The number of cores present on-chip is increasing rapidly. The on-chip network that connects these cores needs to scale efficiently. The topology of on-chip networks is an important design choice that affects how these networks scale. Most current on-chip networks use 2-D mesh topologies which do not scale due to their large diameter and energy inefficiency. To tackle the scalability problem of 2-D meshes, various physical express topologies and virtual express topologies have been proposed. In addition, recently proposed link designs like capacitively driven low-swing interconnects can help lower link power and latency, and can favor these bypass designs. In this work, we compare these two kinds of express topologies under realistic system constraints using synthetic network traffic. We observe that both express topologies help reduce low-load latencies. Virtual topologies help improve throughput whereas the physical express topologies give better performance-per-watt.

The interconnect bottleneck presents a compelling reason to explore novel interconnect architectures. In this work, we have quantified and compared the performance of two promising interconnects: carbon nanotube (CNT) and optical interconnects with the scaled Cu/low-k on-chip and off-chip interconnects for future high-performance ICs.

The purpose of this work is two fold. First, to quantify and establish future trends for the dynamic power dissipation in global wires of high performance integrated circuits. Second, to develop a novel and efficient delay-power tradeoff formulation for minimizing power due to repeaters, which can otherwise constitute 50% of total global wire power dissipation. Using the closed form solutions from this formulation, power savings of 50% on repeaters are shown with minimal delay penalties of about 5% at the 50 nm technology node. These closed-form, analytical solutions provide a fast and powerful tool for designers to minimize power.

Presents both compact analytical models and fast SPICE based 3-D electro-thermal simulation methodology to characterize thermal effects due to Joule heating in high performance Cu/low-k interconnects under steady-state and transient stress conditions. The results agree with experimental data and those using finite element (FE) thermal simulations (ANSYS). The effect of vias, as additional heat sinking paths to alleviate the temperature rise in the metal wires, is included in the analysis to provide more accurate and realistic thermal diagnosis. It shows that the effectiveness of vias in reducing the temperature rise in interconnects is highly dependent on the via separation and the dielectric materials used. The analytical model is then applied to estimate the temperature distribution in multi-level interconnects. We discuss the possibility that, under the impact of thermal effects, the performance improvement expected from the use of low-k dielectric materials may be degraded. Furthermore, thermal coupling between wires is evaluated and found to be significant. Finally, the impact of metal wire aspect ratio on interconnect thermal characteristics is discussed.

Performance of deep-submicrometer very large scale integrated (VLSI) circuits is being increasingly dominated by the interconnects due to decreasing wire pitch and increasing die size. Additionally, heterogeneous integration of different technologies in one single chip is becoming increasingly desirable, for which planar (two-dimensional) ICs may not be suitable. This paper analyzes the limitations of the existing interconnect technologies and design methodologies and presents a novel three-dimensional (3-D) chip design strategy that exploits the vertical dimension to alleviate the interconnect related problems and to facilitate heterogeneous integration of technologies to realize a system-on-a-chip (SoC) design. A comprehensive analytical treatment of these 3-D ICs has been presented and it has been shown that by simply dividing a planar chip into separate blocks, each occurring a separate physical level interconnected by short and vertical interlayer interconnects (VILICs), significant improvement in performance and reduction in wire-limited chip area can be achieved, without the aid of any other circuit or design innovations. A scheme to optimize the interconnect distribution among different interconnect tiers is presented and the effect of transferring the repeaters to upper Si layers has been quantified in this analysis for a two-layer 3-D chip. Furthermore, one of the major concerns in 3-D ICs arising due to power dissipation problems has been analyzed and an analytical model has been presented to estimate the temperatures of the different active layers. It is demonstrated that advancement in heat sinking technology will be necessary in order to extract maximum performance from these chips. Implications of 3-D device architecture on several design issues have also been discussed with special attention to SoC design strategies. Finally some of the promising technologies for manufacturing 3-D ICs have been outlined.

Twenty-first century opportunities for GSI will be governed in part by a hierarchy of physical limits on interconnects whose levels are codified as fundamental, material, device, circuit, and system. Fundamental limits are derived from the basic axioms of electromagnetic, communication, and thermodynamic theories, which immutably restrict interconnect performance, energy dissipation, and noise reduction. At the material level, the conductor resistivity increases substantially in sub-50-nm technology due to scattering mechanisms that are controlled by quantum mechanical phenomena and structural/morphological effects. At the device and circuit level, interconnect scaling significantly increases interconnect crosstalk and latency. Reverse scaling of global interconnects causes inductance to influence on-chip interconnect transients such that even with ideal return paths, mutual inductance increases crosstalk by up to 60% over that predicted by conventional RC models. At the system level, the number of metal levels explodes for highly connected 2-D logic megacells that double in size every two years such that by 2014 the number is significantly larger than ITRS projections. This result emphasizes that changes in design, technology, and architecture are needed to cope with the onslaught of wiring demands. One potential solution is 3-D integration of transistors, which is expected to significantly improve interconnect performance. Increasing the number of active layers, including the use of separate layers for repeaters, and optimizing the wiring network, yields an improvement in interconnect performance of up to 145% at the 50-nm node.

Continuous scaling of VLSI circuits is reducing gate delays but rapidly increasing interconnect delays. Semiconductor Industry Association (SIA) roadmap predicts that, beyond the 130 nm technology node, performance improvement of advanced VLSI is likely to begin to saturate unless a paradigm shift from present IC architecture is introduced. This paper presents a comprehensive analytical treatment of ICs with multiple Si layers (3-D ICs). It is shown that significant improvement in performance (more than 145%) and reduction in wire-limited chip area can be achieved with 3-D ICs with vertical inter-layer interconnects (VILICs). This analysis is based on dividing a chip into separate blocks, each occupying a separate physical level. A scheme to optimize interconnect distribution among different interconnect tiers is presented and the effect of transferring the repeaters to upper Si layers has been quantified in this analysis. Furthermore, thermal analysis of ICs with two Si layers is presented. It is demonstrated that using a thermally responsible design and/or a high-performance heat sinking technology, die temperatures for ICs with two Si layers can be reduced well below present die temperatures. Finally, implications of 3-D architecture on several circuit designs are also discussed.

In this work we address the problem of dealing with data inconsistencies while integrating data sets derived from multiple autonomous relational databases. The fundamental assumption in the classical relational model is that data is consistent and hence no support is provided for dealing with inconsistent data. Due to this limitation of the classical relational model, the semantics for detecting, representing, and manipulating inconsistent data have to be explicitly encoded in the applications by the application developer. In this paper, we propose the flexible relational model, which extends the classical relational model by providing support for inconsistent data. We present a flexible relation algebra, which provides semantics for database operations in the presence of potentially inconsistent data. Finally, we discuss issues raised for query optimization when the data may be inconsistent.>