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Tsutomu Noguchi

dblp:221/3030 · DBLP profile ↗
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2ranked-venue papers
1as first author
0since 2021 · last 2013
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Computer networks · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer networks
1 paper
Physical-layer communications · 77% Vehicular, aerial and satellite networks · 23%

Topics — the 2 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Physical-layer communications › RF circuit design
power amplifier
0.011983
A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications · IEEE J. Sel. Areas Commun. 1983
Vehicular, aerial and satellite networks
satellite communication
0.011983
A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications · IEEE J. Sel. Areas Commun. 1983

Methods — techniques the papers use, named apart from their topics

internal matching · 0.0deep recess gate structure · 0.0
YearPublicationVenuePosition
2013 Proposal for ultra-high speed scheduling architecture
abstract
It has recently become more difficult for packet processing switches, which have very high speed interface cards, to achieve rich Quality of Service (QoS) functions because such high-speed switches have insufficient packet processing times. In particular, the scheduler/shaper is one of the greatest hindrances to increasing the speed of processing because it selects a suitable queue based on complex algorithms (e.g., weighted round robin (WRR) or strict priority (SP)) in a limited time. One solution that mitigates this scheduling/shaping speed problem is burst packet processing. However, burst packet processing has several side effects. We analyze these side effects and propose a scheduling architecture that minimizes them. We also show the effectiveness of our proposed architecture based on simulation results.
Kazuto Nishimura, Atsushi Kitada, Hiroshi Tomonaga, Tsutomu Noguchi
APCC4
1983 A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications
abstract
GaAs FET amplifier modules for 20 GHz band satellite communications have been developed using newly developed power FETs. The deep recess gate structure was adopted in the power FET, which improved both power output capability and power gain. Power added efficiency of 22 percent with more than 1 W power output has been achieved with 3 mm gate width FETs. The amplifier modules containing two-stage internally matched FET's can be hermetically sealed in metal packages. The modules had 8.4-8.9 dB linear gain in the 17.7-18.8 GHz band and 7.9-8.4 dB linear gain in the 18.5-19.6 GHz band. The power output at 1 dB gain compression point was more than 0.5 W. The third-order intermodulation distortion ratio was 81-83 dB at 18.2 GHz and 77-80 dB at 18.9 GHz, when individual output signal power was -4 dBm.
Tsutomu Noguchi, Yoichi Aono, Kenzi Watanabe, Shozaburo Kameda
IEEE J. Sel. Areas Commun.1