Demo Data from SIGIR 2026 / reviewers in the wild / expert
Ling Yang 0003
dblp:01/24-3
· DBLP profile ↗
9ranked-venue papers
0as first author
9since 2021 · last 2026
0000-0001-7284-8180ORCID · conflict
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 9 · 9 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
9 papers |
Integrated circuit design · 90% Hardware reliability and fault tolerance · 7% Emerging computing paradigms · 3% | |
| Computer networks
2 papers |
Physical-layer communications · 100% |
Topics — the 15 heaviest of 19, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
GaN HEMT |
2.0 | 2 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
1.9 | 3 | 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method · Sci. China Inf. Sci. 2022 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026 |
Integrated circuit design
power semiconductor devices |
1.6 | 2 | 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT · Sci. China Inf. Sci. 2025 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Integrated circuit design
analog and mixed-signal circuits |
1.6 | 2 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices
compound semiconductor devices |
1.0 | 1 | 2026 | High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026 |
Integrated circuit design › power semiconductor devices
high-power device |
1.0 | 1 | 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026 |
Integrated circuit design › analog and mixed-signal circuits
RF power amplifier |
1.0 | 1 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT |
0.8 | 1 | 2024 | Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure · Sci. China Inf. Sci. 2024 |
Hardware reliability and fault tolerance
device reliability |
0.8 | 1 | 2024 | Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes |
0.8 | 1 | 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Emerging computing paradigms
optical computing |
0.5 | 1 | 2021 | Recent progress of integrated circuits and optoelectronic chips · Sci. China Inf. Sci. 2021 |
Integrated circuit design
optoelectronic integrated circuits |
0.5 | 1 | 2021 | Recent progress of integrated circuits and optoelectronic chips · Sci. China Inf. Sci. 2021 |
Integrated circuit design
photonic integrated circuits |
0.5 | 1 | 2021 | Recent progress of integrated circuits and optoelectronic chips · Sci. China Inf. Sci. 2021 |
Physical-layer communications › receiver design
RF front-end |
0.3 | 1 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor devices
semiconductor device physics |
0.2 | 1 | 2024 | Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
recessed gate oxidation · 2.0polycrystalline-aln cap · 1.0graded-AlGaN/graded-InGaN/GaN HEMTs · 1.0gate leakage analysis · 0.9electrical characterization · 0.9ion implantation · 0.8electrostatic shielding · 0.8silicon photonics · 0.5heterogeneous integration · 0.5
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Hao Lu 0012, Ling Yang 0003, Bin Hou, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |
| 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Hao Lu 0012, Xiaohua Ma 0001, Longge Deng, Ling Yang 0003, Bin Hou, Yue Hao 0001 |
Sci. China Inf. Sci. | 4 |
| 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Ling Yang 0003, Chunzhou Shi, Bin Hou, Hao Lu 0012, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 2 |
| 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |
| 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |
| 2024 | Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 2 |
| 2024 | Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias
Qing Zhu 0013, Zhenni Wang, Yuxiang Wei 0006, Ling Yang 0003, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma 0001 |
Sci. China Inf. Sci. | 4 |
| 2022 | Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Xiaohua Ma 0001, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Qing Zhu 0013, Ling Yang 0003, Yue Hao 0001 |
Sci. China Inf. Sci. | 9 |
| 2021 | Recent progress of integrated circuits and optoelectronic chips
Yue Hao 0001, Genquan Han, Jincheng Zhang 0001, Xiaohua Ma 0001, Zhangming Zhu, Yanan Han, Ling Yang 0003, Jiangyi Shi, Wei Zhang 0343, Biao Pan, Yangqi Huang, Qi Liu 0010, Yimao Cai, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao 0006, Guoping Guo, Yonghua Chen, Xiangfei Chen, Chunlai Xue, Lixia Zhao, Xihua Zou, Lianshan Yan |
Sci. China Inf. Sci. | 12 |