Demo Data from SIGIR 2026 / reviewers in the wild / expert
Mao Jia
dblp:376/2982
· DBLP profile ↗
3ranked-venue papers
1as first author
3since 2021 · last 2025
0000-0002-3066-9755ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 1 first-author · 2 since 2021Artificial intelligence and machine learning · 1 · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 91% Hardware reliability and fault tolerance · 9% |
Topics — the 2 heaviest of 5, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
power semiconductor devices |
1.6 | 2 | 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT · Sci. China Inf. Sci. 2025 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes |
0.8 | 1 | 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
gate leakage analysis · 0.9electrical characterization · 0.9ion implantation · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 1 |
| 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 11 |
| 2024 | Image splicing region localization with adaptive multi-feature filtration
Jianpeng Hou, Ruidong Han, Mao Jia, Dong Liu 0043, Qinhua Yu, Shanmin Pang |
Expert Syst. Appl. | 4 |