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T. Hosoi

dblp:93/5652 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1987
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 33% Electronic design automation · 33% Performance modeling and evaluation · 33%
Interdisciplinary, comprehensive, and emerging computing
1 paper
Computational science and engineering · 100%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation › technology computer-aided design › process simulation
dopant diffusion modeling		 0.011987
Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Performance modeling and evaluation › simulation
monte carlo methods		 0.011987
Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Integrated circuit design
semiconductor device modeling		 0.011987
Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Computational science and engineering › numerical simulation
semiconductor process simulation		 0.011987
Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987

Methods — techniques the papers use, named apart from their topics

monte carlo method · 0.0
YearPublicationVenuePosition
1987 Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method
abstract
A methodology of impurity diffusion in semiconductors by the Monte Carlo method has been presented. The simulation is carried out by repeating the motion of both vacancies and self-interstitials with the complementary weighting factor for the jumps of respective point defects. This method is applied to impurity diffusion from a limited source in a virtual semiconductor crystal and its validity is confirmed.
A. Akiyama, T. Hosoi, I. Ishihara, S. Matsumoto, T. Niimi
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.2