count is the same, but the current draw is higher. IR-drop can be especially problematic in 3D DRAM devices because (i) low cost (few pins and TSVs) is a high priority, (ii) 3D-stacking increases current draw within the package without providing proportionate room for more pins, and (iii) TSVs add to the resistance of the power delivery network.

Many memory cell technologies are being considered as possible replacements for DRAM and Flash technologies, both of which are nearing their scaling limits. While these new cells (PCM, STT-RAM, FeRAM, etc.) promise high density, better scaling, and non-volatility, they introduce new challenges. Solutions at the architecture level can help address some of these problems; e.g., prior research has proposed wear-leveling and hard error tolerance mechanisms to overcome the limited write endurance of PCM cells. In this paper, we focus on the soft error problem in PCM, a topic that has received little attention in the architecture community. Soft errors in DRAM memories are typically addressed by having SECDED support and a scrub mechanism. The scrub mechanism scans the memory looking for a single-bit error and corrects it before the line experiences a second uncorrectable error. However, PCM (and other emerging memories) are prone to new sources of soft errors. In particular, multi-level cell (MLC) PCM devices will suffer from resistance drift, that increases the soft error rate and incurs high overheads for the scrub mechanism. This paper is the first to study the design of architectural scrub mechanisms, especially when tailored to the drift phenomenon in MLC PCM. Many of our solutions will also apply to other soft-error prone emerging memories. We first show that scrub overheads can be reduced with support for strong ECC codes and a lightweight error detection operation. We then design different scrub algorithms that can adaptively trade-off soft and hard errors. Using an approach that combines all proposed solutions, our scrub mechanism yields a 96.5% reduction in uncorrectable errors, a 24.4 × decrease in scrub-related writes, and a 37.8% reduction in scrub energy, relative to a basic scrub algorithm used in modern DRAM systems.

The DRAM main memory system in modern servers is largely homogeneous. In recent years, DRAM manufacturers have produced chips with vastly differing latency and energy characteristics. This provides the opportunity to build a heterogeneous main memory system where different parts of the address space can yield different latencies and energy per access. The limited prior work in this area has explored smart placement of pages with high activities. In this paper, we propose a novel alternative to exploit DRAM heterogeneity. We observe that the critical word in a cache line can be easily recognized beforehand and placed in a low-latency region of the main memory. Other non-critical words of the cache line can be placed in a low-energy region. We design an architecture that has low complexity and that can accelerate the transfer of the critical word by tens of cycles. For our benchmark suite, we show an average performance improvement of 12.9% and an accompanying memory energy reduction of 15%.