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Muhammad Sharique

dblp:204/3596 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 2017
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Databases, data management, data science and information retrieval · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Memory systems · 77% Storage systems · 23%
Databases, data mining, and information retrieval
1 paper
Indexing and storage engines · 100%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Indexing and storage engines › storage management
non-volatile memory integration
0.312017
SAP HANA Adoption of Non-Volatile Memory · Proc. VLDB Endow. 2017
Memory systems
non-volatile memory
0.312017
SAP HANA Adoption of Non-Volatile Memory · Proc. VLDB Endow. 2017
Storage systems › storage reliability
durability
0.112017
SAP HANA Adoption of Non-Volatile Memory · Proc. VLDB Endow. 2017

Methods — techniques the papers use, named apart from their topics

byte-addressable NVRAM · 0.6
YearPublicationVenuePosition
2017 SAP HANA Adoption of Non-Volatile Memory
abstract
Non-Volatile RAM (NVRAM) is a novel class of hardware technology which is an interesting blend of two storage paradigms: byte-addressable DRAM and block-addressable storage (e.g. HDD/SSD). Most of the existing enterprise relational data management systems such as SAP HANA have their internal architecture based on the inherent assumption that memory is volatile and base their persistence on explicit handling of block-oriented storage devices. In this paper, we present the early adoption of Non-Volatile Memory within the SAP HANA Database, from the architectural and technical angles. We discuss our architectural choices, dive deeper into a few challenges of the NVRAM integration and their solutions, and share our experimental results. As we present our solutions for the NVRAM integration, we also give, as a basis, a detailed description of the relevant HANA internals.
Mihnea Andrei, Christian Lemke, Günter Radestock, Robert Schulze, Carsten Thiel, Rolando Blanco, Akanksha Meghlan, Muhammad Sharique, Sebastian Seifert, Surendra Vishnoi, Daniel Booss, Thomas Peh, Ivan Schreter, Werner Thesing, Mehul Wagle, Thomas Willhalm
Proc. VLDB Endow.8