Demo Data from SIGIR 2026 / reviewers in the wild / expert
Gerald J. Iafrate
dblp:328/6665
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 1988
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 2 heaviest of 2, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
semiconductor device physics |
0.0 | 1 | 1988 | Theory and applications of near ballistic transport in semiconductors · Proc. IEEE 1988 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.0 | 1 | 1988 | Theory and applications of near ballistic transport in semiconductors · Proc. IEEE 1988 |
Methods — techniques the papers use, named apart from their topics
transport theory · 0.0device modeling · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1988 | Theory and applications of near ballistic transport in semiconductorsabstractA review of electronic transport in semiconductors in the near ballistic regime is presented. Recent experiments and theories are discussed in detail. It is shown that the basic physics of ballistic transport is qualitatively well understood. Quantitatively much work remains to be done, especially with respect to device applications. Some problems related to applications are discussed in context with hot-electron- and high-electron-mobility-transistors.> Karl Hess, Gerald J. Iafrate |
Proc. IEEE | 2 |