Demo Data from SIGIR 2026 / reviewers in the wild / expert
Jielong Liu
dblp:223/1328
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2024
0000-0001-5020-7219ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% | |
| Computer networks
1 paper |
Physical-layer communications · 100% |
Topics — the 3 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
1.3 | 2 | 2024 | A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness · Sci. China Inf. Sci. 2024 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.6 | 1 | 2022 | Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices
semiconductor device engineering |
0.2 | 1 | 2024 | A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
TCAD simulation · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2024 | A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
Sirui An, Minhan Mi, Qing Zhu 0013, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 8 |
| 2022 | Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Xiaohua Ma 0001, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Qing Zhu 0013, Ling Yang 0003, Yue Hao 0001 |
Sci. China Inf. Sci. | 6 |