Data movement between the main memory and the processor is a key contributor to execution time and energy consumption in memory-intensive applications. This data movement bottleneck can be alleviated using Processing-in-Memory (PiM). One category of PiM is Processing-using-Memory (PuM), in which computation takes place inside the memory array by exploiting intrinsic analog properties of the memory device. PuM yields high performance and energy efficiency, but existing PuM techniques support a limited range of operations. As a result, current PuM architectures cannot efficiently perform some complex operations (e.g., multiplication, division, exponentiation) without large increases in chip area and design complexity. To overcome these limitations of existing PuM architectures, we introduce pLUTo (processing-using-memory with lookup table (LUT) operations), a DRAM-based PuM architecture that leverages the high storage density of DRAM to enable the massively parallel storing and querying of lookup tables (LUTs). The key idea of pLUTo is to replace complex operations with low-cost, bulk memory reads (i.e., LUT queries) instead of relying on complex extra logic. We evaluate pLUTo across 11 real-world workloads that showcase the limitations of prior PuM approaches and show that our solution outperforms optimized CPU and GPU base-lines by an average of $713 \times$ and $1.2 \times$, respectively, while simultaneously reducing energy consumption by an average of $1855 \times$ and $39.5 \times$. Across these workloads, pLUTo outperforms state-of-the-art PiM architectures by an average of $18.3 \times$. We also show that different versions of pLUTo provide different levels of flexibility and performance at different additional DRAM area overheads (between 10.2% and 23.1%). pLUTo’s source code and all scripts required to reproduce the results of this paper are openly and fully available at https://github.com/CMU-SAFARI/pLUTo.

Processing-using-DRAM has been proposed for a limited set of basic operations (i.e., logic operations, addition). However, in order to enable full adoption of processing-using-DRAM, it is necessary to provide support for more complex operations. In this paper, we propose SIMDRAM, a flexible general-purpose processing-using-DRAM framework that (1) enables the efficient implementation of complex operations, and (2) provides a flexible mechanism tosupport the implementation of arbitrary user-defined operations. The SIMDRAM framework comprises three key steps. The first step builds an efficient MAJ/NOT representation of a given desired operation. The second step allocates DRAM rows that are reserved for computation to the operation’s input and output operands, and generates the required sequence of DRAM commands to perform the MAJ/NOT implementation of the desired operation in DRAM. The third step uses the SIMDRAM control unit located inside the memory controller to manage the computation of the operation from start to end, by executing the DRAM commands generated in the second step of the framework. We design the hardware and ISA support for SIMDRAM framework to (1) address key system integration challenges, and (2) allow programmers to employ new SIMDRAM operations without hardware changes.

Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes across the entire memory, and 2) fault tolerance, to correct memory cell failures. However, one of the main open challenges in extending the lifetime of existing resistive memories is to make both techniques work together seamlessly and efficiently. To address this challenge, we propose WoLFRaM, a new mechanism that combines both wear-leveling and fault tolerance techniques at low cost by using a programmable resistive address decoder (PRAD). The key idea of WoLFRaM is to use PRAD for implementing 1) a new efficient wear-leveling mechanism that remaps write accesses to random physical locations on the fly, and 2) a new effiCient fault tolerance mechanism that recovers from faults by remapping failed memory blocks to available physical locations. Our evaluations show that, for a Phase Change Memory (PCM) based system with cell endurance of 108writes, WoLFRaM increases the memory lifetime by 68% compared to a baseline that implements the best state-of-the-art wear-leveling and fault correction mechanisms. WoLFRaM's average / worst-case performance and energy overheads are 0.51% /3.8% and 0.47% /2.1% respectively.