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Adrian R. Powell

dblp:299/6223 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 2002
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 2 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor technology
semiconductor materials		 0.012002
SiC materials-progress, status, and potential roadblocks · Proc. IEEE 2002
Integrated circuit design › optoelectronic devices
light-emitting diodes		 0.012002
SiC materials-progress, status, and potential roadblocks · Proc. IEEE 2002

Methods — techniques the papers use, named apart from their topics

substrate growth · 0.0epitaxial growth · 0.0
YearPublicationVenuePosition
2002 SiC materials-progress, status, and potential roadblocks
abstract
SiC materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices for S and X band. Applications for heteroepitaxial GaN-based structures on SiC substrates include LEDs and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.
Adrian R. Powell, Larry B. Rowland
 Proc. IEEE1