Demo Data from SIGIR 2026 / reviewers in the wild / expert
F. A. Myers
dblp:328/6818
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 1987
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 2 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › diode
IMPATT diode |
0.0 | 1 | 1987 | Near state-of-the-art power in p+-n-n+D-band IMPATT diode on a wafer with ramped n-n+interface · Proc. IEEE 1987 |
Integrated circuit design
semiconductor device fabrication |
0.0 | 1 | 1987 | Near state-of-the-art power in p+-n-n+D-band IMPATT diode on a wafer with ramped n-n+interface · Proc. IEEE 1987 |
Methods — techniques the papers use, named apart from their topics
resistive heating · 0.0diffusion · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1987 | Near state-of-the-art power in p+-n-n+D-band IMPATT diode on a wafer with ramped n-n+interfaceabstractFabrication of near state-of-the-art (P0= 110 mW, η = 4.85 percent p+-n-n+D band (f = 124 GHz) Si IMPATT diode on a wafer with ramped n-n+interface is described. Introduction of a critical annealing step, prior to p+diffusion, in the fabrication sequence of the diode has been found to yield the above results. Possible reasons for power and efficiency enhancement has been discussed. J. K. Singh, H. S. Gokgor, A. M. Howard, F. A. Myers |
Proc. IEEE | 4 |