Demo Data from SIGIR 2026 / reviewers in the wild / expert
Cuimei Wang
dblp:36/5698
· DBLP profile ↗
3ranked-venue papers
0as first author
2since 2021 · last 2025
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
3 papers |
Emerging computing paradigms · 47% Hardware accelerators and domain-specific architectures · 27% Hardware reliability and fault tolerance · 14% |
Topics — the 6 heaviest of 8, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Emerging computing paradigms
neuromorphic computing |
0.8 | 1 | 2024 | Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network · Sci. China Inf. Sci. 2024 |
Emerging computing paradigms › neuromorphic computing
spiking neural network |
0.8 | 1 | 2024 | Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network · Sci. China Inf. Sci. 2024 |
Hardware reliability and fault tolerance › process variation
device variation |
0.2 | 1 | 2024 | Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network · Sci. China Inf. Sci. 2024 |
Hardware reliability and fault tolerance
soft errors |
0.2 | 1 | 2024 | Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.1 | 1 | 2005 | Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates · Sci. China Ser. F Inf. Sci. 2005 |
Integrated circuit design
semiconductor devices |
0.1 | 1 | 2005 | Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates · Sci. China Ser. F Inf. Sci. 2005 |
Methods — techniques the papers use, named apart from their topics
epitaxial growth · 0.1characterization · 0.1
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration
Lin Bao, Haisu Zhang, Zongwei Wang 0001, Linbo Shan, Cuimei Wang, Yimao Cai, Shanguo Huang |
Sci. China Inf. Sci. | 5 |
| 2024 | Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network
Lindong Wu, Zongwei Wang 0001, Lin Bao, Linbo Shan, Zhizhen Yu, Yunfan Yang, Shuangjie Zhang, Guandong Bai, Cuimei Wang, John Robertson, Yuan Wang 0001, Yimao Cai, Ru Huang 0001 |
Sci. China Inf. Sci. | 9 |
| 2005 | Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates
Cuimei Wang, Guoxin Hu, Junxue Ran, Cebao Fang, Yiping Zeng, Jinmin Li, He Qian |
Sci. China Ser. F Inf. Sci. | 2 |