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Zhaoxi Wu

dblp:277/0095 · DBLP profile ↗
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4ranked-venue papers
1as first author
4since 2021 · last 2023
—ORCID · unresolved

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021Systems, architecture and hardware · 1 · 1 first-author · 1 since 2021Databases, data management, data science and information retrieval · 1 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Integrated circuit design · 59% Hardware reliability and fault tolerance · 41%

Topics — the 6 heaviest of 6, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
analog and mixed-signal circuits		 0.612022
Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor		 0.612022
Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022
Hardware reliability and fault tolerance
radiation effects		 0.612022
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022
Hardware reliability and fault tolerance › radiation effects
single event effects		 0.612022
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022
Integrated circuit design
power semiconductor devices		 0.322022
Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022
Integrated circuit design › semiconductor devices
GaN HEMT		 0.212022
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022

Methods — techniques the papers use, named apart from their topics

reverse-blocking design · 0.6heavy ion irradiation testing · 0.6drain field plate · 0.6
YearPublicationVenuePosition
2023 Capo: Calibrating Device-to-Device Positioning with a Collaborative Network
Kao Wan, Zhaoxi Wu, Xiaotao Zheng, Tong Li 0014
 WISE2
2022 Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
Yinhe Wu, Jincheng Zhang 0001, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Dujun Zhao, Yue Hao 0001
 Sci. China Inf. Sci.4
2022 Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Dujun Zhao, Zhaoxi Wu, Bo Mei, Zhongxu Wang, Yinhe Wu, Shenglei Zhao, Jincheng Zhang 0001, Yue Hao 0001
 Sci. China Inf. Sci.2
2021 Optimizing job completion time with fairness in large-scale data centers
Zhaoxi Wu, Liqun Fu 0001
 Future Gener. Comput. Syst.1