Demo Data from SIGIR 2026 / reviewers in the wild / expert
Hao Lu 0012
dblp:72/5422-12
· DBLP profile ↗
6ranked-venue papers
1as first author
6since 2021 · last 2026
0000-0002-3189-7864ORCID · conflict
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 6 · 1 first-author · 6 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
6 papers |
Integrated circuit design · 98% Hardware reliability and fault tolerance · 2% | |
| Computer networks
1 paper |
Physical-layer communications · 100% |
Topics — the 10 heaviest of 13, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
GaN HEMT |
2.0 | 2 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026 |
Integrated circuit design
power semiconductor devices |
1.6 | 2 | 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT · Sci. China Inf. Sci. 2025 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
1.3 | 2 | 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026 |
Integrated circuit design
analog and mixed-signal circuits |
1.0 | 1 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor devices
compound semiconductor devices |
1.0 | 1 | 2026 | High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026 |
Integrated circuit design › power semiconductor devices
high-power device |
1.0 | 1 | 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026 |
Integrated circuit design › analog and mixed-signal circuits
RF power amplifier |
1.0 | 1 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT |
0.8 | 1 | 2024 | Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes |
0.8 | 1 | 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Physical-layer communications › receiver design
RF front-end |
0.3 | 1 | 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026 |
Methods — techniques the papers use, named apart from their topics
recessed gate oxidation · 2.0polycrystalline-aln cap · 1.0graded-AlGaN/graded-InGaN/GaN HEMTs · 1.0gate leakage analysis · 0.9electrical characterization · 0.9ion implantation · 0.8electrostatic shielding · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Hao Lu 0012, Ling Yang 0003, Bin Hou, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 2 |
| 2026 | High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Hao Lu 0012, Xiaohua Ma 0001, Longge Deng, Ling Yang 0003, Bin Hou, Yue Hao 0001 |
Sci. China Inf. Sci. | 1 |
| 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Ling Yang 0003, Chunzhou Shi, Bin Hou, Hao Lu 0012, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 8 |
| 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 6 |
| 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 6 |
| 2024 | Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 4 |