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Steve S. Greenberg

dblp:88/1160 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1990
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 83% Electronic design automation · 17%

Topics — the 5 heaviest of 5, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
charge conservation		 0.011990
A first-order charge conserving MOS capacitance model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1990
Integrated circuit design › analog and mixed-signal circuits
device modeling		 0.011990
A first-order charge conserving MOS capacitance model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1990
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOS capacitance model		 0.011990
A first-order charge conserving MOS capacitance model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1990
Electronic design automation
circuit simulation		 0.011990
A first-order charge conserving MOS capacitance model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1990
Electronic design automation › circuit modeling
device model		 0.011990
A first-order charge conserving MOS capacitance model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1990

Methods — techniques the papers use, named apart from their topics

charge-based modeling · 0.0
YearPublicationVenuePosition
1990 A first-order charge conserving MOS capacitance model
abstract
The Meyer capacitance model (see RCA Rev., vol.32, p.42-63, 1971) fails to obey the charge conservation law. It is shown that the charge nonconservation in the Meyer model is not due to any physical assumptions. Rather, it is caused by the mathematical error of characterizing a multidimensional function (the stored charge on the four terminals of a MOSFET) by an incomplete subset of its partial derivatives (the partial derivatives of the gate charge). This conclusion is supported by developing and implementing a correct mathematical characterization of the MOS charges based on the same physical assumptions used in the Meyer model. One important outcome of this exercise is that the nonreciprocal nature of MOS capacitive coupling is evident even in a first-order physical model of the device.>
Karem A. Sakallah, Yao-Tsung Yen, Steve S. Greenberg
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.3