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Yasushi Nanishi

dblp:122/4198 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 2010
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor devices › GaN HEMT
gallium nitride device
0.112010
Challenges and Opportunities in GaN and ZnO Devices and Materials · Proc. IEEE 2010
Integrated circuit design › semiconductor devices
semiconductor device technology
0.112010
Challenges and Opportunities in GaN and ZnO Devices and Materials · Proc. IEEE 2010
Integrated circuit design › semiconductor technology
semiconductor materials
0.012010
Challenges and Opportunities in GaN and ZnO Devices and Materials · Proc. IEEE 2010
Integrated circuit design › semiconductor devices
wide bandgap semiconductor devices
0.012010
Challenges and Opportunities in GaN and ZnO Devices and Materials · Proc. IEEE 2010
YearPublicationVenuePosition
2010 Challenges and Opportunities in GaN and ZnO Devices and Materials
abstract
This special issue addresses to a large extent the challenges and opportunities in GaN and ZnO devices and materials deemed critical to both the GaN- and ZnO-based technologies. There are twenty articles in this special issue.
Hadis Morkoç, Jen-Inn Chyi, Alois Krost, Yasushi Nanishi, Donald J. Silversmith
Proc. IEEE4