Demo Data from SIGIR 2026 / reviewers in the wild / expert
Richard H. Bergman
dblp:182/9792
· DBLP profile ↗
1ranked-venue papers
1as first author
0since 2021 · last 1960
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
digital circuit design |
0.0 | 1 | 1960 | Tunnel Diode Logic Circuits · IRE Trans. Electron. Comput. 1960 |
Integrated circuit design › digital circuit design › logic design
logic circuits |
0.0 | 1 | 1960 | Tunnel Diode Logic Circuits · IRE Trans. Electron. Comput. 1960 |
Integrated circuit design › digital circuit design › logic families
tunnel diode logic circuits |
0.0 | 1 | 1960 | Tunnel Diode Logic Circuits · IRE Trans. Electron. Comput. 1960 |
Methods — techniques the papers use, named apart from their topics
switching time analysis · 0.0negative resistance-capacitance analysis · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1960 | Tunnel Diode Logic CircuitsabstractThe recent discovery of the tunnel diode with band-widths extending into the kilomegacycle region has prompted investigation of their use in the logic and control portions of high-speed computers. Considerations of diode uniformity requirements, stability problems and power supply requirements has led to a monostable type of logical circuit. The switching properties of this circuit are analyzed and found to depend upon the negative resistance-capacitance time constant of the unit. The basic function performed by the circuit is a thresholding operation from which a set of logical building blocks is derived. Compatible dynamic and bistable storage schemes are discussed. Of major importance is the effect of diode variations upon the logical gains and delays of the circuits. These properties have been tabulated for tunnel diodes with 5 per cent tolerances on knee current and voltage. Experimental circuits using diodes with a time constant of 1.4 nanoseconds have given a nominal switching time of 7.5 nanoseconds. Richard H. Bergman |
IRE Trans. Electron. Comput. | 1 |