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Ilho Myeong

dblp:279/3198 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 2020
0000-0002-3662-0231ORCID · reported

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 67% Electronic design automation · 33%
Computer networks
1 paper
Physical-layer communications · 100%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
analog and mixed-signal circuits
0.412020
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2020
Integrated circuit design › analog and mixed-signal circuits
device modeling
0.412020
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2020
Electronic design automation › signal integrity
noise modeling
0.412020
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2020
Physical-layer communications
signal processing for communications
0.112020
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2020

Methods — techniques the papers use, named apart from their topics

noise parameter measurement · 0.9analytical extraction · 0.9
YearPublicationVenuePosition
2020 A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models
abstract
This article presents a method for extracting a channel thermal noise (Sid) using analytical equations and measured noise parameters. Among the four noise parameters considered (Rn, Gopt, Bopt, and NFmin), the equations of Rn and NFmin were used to extract Sid, since the Sid extracted from Gopt and Bopt was affected more by measurement variations. NTNOI, the noise enhancement factor of the charge-based thermal model of a Berkeley short-channel IGFET model 4 (BSIM4), was modeled as a gate-bias-dependent function to reproduce Sid extracted from the measured noise parameters. Regarding the accuracy of the proposed model, while the error rate was found to vary slightly depending on the device dimensions (finger number), the new model showed only 4% error for rn, compared to the default model's error of 41% obtained with NTNOI fixed at 1. In addition, the accuracy of Gopt, Bopt, and NFmin is substantially higher than that of the default model. Finally, the modeling technique using the holistic model, another BSIM4 thermal noise model, was briefly discussed.
Ilho Myeong, Juhyun Kim, Hyungwoo Ko, Ickhyun Song, Yongseok Kim, Hyungcheol Shin
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1