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Srikumar Raman

dblp:115/8495 · DBLP profile ↗
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2ranked-venue papers
0as first author
0since 2021 · last 2015
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1Applied, interdisciplinary, general and emerging computing · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 2 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › analog and mixed-signal circuits › data converters
analog-to-digital converter
0.212015
High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology · Proc. IEEE 2015
Integrated circuit design › semiconductor devices
heterojunction bipolar transistor
0.112015
High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology · Proc. IEEE 2015

Methods — techniques the papers use, named apart from their topics

polyphase filtering · 0.2SiGe BiCMOS · 0.2
YearPublicationVenuePosition
2015 High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology
abstract
In this paper, we discuss the advantages and opportunities presented by high-speed (> 50 GHz) reconfigurable integrated circuits and how they may drive reconfigurable systems applications, such as software-defined radio, radar, and imaging. We propose silicon-germanium (SiGe) BiCMOS as an example technology that enables ultrafast reconfigurable systems and present several circuit designs based on SiGe heterojunction bipolar transistors (HBTs). We compare circuit designs between generations of IBM's SiGe process, including a recent 9HP process featuring devices with a cutoff frequency (fT) of 300 GHz. We describe an architecture for an 8-b 80-Gs/s analog-to-digital converter (ADC) and a 48 × 48 cell field programmable gate array (FPGA), which provide powerful solutions for useful functions, such as digital signal processing (DSP) and polyphase filtering. Other circuit concepts are described, including a voltage-controlled oscillator (VCO) with a tuning range of 26 GHz and a high-performance (80 Gb/s) crossbar switch, which provide utility in reconfigurable system applications. Measured results from fabricated implementations of these described systems are presented. We comment on future prospects of these systems and examine an emerging lateral bipolar device (fT1/4 825 GHz) having 100x less power consumption than conventional vertical HBTs.
Mitchell R. LeRoy, Srikumar Raman, Michael Chu, Jin Woo Kim, Jong-Ru Guo, Kuan Zhou, Chao You, Ryan Clarke, Bryan S. Goda, John F. McDonald 0001
Proc. IEEE2
2012 A three-dimensional DRAM using floating body cell in FDSOI devices
abstract
This paper describes the capacitorless 1-transistor (1T) DRAMs exploits the floating body (FB) effect of Fully depleted (FD) SOI devices, where the transistor body is used as a charge storage node. A novel three-tier, 3D, 1T embedded DRAM is presented that can be vertically integrated with the microprocessor achieving low cost, high density on-chip main memory. A 394Kbits test chip is designed and fabricated in a 0.15um fully depleted SOI CMOS process. The measured retention time under holding conditions is higher than 10ms. In the continuous read mode, every read should be followed by a refresh. The test chip is designed to work with an access time of 50ns and operates at 10MHz.
Xuelian Liu, Aamir Zia, Mitchell R. LeRoy, Srikumar Raman, Ryan Clarke, Russell P. Kraft, John F. McDonald 0001
DDECS4