Demo Data from SIGIR 2026 / reviewers in the wild / expert
Zhi-Yu Lin
dblp:328/6639
· DBLP profile ↗
1ranked-venue papers
0as first author
1since 2021 · last 2024
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1 · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT |
0.8 | 1 | 2024 | Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices
GaN HEMT |
0.8 | 1 | 2024 | Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate · Sci. China Inf. Sci. 2024 |
Integrated circuit design
semiconductor devices |
0.8 | 1 | 2024 | Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
fe doping · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2024 | Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate
Zhi-Yu Lin, Yuan-Hang Sun, Long Yue, Yu-Min Zhang |
Sci. China Inf. Sci. | 2 |