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Miguel Urteaga

dblp:45/11130 · also Miguel E. Urteaga · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 2017
—ORCID · unresolved

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 2 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor devices
heterojunction bipolar transistor		 0.312017
InP HBT Technologies for THz Integrated Circuits · Proc. IEEE 2017
Integrated circuit design
monolithic IC		 0.112017
InP HBT Technologies for THz Integrated Circuits · Proc. IEEE 2017

Methods — techniques the papers use, named apart from their topics

transistor bandwidth extension · 0.3thin-film wiring · 0.3
YearPublicationVenuePosition
2017 InP HBT Technologies for THz Integrated Circuits
abstract
Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation ( f max) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.
Miguel Urteaga, Zach Griffith, Munkyo Seo, Jonathan Hacker, Mark J. W. Rodwell
 Proc. IEEE1