The liver is a vital organ involving in various major metabolic functions in human body. MicroRNA-122 (miR-122) plays an important role in the regulation of liver metabolism, but its intrinsic physiological functions require further clarification. This study integrated the genome-scale metabolic model of hepatocytes and mouse experimental data with germline deletion of Mir122a (Mir122a-/-) to infer Warburg-like effects. Elevated expression of MiR-122a target genes in Mir122a-/-mice, especially those encoding for metabolic enzymes, was applied to analyze the flux distributions of the genome-scale metabolic model in normal and deficient states. By definition of the similarity ratio, we compared the flux fold change of the genome-scale metabolic model computational results and metabolomic profiling data measured through a liquid-chromatography with mass spectrometer, respectively, for hepatocytes of 2-month-old mice in normal and deficient states. The Ddc gene demonstrated the highest similarity ratio of 95% to the biological hypothesis of the Warburg effect, and similarity of 75% to the experimental observation. We also used 2, 6, and 11 months of mir-122 knockout mice liver cell to examined the expression pattern of DDC in the knockout mice livers to show upregulated profiles of DDC from the data. Furthermore, through a bioinformatics (LINCS program) prediction, BTK inhibitors and withaferin A could downregulate DDC expression, suggesting that such drugs could potentially alter the early events of metabolomics of liver cancer cells.

In this paper, we show the many advantages of the GaN-based vertical light-emitting diodes (VLEDs) on metal alloy over conventional LEDs in terms of: better current spreading, vertical current path for low operation voltage, better light extraction, flexible chip size scaling, higher driving current density, faster heat dissipation, and good reliability. The GaN VLED on metal alloy exhibits very good current–voltage behavior with low operated voltage and low serial dynamic resistance. The low operation junction temperature of GaN VLED on metal alloy demonstrates excellent heat dissipation capabilities. Chip size scaling without efficiency loss shows a unique property of GaN VLED on metal alloy. The GaN VLED on metal alloy also enables top surface engineering for efficient light extraction to further light output. A high-power white LED having efficiency of 120 lumen/W was achieved through a combination of reflector, surface engineering, and optimization of the n-GaN layer thickness. Coupled with good reliability and mass production ability, the GaN VLED on metal alloy is very suitable for general lighting application.