Demo Data from SIGIR 2026 / reviewers in the wild / expert
Ansgar Laubsch
dblp:122/4079
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 2010
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
heterostructure devices |
0.1 | 1 | 2010 | ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology · Proc. IEEE 2010 |
Integrated circuit design › optoelectronic devices
light-emitting diodes |
0.1 | 1 | 2010 | ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology · Proc. IEEE 2010 |
Integrated circuit design
optoelectronic devices |
0.1 | 1 | 2010 | ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology · Proc. IEEE 2010 |
Methods — techniques the papers use, named apart from their topics
p-type doping · 0.1inverted LED concept · 0.1
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2010 | ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED TechnologyabstractReliable and reproducible p-type doping is the main challenge for fabricating highly efficient ZnO-based light-emitting diodes. During the last few years, the lack of reliable p-type conductivity in ZnO has initiated research concerning the combination of ZnO and other semiconductors, which can then be doped p-type. One of these concepts is the combination of ZnO with GaN heterostructures aiming at the fabrication of hybrid LEDs. We discuss the problems as well as potential benefits from a combination of ZnO and GaN hybrid heterostructures in a single device. We also present our recent results on ZnO-GaN hybrid LEDs using an inverted LED concept. The hybrid LEDs have an external quantum efficiency of more than 35%. Andrey Bakin, Arne Behrends, Andreas Waag, Hans-Jürgen Lugauer, Ansgar Laubsch, Klaus Streubel |
Proc. IEEE | 5 |