Demo Data from SIGIR 2026 / reviewers in the wild / expert
Fred A. Kish
dblp:145/1015
· DBLP profile ↗
2ranked-venue papers
0as first author
0since 2021 · last 2013
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 2 heaviest of 2, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › optoelectronic devices
light-emitting diodes |
0.0 | 1 | 1997 | High-brightness AlGaInP light emitting diodes · Proc. IEEE 1997 |
Integrated circuit design
optoelectronic devices |
0.0 | 1 | 1997 | High-brightness AlGaInP light emitting diodes · Proc. IEEE 1997 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2013 | 50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue]abstractThe articles in this special issue focus on the history and development of light emitting diode (LED) technology and industry applications over the last fifty years. M. George Craford, Russell D. Dupuis, Milton Feng, Fred A. Kish, Joy Laskar |
Proc. IEEE | 4 |
| 1997 | High-brightness AlGaInP light emitting diodesabstractFirst commercially introduced in 1990, AlGaInP light emitting diodes (LEDs) currently are the highest (luminous) efficiency visible solid-state emitters produced to date in the red through yellow spectral regime. The attainment of this high-efficiency performance is a result of the development of advanced metalorganic chemical vapor deposition crystal growth techniques, which have facilitated the high-quality growth of this quaternary alloy as well as the implementation of complex device designs. Furthermore, the highest efficiency family of AlGaInP devices (based upon a transparent-substrate platform and commercially introduced in 1994) have been realized as result of the development and implementation of direct compound semiconductor wafer bonding technology. As a result, the luminous efficiency of AlGaInP LEDs exceeds or rivals that of unfiltered incandescent lamps and other conventional lighting sources. Further improvements in these techniques (and the realization of efficient, high-power LEDs) are expected to make AlGaInP LEDs even more competitive with conventional lamp technology, thus enhancing the position of LED's in many applications as a preferred lighting source. D. A. Vanderwater, I.-H. Tan, Gloria E. Hoefler, D. C. Defevere, Fred A. Kish |
Proc. IEEE | 5 |