Demo Data from SIGIR 2026 / reviewers in the wild / expert
Gerald Wedel
dblp:201/1647
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 2017
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 88% Hardware reliability and fault tolerance · 12% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
0.3 | 1 | 2017 | Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications · Proc. IEEE 2017 |
Integrated circuit design › semiconductor devices
heterojunction bipolar transistor |
0.3 | 1 | 2017 | Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications · Proc. IEEE 2017 |
Hardware reliability and fault tolerance
device reliability |
0.1 | 1 | 2017 | Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications · Proc. IEEE 2017 |
Integrated circuit design
semiconductor device modeling |
0.1 | 1 | 2017 | Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications · Proc. IEEE 2017 |
Methods — techniques the papers use, named apart from their topics
thermal modeling · 0.3HF measurement · 0.3
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2017 | Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz ApplicationsabstractThis paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed. Pascal Chevalier 0002, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer |
Proc. IEEE | 17 |