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Wenliang Liu 0003

dblp:45/8500-3 · also Wen-Liang Liu 0003 · DBLP profile ↗
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2ranked-venue papers
1as first author
2since 2021 · last 2025
0000-0002-2084-5217ORCID · verified

Domains — the database's venue-derived domains; a paper can count in several

Computer networks · 1 · 1 first-author · 1 since 2021Applied, interdisciplinary, general and emerging computing · 1 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 1 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT
0.812024
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure · Sci. China Inf. Sci. 2024

Methods — techniques the papers use, named apart from their topics

electrostatic shielding · 0.8
YearPublicationVenuePosition
2025 Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications
abstract
This article introduces a novel power amplifier integrated active antenna (PAIAA) with increased efficiency that integrates a Class-$F {^{-}1 }$Gallium Nitride (GaN) power amplifier (PA) and a stub-loaded wide slot antenna (SLSA) for wireless power transmission (WPT) applications. Unlike conventional PA integrated active antennas in which antennas and PAs are separately matched to 50 ohms, the input impedance of the SLSA is meticulously engineered to match the fundamental impedance and modulate harmonic impedances of the GaN transistor by optimizing the dimensions of the SLSA's stubs. This approach eliminates the output matching network (OMN), the PA's harmonic modulation network (HMN), and the antenna's input matching network (IMN), which typically incur unavoidable insertion loss but are essential for conventional Class-$F {^{-}1 }$PAs and antennas. Consequently, it enhances the power-added efficiency (PAE) within the 3.3–3.8-GHz range and reduces the overall size of the PA integrated active antenna. Thanks to the extended design freedom offered by SLSA, precise impedance values can be achieved across a broader frequency range, resulting in increased efficiency across a larger spectrum. In addition, an innovative insertion loss measurement method for impedance matching network with a non-50-$\Omega $port is introduced to accurately measure the Class-$F {^{-}1 }$PA's PAE incorporated in the proposed PAIAA. The measured PAIAA demonstrates a peak PAE of 70.1%, surpassing the performances of reported integrated active antennas. The measured effective isotropic radiated power (EIRP) of the proposed PAIAA is 44.52 dBm. A conventional PA-antenna design, where an antenna and a Class-$F {^{-}1 }$PA are separately matched to$50~\Omega $and simply cascaded, is also designed and measured as a contrast, whose measured peak PAE and EIRP of the conventional design are only 61.5% and 43.9 dBm, respectively. The proposed PAIAA, with its increased efficiency, can be practically utilized for WPT applications in the Internet of Things (IoT), where efficiency performance is critical.
Wenliang Liu 0003, Jing-Ya Deng, Chupeng Yi, Ziyue Zhao 0003, Ting Feng 0002, Xin Liu 0063, Xiaohua Ma 0001, Yue Hao 0001
IEEE Internet Things J.1
2024 Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.9