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Xiaohua Ma 0001

dblp:73/3297-1 · also Xiao-Hua Ma 0001 · DBLP profile ↗
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22ranked-venue papers
0as first author
21since 2021 · last 2026
—ORCID · conflict

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 18 · 17 since 2021Systems, architecture and hardware · 2 · 2 since 2021Computer networks · 2 · 2 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
19 papers
Integrated circuit design · 83% Hardware reliability and fault tolerance · 6% Hardware accelerators and domain-specific architectures · 6%
Computer networks
3 papers
Physical-layer communications · 79% Cellular and mobile networks · 21%
Computer graphics and multimedia
1 paper
Image and video coding · 100%

Topics — the 30 heaviest of 40, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
analog and mixed-signal circuits
4.252026
Physical structure-based small signal modeling for GaN Fin-HEMTs · Sci. China Inf. Sci. 2026
High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026
High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure · Sci. China Inf. Sci. 2025
Integrated circuit design
power semiconductor devices
2.432025
Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT · Sci. China Inf. Sci. 2025
Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate · Sci. China Inf. Sci. 2024
High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024
Integrated circuit design › semiconductor devices
GaN HEMT
2.022026
High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026
High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026
Integrated circuit design › power semiconductor devices
high-power device
2.022026
High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026
A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch · Sci. China Inf. Sci. 2026
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor
1.932026
High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method · Sci. China Inf. Sci. 2022
High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026
Integrated circuit design › semiconductor devices
compound semiconductor devices
1.012026
High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap · Sci. China Inf. Sci. 2026
Integrated circuit design › analog and mixed-signal circuits
device modeling
1.012026
Physical structure-based small signal modeling for GaN Fin-HEMTs · Sci. China Inf. Sci. 2026
Integrated circuit design › analog and mixed-signal circuits
RF power amplifier
1.012026
High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026
Integrated circuit design › analog and mixed-signal circuits › device modeling
small-signal model
1.012026
Physical structure-based small signal modeling for GaN Fin-HEMTs · Sci. China Inf. Sci. 2026
Image and video coding
transform coding
0.912025
A High-Precision and Low-Cost Approximate Transform Accelerator for Video Coding · DAC 2025
Image and video coding
video compression
0.912025
A High-Precision and Low-Cost Approximate Transform Accelerator for Video Coding · DAC 2025
Physical-layer communications
digital predistortion
0.912025
Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications · IEEE Trans. Commun. 2025
Physical-layer communications › beamforming
hybrid beamforming
0.912025
Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications · IEEE Trans. Commun. 2025
Cellular and mobile networks
millimeter-wave communication
0.912025
Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications · IEEE Trans. Commun. 2025
Physical-layer communications › receiver design › RF impairment compensation
power amplifier linearization
0.912025
Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications · IEEE Trans. Commun. 2025
Integrated circuit design
memory circuit design
0.912025
Physics based circuit compatible model for hybrid antiferroelectric random access memory · Sci. China Inf. Sci. 2025
Hardware accelerators and domain-specific architectures › machine learning accelerator
transform accelerators
0.912025
A High-Precision and Low-Cost Approximate Transform Accelerator for Video Coding · DAC 2025
Hardware accelerators and domain-specific architectures
video coding accelerator
0.912025
A High-Precision and Low-Cost Approximate Transform Accelerator for Video Coding · DAC 2025
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT
0.812024
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure · Sci. China Inf. Sci. 2024
Hardware reliability and fault tolerance
device reliability
0.812024
Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias · Sci. China Inf. Sci. 2024
Integrated circuit design
power electronics
0.812024
Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate · Sci. China Inf. Sci. 2024
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes
0.812024
High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024
Hardware reliability and fault tolerance › aging
transistor aging
0.712023
Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light · Sci. China Inf. Sci. 2023
Emerging computing paradigms
optical computing
0.512021
Recent progress of integrated circuits and optoelectronic chips · Sci. China Inf. Sci. 2021
Integrated circuit design
optoelectronic integrated circuits
0.512021
Recent progress of integrated circuits and optoelectronic chips · Sci. China Inf. Sci. 2021
Integrated circuit design
photonic integrated circuits
0.512021
Recent progress of integrated circuits and optoelectronic chips · Sci. China Inf. Sci. 2021
Physical-layer communications › receiver design
RF front-end
0.312026
High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process · Sci. China Inf. Sci. 2026
Integrated circuit design
digital circuit design
0.312026
Physical structure-based small signal modeling for GaN Fin-HEMTs · Sci. China Inf. Sci. 2026
Integrated circuit design › digital circuit design
gan transistor
0.312026
Physical structure-based small signal modeling for GaN Fin-HEMTs · Sci. China Inf. Sci. 2026
Physical-layer communications › MIMO
massive MIMO
0.312025
Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications · IEEE Trans. Commun. 2025

Methods — techniques the papers use, named apart from their topics

recessed gate oxidation · 2.0matrix decomposition · 1.7least-squares optimization · 1.7polycrystalline-aln cap · 1.0physical structure-based modeling · 1.0photoconductive switching · 1.0graded-AlGaN/graded-InGaN/GaN HEMTs · 1.0top-MIS-gate · 0.9three-dimensional-gated modulation · 0.9electrical characterization · 0.9digital pre-distortion · 0.9analytical multi-input behavioral model · 0.9
YearPublicationVenuePosition
2026 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Hao Lu 0012, Ling Yang 0003, Bin Hou, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.7
2026 High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Hao Lu 0012, Xiaohua Ma 0001, Longge Deng, Ling Yang 0003, Bin Hou, Yue Hao 0001
Sci. China Inf. Sci.2
2026 A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch
Xiaoli Lu, Xiangjin Chen, Jingliang Liu, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.8
2026 High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Ling Yang 0003, Chunzhou Shi, Bin Hou, Hao Lu 0012, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.11
2026 Physical structure-based small signal modeling for GaN Fin-HEMTs
Ziyue Zhao 0003, Chupeng Yi, Ting Feng 0002, Xin Liu 0063, Guanghai Yao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.9
2025 A High-Precision and Low-Cost Approximate Transform Accelerator for Video Coding
abstract
The introduction of multiple transform types in the Versatile Video Coding (VVC) standard has yielded notable encoding gains but also imposed considerable computational burdens. Existing transform circuits of different types are typically implemented separately due to their independence, leading to substantial hardware overhead. To address this, we explore the relationship between Discrete Cosine Transform Type-2 (DCT2) and Discrete Sine Transform Type-7 (DST7) matrices and reveal a prominent diagonal aggregation phenomenon in their transfer matrix. Based on this insight, the least-squares method is applied to optimize the transfer matrix sparsity, achieving a high-precision, low-cost approximate conversion from DCT2 to DST7. Furthermore, we optimize DCT2 computation by proposing an elaborate matrix decomposition approach that allows a lightweight shift-adder unit to efficiently generate all required product terms across varying sizes. Leveraging these algorithmic optimizations, we implement a highly reusable and area-efficient approximate transform accelerator that supports sizes from 4 to 32 points and accommodates three types in VVC. Experimental results demonstrate that the proposed accelerator achieves over 44% reduction in circuit resource consumption with negligible BD-BR performance loss of just $\mathbf{0. 5 3 \%}$, maintaining processing capabilities up to $8 K \text{@} 57 \mathrm{fps}$.
Zhijian Hao, Chenlong He, Qi Zheng 0004, Shushi Chen, Jinchang Xu, Yue Hao 0001, Xiaohua Ma 0001
DAC9
2025 High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
Can Gong, Minhan Mi, Yuwei Zhou, Hanzhen Li, Xinyi Wen, Sirui An, Xiang Du, Qing Zhu 0013, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.13
2025 Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.12
2025 Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG
Lingjie Qin, Jiejie Zhu, Huantao Duan, Huimei Ma, Simei Huang, Jin Rao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.10
2025 Physics based circuit compatible model for hybrid antiferroelectric random access memory
Qiuxia Wu, Wenwu Xiao, Wenxuan Ma 0008, Chunfu Zhang, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.8
2025 Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications
abstract
This article introduces a novel power amplifier integrated active antenna (PAIAA) with increased efficiency that integrates a Class-$F {^{-}1 }$Gallium Nitride (GaN) power amplifier (PA) and a stub-loaded wide slot antenna (SLSA) for wireless power transmission (WPT) applications. Unlike conventional PA integrated active antennas in which antennas and PAs are separately matched to 50 ohms, the input impedance of the SLSA is meticulously engineered to match the fundamental impedance and modulate harmonic impedances of the GaN transistor by optimizing the dimensions of the SLSA's stubs. This approach eliminates the output matching network (OMN), the PA's harmonic modulation network (HMN), and the antenna's input matching network (IMN), which typically incur unavoidable insertion loss but are essential for conventional Class-$F {^{-}1 }$PAs and antennas. Consequently, it enhances the power-added efficiency (PAE) within the 3.3–3.8-GHz range and reduces the overall size of the PA integrated active antenna. Thanks to the extended design freedom offered by SLSA, precise impedance values can be achieved across a broader frequency range, resulting in increased efficiency across a larger spectrum. In addition, an innovative insertion loss measurement method for impedance matching network with a non-50-$\Omega $port is introduced to accurately measure the Class-$F {^{-}1 }$PA's PAE incorporated in the proposed PAIAA. The measured PAIAA demonstrates a peak PAE of 70.1%, surpassing the performances of reported integrated active antennas. The measured effective isotropic radiated power (EIRP) of the proposed PAIAA is 44.52 dBm. A conventional PA-antenna design, where an antenna and a Class-$F {^{-}1 }$PA are separately matched to$50~\Omega $and simply cascaded, is also designed and measured as a contrast, whose measured peak PAE and EIRP of the conventional design are only 61.5% and 43.9 dBm, respectively. The proposed PAIAA, with its increased efficiency, can be practically utilized for WPT applications in the Internet of Things (IoT), where efficiency performance is critical.
Wenliang Liu 0003, Jing-Ya Deng, Chupeng Yi, Ziyue Zhao 0003, Ting Feng 0002, Xin Liu 0063, Xiaohua Ma 0001, Yue Hao 0001
IEEE Internet Things J.8
2025 A Novel Transform Accelerator With Fast Kernel Selection and Efficient Transform Circuit
abstract
The introduction of multiple transform types into the Versatile Video Coding (VVC) standard has yielded notable encoding gains but also resulted in substantial computational burdens, posing two critical challenges for hardware implementation: fast kernel selection and efficient transform computation design. Existing studies typically address these challenges in isolation, lacking a holistic solution for VVC transform coding. In this paper, we presents a groundbreaking transform accelerator that unifies transform kernel selection and multiple transform circuit within a single framework. In terms of algorithms, driven by mechanistic analysis, we propose a decision tree-based kernel selection algorithm that ensures both high decision accuracy and computational efficiency. Additionally, we design a transfer matrix-based approximation algorithm for Discrete Sine Transform Type-7 and a matrix decomposition-based improved computation for Discrete Cosine Transform Type-2, significantly reducing the computational complexity. On the hardware front, we implement a high-precision and area-efficient transform accelerator, which integrates highly pipelined kernel selection and transform computation architectures. With multiple reuse and parallelism strategies, the accelerator demonstrates substantial resource efficiency advantages. Experimental results reveal that the proposed accelerator achieves a circuit resource reduction of over 44% with a slight performance degradation, while maintaining processing capabilities up to 8K@57 fps. To the best of our knowledge, this is the first comprehensive hardware solution for VVC transform coding that jointly addresses the challenges of kernel selection and transform circuit design.
Zhijian Hao, Chenlong He, Qi Zheng 0004, Jinchang Xu, Peijun Ma, Xiaohua Ma 0001, Yue Hao 0001
IEEE Trans. Circuits Syst. I Regul. Pap.7
2025 Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications
abstract
In recent years, fully-connected hybrid beamforming (FC-HBF) architecture has aroused widespread interest for millimeter wave (mmWave) massive multi-input multi-output (MIMO) communication systems. However, the FC-HBF structure suffers from significant linearity deterioration, limiting its applications in actual mmWave transmitters. To resolve this issue, an effective digital predistortion (DPD) method utilizing analytical multi-input behavioral models is proposed in this paper for linearizing the FC-HBF system. Based on the nonlinearity analysis and behavioral modeling of the array response, three analytical multi-input models are derived by embedding the priori beamforming information in the predistorter. The complexity of the proposed analytical models is significantly reduced compared to the state-of-the-art. Numerical simulations and experimental measurement are carried out on a$4\times 64$mmWave FC-HBF array and$2\times 16$quasi-test platform respectively to validate the performance of the proposed DPDs against the state-of-the-art DPDs, which show significant linearization abilities to compensate for the nonlinear distortions of beam signals. The proof-of-the-concept validations in this paper indicate that the proposed scheme is fully capable of linearizing an mmWave FC-HBF array.
Xin Liu 0063, Huanhuan Jia, Ziyue Zhao 0003, Chupeng Yi, Ting Feng 0002, Xiaohua Ma 0001, Wenhua Chen 0002, Zhenghe Feng, Fadhel M. Ghannouchi
IEEE Trans. Commun.7
2024 A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
Sirui An, Minhan Mi, Qing Zhu 0013, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.11
2024 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.15
2024 Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate
Wen Hong, Xuefeng Zheng, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.5
2024 Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.11
2024 Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias
Qing Zhu 0013, Zhenni Wang, Yuxiang Wei 0006, Ling Yang 0003, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma 0001
Sci. China Inf. Sci.9
2023 Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Qing Zhu 0013, Jiejie Zhu, Minhan Mi, Yuwei Zhou, Ziyue Zhao 0003, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.8
2022 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Xiaohua Ma 0001, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Qing Zhu 0013, Ling Yang 0003, Yue Hao 0001
Sci. China Inf. Sci.2
2021 Recent progress of integrated circuits and optoelectronic chips
Yue Hao 0001, Genquan Han, Jincheng Zhang 0001, Xiaohua Ma 0001, Zhangming Zhu, Yanan Han, Ling Yang 0003, Jiangyi Shi, Wei Zhang 0343, Biao Pan, Yangqi Huang, Qi Liu 0010, Yimao Cai, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao 0006, Guoping Guo, Yonghua Chen, Xiangfei Chen, Chunlai Xue, Lixia Zhao, Xihua Zou, Lianshan Yan
Sci. China Inf. Sci.5
2014 Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp
Yuan Wang 0001, Xing Zhang 0002, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.4