Demo Data from SIGIR 2026 / reviewers in the wild / expert
Lingjie Qin
dblp:271/9451
· DBLP profile ↗
2ranked-venue papers
1as first author
2since 2021 · last 2025
0009-0004-3602-4722ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 1 first-author · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% |
Topics — the 2 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.9 | 1 | 2025 | High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts · Sci. China Inf. Sci. 2025 |
Integrated circuit design
semiconductor devices |
0.9 | 1 | 2025 | High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts · Sci. China Inf. Sci. 2025 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
Jiejie Zhu, Dayan Yuan, Lingjie Qin, Mingchen Zhang, Qingyuan Chang, Chupeng Yi |
Sci. China Inf. Sci. | 7 |
| 2025 | Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG
Lingjie Qin, Jiejie Zhu, Huantao Duan, Huimei Ma, Simei Huang, Jin Rao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 1 |