Multi-Variant Execution (MVX) is an effective way to detect memory corruption vulnerabilities, intrusions, or live software updates. A traditional MVX system concurrently runs multiple copies of functionally identical, layout-different program variants. Therefore, a typical memory corruption attack that forges pointers can succeed on at most one variant, leading the other variant(s) to crash. The replicated execution adds software security and reliability but also brings multiple times of CPU and memory usage.

Securing the intellectual property (IP) from counterfeiting is an important goal toward trustworthy computing. Camouflaging of logic gates is a well-known technique to prevent an adversary from de-layering the chip and stealing IP. In this paper, we propose threshold voltage modulation to realize 2-input static camouflaged logic that can hide six functionalities. We extend the concept of threshold-voltage defined logic to propose multi-input camouflaged gates capable of hiding six 3-input Boolean functions (NAND, NOR, AOI, OAI, XOR, and XNOR). We also propose interconnect camouflaging technique which hides the original connectivity of nets using a novel threshold-voltage defined pass transistor mux. Since threshold voltages are asserted during fabrication and are difficult to identify during optical reverse engineering (RE)-based techniques, the adversary will be forced to launch a brute-force search. We present a thorough analysis of RE effort and overheads associated with the proposed camouflaging techniques. The proposed methodology is demonstrated using fabricated test-chip in 65 nm technology.

Due to the ever-increasing threat of Reverse Engineering (RE) of Intellectual Property (IP) for malicious gains, camouflaging of logic gates is becoming very important. In this paper, we present experimental demonstration of transistor threshold voltage-defined switch [2] based camouflaged logic gates that can hide six logic functionalities i.e. NAND, AND, NOR, OR, XOR and XNOR. The proposed gates can be used to design the IP, forcing an adversary to perform brute-force guess-and-verify of the underlying functionality---increasing the RE effort. We propose two flavors of camouflaging, one employing only a pass transistor (NMOS-switch) and the other utilizing a full pass transistor (CMOS-switch). The camouflaged gates are used to design Ring-Oscillators (RO) in ST 65nm technology, one for each functionality, on which we have performed temperature, voltage, and process-variation analysis. We observe that CMOS-switch based camouflaged gate offers a higher performance (~1.5-8X better) than NMOS-switch based gate at an added area cost of only 5%. The proposed gates show functionality till 0.65V. We are also able to reclaim lost performance by dynamically changing the switch gate voltage and show that robust operation can be achieved at lower voltage and under temperature fluctuation.

Non-volatile memories (NVMs) such as Spin-Transfer Torque RAM (STTRAM) have drawn significant attention due to complete elimination of bitcell leakage. In addition to the plethora of benefits such as density, non-volatility, low-power and high speed, majority of Non-Volatile Memories (NVMs) are also compatible with CMOS technology enabling easy integration. Although promising, NVM brings new security challenges that were absent in their conventional volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). The root cause is persistent data that may allow the adversary to retrieve sensitive information like password or cryptographic keys. This is primarily due to the fundamental dependency of these memory technologies on environmental parameters such as magnetic fields and temperature which can be exploited by the adversary to tamper with the stored data. This paper investigates the data security and privacy challenges in NVMs by exploring the security specific properties and novel security primitives realized using spintronic building blocks. A thorough analysis is done on the vulnerabilities, data security and privacy issues, threats and possible countermeasures to enable safe computing environment using spintronics.

In this paper, we analyze the fundamental vulnerabilities of Spin-Torque-Transfer RAM on magnetic field and temperature that can be exploited by adversaries with an intent to trigger soft performance failures. We present novel attack vectors and their impact on memory performance (i.e., read, write and retention). We propose a novel low-overhead clock frequency-adaptation technique to mitigate the attack. Our analysis indicate slowing the clock frequency by 85% restores 170 mV of sense margin under 300 Oe DC magnetic field. In addition, 66% operating clock slowdown allows STTRAM to tolerate over 300 Oe AC magnetic field.

We propose spintronic physically unclonable functions (PUFs) to exploit security-specific properties of domain wall memory (DWM) for security, trust, and authentication. We note that the nonlinear dynamics of domain walls (DWs) in the physical magnetic system is an untapped source of entropy that can be leveraged for hardware security. The spatial and temporal randomness in the physical system is employed in conjunction with microscopic and macroscopic properties such as stochastic DW motion, stochastic pinning/depinning, and serial access to realize novel relay-PUF and memory-PUF designs. The proposed PUFs show promising results (∼50% interdie Hamming distance (HD) and 10% to 20% intradie HD) in terms of randomness, stability, and resistance to attacks. We have investigated noninvasive attacks, such as machine learning and magnetic field attack, and have assessed the PUFs resilience.

Spin-Transfer Torque Random Access Memory (STTRAM) is a possible candidate for universal memory due to its high-speed, low-power, non-volatility, and low cost. Although attractive, STTRAM is susceptible to contactless tampering through malicious exposure to magnetic field with the intention to steal or modify the bitcell content. In this paper, for the first time to our knowledge, we analyze the impact of magnetic attacks on STTRAM using micro-magnetic simulations. Next, we propose a novel array-based sensor to detect the polarity and magnitude of such attacks and then propose two design techniques to mitigate the attack, namely, array sleep with encoding and variable strength Error Correction Code (ECC). Simulation results indicate that the proposed sensor can reliably detect an attack and provide sufficient compensation window (few ns to ~100us) to enable proactive protection measures. Finally, we shows that variable-strength ECC can adapt correction capability to tolerate failures with various strength of an attack.