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Louis D. Lanzerotti

dblp:65/536 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 2005
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › radio-frequency circuit design
CMOS RFIC		 0.112005
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS · Proc. IEEE 2005
Integrated circuit design
radio-frequency circuit design		 0.112005
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS · Proc. IEEE 2005
Integrated circuit design › semiconductor technology › semiconductor process technology
SiGe BiCMOS		 0.112005
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS · Proc. IEEE 2005
Integrated circuit design
analog and mixed-signal circuits		 0.012005
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS · Proc. IEEE 2005
YearPublicationVenuePosition
2005 Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS
abstract
We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, SiGe BiCMOS WL ("cost performance") tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.
Alvin J. Joseph, David L. Harame, Basanth Jagannathan, Douglas D. Coolbaugh, John Magerlein, Louis D. Lanzerotti, Natalie B. Feilchenfeld, Stephen A. St. Onge, James S. Dunn, Edward J. Nowak
 Proc. IEEE7