In a continuous superconductive film memory, elements are obtained through discrete regions of circulation of persistent currents near the intersection of x-y conductors deposited on the film. Analysis and confirming experiments show that these regions are stable. The elimination of edges of discrete film dots removes the main cause of variation of critical currents. Reproducibilities better than one quarter per cent were obtained. Simplicity of construction permits high bit densities. Memory planes of one hundred cells were made. Advisable speed of operation depends mainly on addressing and sensing circuits. Write-in in 3 nsec was obtained in single elements with only 60 milliamperes drive.