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Arne Behrends

dblp:36/8516 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 2010
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor devices
heterostructure devices		 0.112010
ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology · Proc. IEEE 2010
Integrated circuit design › optoelectronic devices
light-emitting diodes		 0.112010
ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology · Proc. IEEE 2010
Integrated circuit design
optoelectronic devices		 0.112010
ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology · Proc. IEEE 2010

Methods — techniques the papers use, named apart from their topics

p-type doping · 0.1inverted LED concept · 0.1
YearPublicationVenuePosition
2010 ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology
abstract
Reliable and reproducible p-type doping is the main challenge for fabricating highly efficient ZnO-based light-emitting diodes. During the last few years, the lack of reliable p-type conductivity in ZnO has initiated research concerning the combination of ZnO and other semiconductors, which can then be doped p-type. One of these concepts is the combination of ZnO with GaN heterostructures aiming at the fabrication of hybrid LEDs. We discuss the problems as well as potential benefits from a combination of ZnO and GaN hybrid heterostructures in a single device. We also present our recent results on ZnO-GaN hybrid LEDs using an inverted LED concept. The hybrid LEDs have an external quantum efficiency of more than 35%.
Andrey Bakin, Arne Behrends, Andreas Waag, Hans-Jürgen Lugauer, Ansgar Laubsch, Klaus Streubel
 Proc. IEEE2