Compute-in-memory (CiM) for edge AI inference operates under strict memory and energy constraints. While unstructured pruning reduces model size and computation, efficiently deploying the sparse weights on CiM’s dense, regular arrays remains challenging. Existing studies either incur high indexing overhead by storing per-element indexing metadata, or achieve limited compression by relying on scarce structural patterns within unstructured weights. The column packing method, which avoids the high overhead of per-element indexing and offers rich compression potential, shows promise to reconcile unstructured sparsity with CiM’s regular compute pattern, but its direct application to CiM is hindered by heuristic grouping algorithms that either yield suboptimal compression or sacrifice model accuracy.To bridge this gap and unlock the potential of column packing for CiM, this study presents EGO, an algorithm-hardware co-designed framework. EGO overcomes the inefficiency of heuristic grouping by introducing a combinatorially optimized grouping algorithm, which formulates column packing as minimum-cost graph matching. A digital CiM architecture is co-designed with the EGO column grouping formulation, which features a custom Sparsity Processing Unit (SPU) to enable efficient activation routing while preserving CiM’s dense and regular dataflow. Circuit-level simulations show that EGO achieves 1.4–3.7x average improvement in energy efficiency and 1.2–1.8x average improvement in area efficiency compared to previous state-of-the-art methods.

Compute-in-Memory (CiM) has emerged as a promising paradigm to overcome the memory bottleneck of von Neumann architectures in data-intensive applications. While SRAM-based CiM benefits from mature fabrication support and high design flexibility, it suffers from significant access energy due to limited memory density. Recent advances in ROM-based CiM provide a high-density, energy-efficient alternative for deploying entire deep neural network (DNN) models on-chip, often assisted by small SRAM CiM modules to enhance task-level flexibility. However, existing ROM CiM architectures still face critical challenges in further scaling memory density and achieving finer-grained flexibility improvement.This paper presents FSDB, a digital hybrid ROM/SRAM CiM architecture to address these limitations. FSDB incorporates a folded-store compressed ROM CiM macro implemented using a sparsity-aware quantization methodology, achieving a record-high memory density of 40.2 Mb/mm2in a 28nm CMOS technology. Furthermore, the proposed dynamic-broaden computing architecture enables updates to parameters stored in ROM, providing kernel-level reconfigurability and cross-model scalability. Experimental results on an extended ResNet-50 demonstrate that FSDB improves inference accuracy by >5% on ImageNet compared to prior state-of-the-art (SOTA) flexible ROM CiM architectures.

Heterogeneous computing-in-memory (CIM) offers a promising solution for efficient neural network (NN) accelerations by leveraging the characteristics of different types of memories. However, the previous heterogeneous CIM either requires additional data transfer between different types of isolated memories or solely relies on in situ embedded single-level (SL) or three-level (TL) nonvolatile memories (NVMs), making it difficult to trade off between storage density and robustness benefits. In this article, a new heterogeneous CIM architecture (NVS-SPT) with enhanced storage density and inference robustness is proposed to enable full on-chip acceleration of practical-scale NNs while scalable to larger models. A splittable nonvolatile computing-in-static random access memory (SRAM) cell pairs (nvS2RAM-CIM) is proposed with hybrid in situ embedded SL and TL resistive random access memory (ReRAM) groups, allowing flexible configuration as split or linked state to enhance storage density and restore yield. A layerwise hybrid-coding search (LHCS) algorithm with bitwise and tritwise data-aware mapping (BTM) method is proposed to determine the optimal weight coding patterns with high array utilizations. In addition, a merged hybrid-coding block (MHCB) generation scheme is employed to enable high computing parallelism by merging the dense computing patterns. The proposed NVS-SPT demonstrates up to$4.2\times $higher storage density compared with previous heterogeneous CIM with pure SL-ReRAMs and achieves up to 44.7% enhanced NN accuracy, compared with previous unified ternary coding. Furthermore, the proposed NVS-SPT exhibits up to$1.72\times $and$1.44\times $enhanced energy efficiency with$3.10\times $and$1.42\times $higher computing density, compared with previous heterogeneous CIM based on pure SL- or TL-ReRAMs, respectively.

While large Transformer models have exhibited outstanding performance on multimodal tasks, the underlying massive parameters land up with memory-wall issues. To address this bottleneck, SRAM-based compute-in-memory (CiM) is a promising technique. However, frequent off-chip weight loading due to limited on-chip capacity could severely limit the systemlevel energy efficiency. Recently, a high-density CiM structure at 16.4Mb/mm2, YOLoC, has shown the potential of complete on-chip deployment of a large detection model using transistor-based read-only-memory (ROM). However, it is still challenging to deploy even larger Transformer models. With opportunities provided by LoRA for finetuning large pretrained models on ROM-CiM with very light SRAM-CiMs, this work achieves ultra-high density up to 165.6Mb/mm2 by eliminating the use of transistors for ROM-CiM with a proposed 3D-METRO and a 3D stacking array on the mature CMOS process. Unlike the usual belief that parasitics have negative impacts, this work observes that parasitics can be utilized for data storage. Furthermore, a local recovering unit (LRU) is proposed for addressing the interference due to the transistor-less structure. 3D-METRO achieves ultra-high density improvement over the previous YOLoC, which is hundreds of times higher than that of SRAM-CiM, enabling the opportunity for large language model (LLM) deployment on a single chip with 28x energy efficiency improvement.

Owing to mature fabrication support and high flexibility, static random-access memory (SRAM) has become a very promising candidate for compute-in-memory (CiM) in accelerating deep neural networks (DNNs). However, SRAM-based CiM has low memory density and thus very limited total on-chip capacity, resulting in frequent weights reloading and additional power consumption during end-to-end inference tasks. Analog ROM CiM increases memory density but suffers from low computing density caused by A/D converter (ADC) limitation. To address these challenges, for the first time, a fully digital compute-in-read-only-memory (DCiROM) design approach is proposed in this paper. DCiROM introduces a novel ROM-logic fusion CiM that successfully reduces CiM area by 51% while maintaining high memory density and computing performance. By reusing multiply-and-accumulation (MAC) resources, DCiROM further achieves flexibility with a minimal area cost. We have implemented a DCiROM chip loaded 3024Kb ResNet-56 parameters using 65nm CMOS technology. This macro achieves 10.2x-55.7x higher normalized FoM (memory density x computing density) than the state-of-the-art CiM works. It also reduces 2.9x-9.9x energy consumption per image inference than SRAM CiM works when considering off-chip access.

Long-context inference has become a central focus in recent self-regressive Transformer research. However, challenges still remain in performing decode stage due to the memory bandwidth bottleneck of attention mechanisms and the substantial memory overhead associated with KV cache. Although attention sparsity has been proposed as a potential solution, conventional sparsity methods that rely on heuristic algorithms often suffer from accuracy degradation when applied to ultra-long sequences. To break through the dilemma between accuracy-performance and bandwidth-capacity, this work proposes DIAS, a distancebased irregular attention sparsity approach with processing-inmemory (PIM) architecture. DIAS employs approximate topK attention (AKAttention) scores through graph-based search to improve inference efficiency while maintaining accuracy. Furthermore, a scalable tree-like PIM (TreePIM) architecture is introduced to achieve both memory capacity and bandwidth improvement by isolating enormous memory access for KV cache into the PIM units. Evaluations on various configurations of DIAS for Longbench with Llama3-405B models with 1 M sequence length show up to 75 times speedup compared with the state-of-the-art LLM accelerator, with accuracy drop of less than $1 \%$. Index Terms-AI and Machine Learning, Architecture & System Design

Compute-in-memory (CiM) has become a promising candidate for edge AI by reducing data movements through insitu operations. However, this emerging computational paradigm also poses the vulnerability of model leakage as the weights are stored in plaintext for computing. While prior works have explored lightweight encryption methods, CiM is usually considered a separate module instead of a system component, leaving the origin of keys unclear and unprotected. Physical unclonable functions (PUFs) offer a potential origin of keys, but a comprehensive framework for securing key generation and delivery remains lacking. Besides, the complementary ciphertext storage incurs substantial costs and degrades the performance. This work proposes PUFiM, a robust and efficient security solution for edge computing based on ferroelectric FETs (FeFETs). For the first time, a strong PUF is synergized with CiM to enable authentication, key generation, and encrypted computations within a unified array for comprehensive protection. To achieve this synergization, a high-density hybrid storage and computation approach combining PUF and weight bits via multi-level cell (MLC) FeFETs is proposed. Besides, two PUF enhancement techniques and a novel mapping scheme are developed to improve security and efficiency further. Results show that PUFiM withstands PUF modeling attacks with up to $\mathbf{1 0 M}$ samples. Moreover, PUFiM reduces the inference accuracy by $\gt 60 \%$ under 95% key leakage and achieves $\gt 9.7 \times$ compute density and $\gt 1.2 \times$ energy efficiency improvement compared with the state-of-the-art SRAM/NVM secure CiMs.

Compute-in-Memory (CiM) is a promising technique for energy-efficient deep neural network (DNN) inference to miti-gate the memory bottleneck. Unfortunately, conventional SRAM-based CiM has a low density and limited on-chip capacity, resulting in undesired weight reloading from off-chip DRAM. The emerging high-density ROM-based CiM architecture has recently revealed the opportunity of deploying large-scale DNNs on-chip, with optional assisting SRAM to ensure moderate flexibility. However, prior analog-domain ROM CiM still suffers from limited memory density improvement and low computing area efficiency due to stringent array structure and large A/D converter (ADC) overhead. This paper presents DSC-ROM, a fully digital sparsity-compressed compute-in-ROM architecture to address these challenges. DSC-ROM introduces a fully synthesizable macro-level design methodology that achieves a record-high memory density of 27.9 Mb/mm2in a 28nm CMOS technology. Experimental results show that the macro area efficiency of DSC-ROM improves by 5.6-6.6x compared with prior analog-based ROM CiM. Furthermore, a novel weight fine-tuning technique is proposed to ensure task transfer flexibility and reduce required assisting SRAM cells by 94.4%. Experimental results show that DSC-ROM designed for ResNet-18 pre-trained on ImageNet dataset achieves <0.5% accuracy loss in CIFAR-10 and FER2013, compared with the fully SRAM-based CiM.

Compound AI systems showcase impressive performance and versatility compared to single AI models by combining large language models (LLMs) with various smaller expert models. The major bottleneck of compound AI lies in frequent data movement due to the massive parameters and dynamic routing mechanisms. Compute-In-Memory (CiM) has demonstrated great potential to mitigate the memory wall. However, constrained by the rigid array structure, existing CiM accelerators struggle to meet more general and diverse model compression demands of compound AI, such as fine-grained pruning for expert models and outlier-aware quantization for LLM-based router models. The lack of support for agile model compression hinders the deployment of compound AI systems on CiM accelerators.To fully unlock the potential of CiM in accelerating compound AI, we present DANCE, a dual-side N:M sparse compressed digital CiM architecture with cross-layer co-optimizations: (i) At the circuit level, DANCE introduces a customized set-associative selection circuit to extract N:M sparse patterns for both weights and activations, maintaining high parallelism; (ii) At the architecture level, DANCE explores a novel design paradigm that integrates fine-grained pruning and outlier-aware quantization into a unified N:M sparsity compression framework. Experimental results show that DANCE achieves up to 4.36× energy efficiency improvement with <1% accuracy loss for ResNet-18 on CIFAR-100, and up to 2.59× energy efficiency improvement with <0.5 perplexity increase for Llama-7B on WikiText-2, compared to the conventional digital CiM baseline.

With the development of the Internet of Things (IoT), in-sensor computing techniques, such as the frame differencing and edge detection, is an effective solution for reducing large-scale sensing data transmission activities and related costs by eliminating the spatiotemporal redundancy. In these in-sensor computing tasks, thin-film transistor (TFT) technologies have gained particular interest because of their inherent support for large-area sensing-computing integration. However, existing TFT-based in-sensor computing works face challenges of high device variations, high-cost analog readouts and insufficient optimization of sequential redundancy. To address these challenges, we propose a robust spatiotemporal optimization-based in-sensor computing architecture, enabling low-power, low-latency, and efficient data compression. By combining frame differencing and edge detection, the data sparsity is greatly improved while the data movement is reduced. We develop a 4μm low-temperature polysilicon (LTPS) TFT digital standard cell library and implement a Rice compression encoder based on it. The system-level evaluations exhibit 21.5× compression ratio, 6.9× energy efficiency and 5.2× speedup improvement compared with traditional compression schemes in large-area scenarios.

Compute-In-Memory (CiM) is an emerging architecture designed to address the memory wall issue in deep neural network (DNN) inference. However, both the ADC in analog CiM (ACiM) and the adder trees in digital CiM (DCiM) contribute to significant energy and area overhead. In response to these challenges, binary neural networks (BNNs) have been proposed recently. Nevertheless, accuracy degradation poses a serious challenge to the application of BNNs in CiM due to errors in partial-sum accumulations. Furthermore, post-processing steps involving binary activation, such as ReLU, scaling, and bias addition, introduce redundant computing that cannot be effectively optimized by BNN-CiM.This work proposes a novel software-hardware co-optimization approach aimed at enabling an ADC-free analog CiM design while maintaining accuracy. Multi-Level binary computing fusion techniques comprising redundant load isolation based row fusion, in-array parallelism adaption based block fusion, and high-precision post-process elimination based layer fusion address the serious accuracy issues associated with conventional BNN algorithms. In contrast with past over 10% accuracy lost BNN-CiM on practical dataset CIFAR-10 and ImageNet, this work achieves more than 2.2x energy efficiency and 7.4x memory density than state-of-the-art with only 2% accuracy loss.

Organic thin-film transistor (OTFT) is a promising device technology for flexible large-area high-channel-count active-matrix neurostimulation system due to its flexibility and biocompatibility. However, circuits made by OTFT might be sensitive to device variation. As a result, it is difficult to achieve precise neurostimulation without any compensation structure in the pixel circuits. This work proposes a 6T2C threshold voltage compensation circuit for neurostimulation, which has low output current variation of 10.53%, reduced from the variation of 17.85% without compensation. We also improve the OTFT fabrication process with encapsulation to allow the circuits to operate under an electrolyte environment. Using the pixel circuits, we implement a 256-channel active-matrix neurostimulation system. The system can output stimulation with any pattern and allow each channel to output independently and simultaneously.

The rapid growth in the parameter count of large language models (LLMs) in recent years has placed higher demands on the density of compute-in-memory (CiM) solutions. Read-Only memory (ROM), due to its high-density advantages, has emerged as a promising CiM cell type, offering substantial task-level energy efficiency improvements over SRAM CiM. However, traditional 2D ROM CiM approaches are limited by 2D fabrication constraints, restricting scalability for LLM deployment. To address this limitation, this work explores a novel 3D back-end-of-line (BEOL)-compatible device, the channel-all-around (CAA)-IGZO TFT. Here, we propose a 3D ROM CiM with an ultra-dense cell structure and a high-throughput computing scheme. Additionally, we introduce a hybrid 3D CiM accelerator architecture that integrates both ROM and eDRAM for unprecedented density and flexibility. Evaluation results show that the proposed 3D ROM CiM, with 16 CAA-IGZO stacked layers, achieves an ultra-high memory density of 31.19 Mb/mm2/layer, a computation density of 167.6 TOPS/mm2, and high computing accuracy with a compute SNR (CSNR) of 22.6 dB, underscoring its potential for edge large-scale model acceleration. Based on this, when deployed with a LoRA-tuned GPT-2 model, the proposed hybrid 3D eDRAM-ROM architecture shows 1.7× improvement in area efficiency compared to the eDRAM-only counterpart.

Deploying a lightweight quantized model in compute-in-memory (CIM) might result in significant accuracy degradation due to reduced signal-noise rate (SNR). To address this issue, this paper presents ZEBRA, a zero-bit robust-accumulation CIM approach, which utilizes bitwise zero patterns to compress computation with ultra-high resilience against noise due to circuit non-idealities, etc. First, ZEBRA provides a cross-level design that successfully exploits value-adaptive zero-bit patterns to improve the performance in robust 8-bit quantization dramatically. Second, ZEBRA presents a multi-level local computing unit circuit design to implement the bitwise sparsity pattern, which boosts the area/energy efficiency by 2x-4x compared with existing CIM works. Experiments demonstrate that ZEBRA can achieve10% accuracy loss. Such robustness leads to much more stable accuracy for high-parallelism inference on large models in practice.

Compute-in-memory (CiM) architecture is an emerging energy-efficient processing paradigm that has attracted widespread attention in AI and Internet of Things (IoT) applications. To protect statically stored sensitive data in CiM, designers have implemented various hardware obfuscation techniques in CiM architectures. However, we observe that existing CiM obfuscation defense strategies are based on straightforward static-key deployment strategies, which pose vulnerabilities from the perspective of key-pruning algorithms for de-obfuscation.

In-sensor computing has emerged as a promising approach to mitigating huge data transmission costs between sensors and processing units. Recently, the emerging application scenarios have raised more demands of sensory technology for large-area and flexible integration. However, with thin-film technologies that are capable of providing flexible and large-area integration support, the implementation of in-sensor computing can be strongly restricted due to the low device performance, large-area integration variation, and costly interface between sensors and CMOS processors. To address this challenge, we propose an in-sensor computing architecture to facilitate high-parallelism NN pre-processing and effective data compression. The boundaries of computing parallelism are expanded by adopting compact ROM-based compute-in-memory scheme next to sensing array. Differential-frame computing provides not only excellent robustness, but also high data sparsity. A bio-inspired data compression method with residual recovery caches and zero-skip circuits further enhances output sparsity without accumulated error. Based on the proposed cross-layer design optimization, an LTPS TFT-based ROM CiM chip has been fabricated and experimentally measured. The system-level evaluation demonstrates 3.85× speedup and 5.10× energy efficiency improvement compared with traditional architecture with separated sensors and processors, outperforming existing in-sensor computing works in large-area thin-film technology scenarios.

Large-scale transformer with millions of weights achieves great success in multiple natural language processing (NLP) tasks. To release the memory bottleneck of multi-task model deployment, transfer learning tunes part of weights with shared parameters among tasks. Moreover, computing-in-memory (CIM) emerges as an efficient solution for neural network acceleration. With higher storage density, RRAM-CIM can store the large-scale model without costly weight loading, compared with another mainstream SRAM-CIM. However, the RRAM rewrite for tuned and dynamic weight matrix-vector-multiplication (MVM) in transformers requires high-cost RRAM writing in RRAM-CIM. Current hybrid CIM can compensate for the weakness of RRAM-CIM by adding SRAM-CIM with independent MVM. However, the tuned weights in transfer learning cannot be implemented due to the demand for the cooperative addition of MVM results from both shared and tuned weights. In this paper, a hybrid three-dimension RRAM-CIM and SRAM-CIM architecture (HEIRS) is proposed for multi-task transformer acceleration, with monolithically 3D integration of high-density RRAM-CIM and high-performance SRAM-CIM. The 3D RRAM-CIM with ultra-high density stores the whole model with mitigated off-chip weight loading. The SRAM-CIM is employed for efficiently performing dynamic weight MVM without RRAM rewrite. Moreover, a novel hybrid-CIM paradigm is proposed with an input selective adder tree, to support cooperative addition in transfer learning. Experiments show that, compared with RRAM-CIM and SRAM-CIM, the proposed HEIRS improves the energy efficiency by up to 7.83x and 2.29x on BERT, respectively. Meanwhile, the latency is also reduced by up to 85.5% and the storage density is enhanced by 7.2x, compared to RRAM-CIM.

Hyperdimensional computing (HDC) is an emerging paradigm that employs hypervectors (HV s) to emulate cognitive tasks. In HDC, the most time-consuming and power-hungry process is encoding, the first step that maps raw data into HV s. There have been non-volatile memory (NVM) based computing-in-memory (CiM) HDC encoding designs, which exploit the intrinsic HDC characteristics of high parallelism, massive data, and robustness. These NVM-based CiMs have shown great potential in reducing encoding time and power consumption. Among them, the ferroelectric field-effect transistor (FeFET) based designs show ultra-high energy efficiency. However, existing FeFET-based HDC encoding designs face the challenges of energy -consuming current-mode addition, inefficient HV storage, limited endurance, and single encoding method support. These challenges limit the energy efficiency, lifetime, and versatility of the designs. This work proposes an energy-efficient charge-domain FeFET-based in-memory HDC encoder, i.e., CafeHD, with extended lifetime, good versatility, and comparable accuracy. Area-efficient charge-domain computing is proposed in HDC encoding for the first time, which enables CafeHD with ultra-low power and high scalability. An HV merging technique is explored to improve the performance. A low-cost partial MAJ interface is also proposed to reduce writes. Besides, CafeHD also supports two widely used encoding methods. Results show that CafeHD on average achieves 10.9×/12.7×/3.5× speedup and 103.3×/21.9×/6.3× energy effi-ciency with ~84 % write times reduction and similar accuracy compared with the state-of-the-art ReRAM/PCMlFeFET-based CiM design for HDC encoding, respectively.

Keys grant access to devices and are the core secrets in logic obfuscation. Typically, keys are stored in tamper-proof memory and are subsequently delivered to logic locking modules through scan chains. However, recent physical attacks have successfully extracted keys directly from registers, challenging the security of the prior scan obfuscation/blocking efforts. This paper mitigates the threat of direct value extraction by proposing TroScan, an architecture that leverages the internal frequency of register chains to activate trigger circuits. We propose three key generation methods for typical defense scenarios and gate-aware obfuscation optimization. To the authors' best knowledge, this work presents the first on-chip key delivery obfuscation architecture against Electro-Optical Frequency Mapping (EOFM) attacks. Evaluation shows ~100% key obfuscation effectiveness under two EOFM attack targets. For overheads, we demonstrate the worst-case fault coverage rate of 97.6%, average area/power overheads of 7.5%/11.8%, and an average key generation success rate of 98% across 80 process voltage temperature (PVT) conditions.

Nonvolatile memory (NVM)-based computing-in-memory (CiM) has shown promising prospects in deep neural network (DNN) inference at the edge thanks to its nonvolatility and high density. Moreover, most NVMs support multi-level cell (MLC) storage, which can further boost energy efficiency and storage density. However, MLC NVM-based CiMs suffer from degraded accuracy due to device nonidealities, including large variations, nonlinear current distribution, and state drifts. Although prior works have explored various mitigation measures, such as hybrid SLC/MLC, write-and-verify, and local recovery units, the substantial costs from software support, energy, latency, and area still limit the performance. Therefore, the tradeoff between inference accuracy, storage density and compute density has become a vital challenge in NVM-based CiMs.

Tabular data are a widely used format in data science, and tree-based Machine Learning (ML) models are powerful tools and outperform Deep Neural Network (DNN) with higher accuracy for tasks on tabular data. However, computing multiple trees on massive tabular data via conventional von Neumann architectures suffers from irregular memory accesses. Prior work utilizes Analog Content Addressable Memories (ACAMs) to gain great speedup, but the analog matching method is vulnerable to device and voltage variations, and the limited density of 2D memory makes frequent data movement still inevitable for large-scale tabular data.

Implantable neuroprostheses require stimulators with high channel counts and mechanical flexibility. Organic thin-film transistor (OTFT), an essential building block for flexible circuits and system, is a promising candidate. However, the development of photolithographic OTFTs for complete bioelectronic system integration remains a challenge, due to their limited yield and uniformity. This paper reports a 4-mask photolithographic OTFT circuit integration technology, which shows a high device yield of 100% (50/50) and small device variation in threshold voltage of 0.64 V and in mobility of 4.9%. Using a device-circuit-system co-design approach, we demonstrate an active-matrix neurostimulation array comprised of 1024 pixels of a 4T1C stimulation circuits, in which independent stimulation intensity levels can be programmed and current stimulus at all channels can output simultaneously. The electrical function of the complete neurostimulation system is verified, showing a small variation of 15.59% for the output stimulation currents among pixels. This OTFT-based neurostimulation system provides a potential solution for the next-generation neurostimulators with high channel counts and mechanical flexibility.

Transformer networks have been increasingly successful in various fields. The input sequence lengths have become much larger as the algorithm and task complexity develops, which is challenging due to high computational and storage cost. Softmax and LayerNorm are bottleneck nonlinear operators in ultra-long sequence Transformer networks. To improve the efficiency of Softmax, assumption-based and quantization-based Softmax approaches are introduced. However, the sparsity potential to accelerate Softmax itself is not fully discovered. To improve the efficiency of LayerNorm, some works reduce the input size, and some works explore the pipeline. However, the sparsity potential is also not yet explored. To address these challenges, this article presents the ULSeq-TA software–hardware co-design framework. The software includes 1) the grouped sparse Softmax method to leverage the data magnifying characteristic to explore the middle and post-Softmax sparse processing and 2) the dual-path sparse LayerNorm method which explores the dimensional significance for sparse calculation. The hardware includes 1) an attention fusion architecture which reduces the on-chip memory with fused operators; 2) the grouped sparse Softmax core; and 3) the dual-path sparse LayerNorm core. Experiments show that the software achieves$4.45\times $and$7.59\times $computation reduction with little output difference for Softmax and LayerNorm, respectively. The hardware architecture supports at most 32768 sequence length with only 186-kB on-chip memory and achieves$1.75\times -1.98\times $and$3.22\times -4.32\times $speedups for sparse Softmax core and sparse LayerNorm core with little accuracy loss, respectively.

In the era of intelligent IoT, huge amount of sensor data is collected and then transmitted to processor elements in edge devices or cloud servers. The latency and energy consumption in this process have been a bottleneck and are becoming more severe. To mitigate this problem, the idea of combining sensors, memory and processors for collectively handling the data, has been proposed and explored actively in recent efforts. In this work, thin-film transistor (TFT), which has been widely adopted in display devices and flexible sensors, is exploited. It is shown that, while TFT is promising for large-area sensing, it also shows a great potential for computing and storing data for large-area and low-cost edge sensors. More specifically, we have fabricated and measured two large-area TFT-based near-sensor computing-in-memory (CiM) chips adopting embedded DRAM (eDRAM) and ROM structure respectively. We further give a detailed analysis of the integration of CiM arrays and sensor arrays to realize a sensing and data pre-process system. Measurement and simulation results show that such TFT-based solutions can accomplish real-time sensing and multiply-accumulate (MAC) processing in the analog field, which simplifies the system design with lowered energy and latency in our neural network evaluations.

Ferroelectric Field Effect Transistors (FeFETs) have spurred increasing interest in both memories and computing applications, thanks to their CMOS compatibility, low-power operation, and high scalability. However, new security threats to the FeFET-based memories also arise. A major threat is the power analysis side-channel attack (P-SCA), which exploits the power traces of the memory access to obtain data information. There have been several effective efforts on resistive nonvolatile memories (NVMs), but they fail to meet the requirements for secure FeFET-based memories due to the different capacitive FeFETs load. Directly applying these existing countermeasures to the P-SCA protection for FeFETs induces huge challenges, especially for the balance between power side-channel resistance and corresponding overheads. To address this issue, we leverage the unique features of FeFETs and propose ProtFe , namely the protection methods for FeFET-based memories, including the pipelined multi-step write strategy ( PiMWrite ) and the split array design ( SpA ). PiMWrite is proposed for general FeFET-based memories, and inserts specially designed intermediate states to mitigate information leakage with pipelined steps to reduce overheads. SpA is proposed for custom FeFET-based memories, and simultaneously writes two split portions of the array with shared minimized peripherals to go beyond the balance between security and overheads. Simulation results show that PiMWrite expands the search space of a single power trace to 21× and involves nearly zero hardware penalties. SpA presents 33× search space improvement with negligible latency, 0.6% area, and only 7.1% energy overhead. ProtFe achieves improved balance between security and overheads, compared with the state-of-the-art works.

Logic camouflage is a widely adopted technique that mitigates the threat of intellectual property (IP) piracy and overproduction in the integrated circuit (IC) supply chain. Camouflaged logic achieves functional obfuscation through physical-level ambiguity and post-manufacturing programmability. However, discussions on programmability are confined to the level of logic cells/gates, limiting the broader-scale application of logic camouflage. In this work, we propose a novel module-level configuration methodology for programmable camouflaged logic that can be implemented without additional hardware ports and with negligible resources. We prove theoretically that the configuration of the programmable camouflaged logic cells can be achieved through the inputs and netlist of the original module. Further, we propose a novel lightweight ferroelectric FET (FeFET)-based reconfigurable logic gate (rGate) family and apply it to the proposed methodology. With the flexible replacement and the proposed configuration-aware conversion algorithm, this work is characterized by the input-only programming scheme as well as the combination of high output error rate and point-function-like defense. Evaluations show an average of >95% of the alternative rGate location for camouflage, which is sufficient for the security-aware design. We illustrate the exponential complexity in function state traversal and the enhanced defense capability of locked blackbox against Boolean Satisfiability (SAT) attacks compared with key-based methods. We also preserve an evident output Hamming distance and introduce negligible hardware overheads in both gate-level and module-level evaluations under typical benchmarks.

Multi-level cell (MLC) NVM-based CiM has become a promising candidate in computing-in-memory (CiM) designs because of its non-volatility, high cell density, and improving compatibility with the CMOS process. However, most MLC CiM faces the challenges of non-ideal device limitations, including the low on/off ratio, large device-to-device variations, and read disturbances, which limit the computing accuracy, reliability, and throughput performance. This work proposes Victor, a variation-resilient approach using cell-clustered charge-domain computing for high-density and high-throughput MLC CiM. A cell-clustered-computing with local recovery unit (LRU) design methodology is proposed to improve matrix-vector-multiplication (MVM) reliability and throughput. To showcase the capability of Victor, 2b-4b MLC Resistive RAM (RRAM) is taken as an example for design and evaluation. Results show that Victor reaches 3.56x energy efficiency, 4x variation tolerance compared with the prior ratio-based MLC CiM. In addition, the throughput is improved by 3.1x with less than 1% DNN accuracy loss. Moreover, a dynamic boundary adaption approach is proposed to restore the accuracy loss of state drifting, which in return reduces the energy and latency overhead by 100x and 1.25x, respectively, compared with the conventional write-and-verify approach.

Genome sequence analysis is a powerful tool in medical and scientific research. Considering the inevitable sequencing errors and genetic variations, approximate string matching (ASM) has been adopted in practice for genome sequencing. However, with exponentially increasing bio-data, ASM hardware acceleration is facing severe challenges in improving the throughput and energy efficiency with the accuracy constraint.This paper presents ASMCap, an ASM acceleration approach for genome sequence analysis with hardware-algorithm co-optimization. At the circuit level, ASMCap adopts charge-domain computing based on the capacitive multi-level content addressable memories (ML-CAMs), and outperforms the state-of-the-art ML-CAM-based ASM accelerators EDAM with higher accuracy and energy efficiency. ASMCap also has misjudgment correction capability with two proposed hardware-friendly strategies, namely the Hamming-Distance Aid Correction (HDAC) for the substitution-dominant edits and the Threshold-Aware Sequence Rotation (TASR) for the consecutive indels. Evaluation results show that ASMCap can achieve an average of 1.2x (from 74.7% to 87.6%) and up to 1.8x (from 46.3% to 81.2%) higher F1score (the key metric of accuracy), 1.4x speedup, and 10.8x energy efficiency improvement compared with EDAM. Compared with the other ASM accelerators, including ResMA based on the comparison matrix, and SaVI based on the seeding strategy, ASMCap achieves an average improvement of 174x and 61x speedup, and 8.7e3x and 943x higher energy efficiency, respectively.

Accommodating all the weights on-chip for large-scale NNs remains a great challenge for SRAM based computing-in-memory (SRAM-CIM) with limited on-chip capacity. Previous non-volatile SRAM-CIM (nvSRAM-CIM) addresses this issue by integrating high-density single-level ReRAMs on the top of high-efficiency SRAM-CIM for weight storage to eliminate the off-chip memory access. However, previous SL-nvSRAM-CIM suffers from poor scalability for an increased number of SL-ReRAMs and limited computing efficiency. To overcome these challenges, this work proposes an ultra-high-density three-level ReRAMs-assisted computing-in-nonvolatile-SRAM (TL-nvSRAM-CIM) scheme for large NN models. The clustered n-selector-n-ReRAM (cluster-nSnRs) is employed for reliable weight-restore with eliminated DC power. Furthermore, a ternary SRAM-CIM mechanism with differential computing scheme is proposed for energy-efficient ternary MAC operations while preserving high NN accuracy. The proposed TL-nvSRAM-CIM achieves 7.8x higher storage density, compared with the state-of-art works. Moreover, TL-nvSRAM-CIM shows up to 2.9x and 2.0x enhanced energy efficiency, respectively, compared to the baseline designs of SRAM-CIM and ReRAM-CIM, respectively.

The concept of multi-level cell (MLC) enabled by emerging memory device technologies has introduced new opportunities for memory density improvement, including in the cache scenarios with some high-endurance technologies. However, the access latency of different bits within an MLC memory cell is inherently nonuniform, which raises challenges in utilizing the MLC technology for low-latency cache. To exploit the access performance of the MLC cache, the key is identifying the hot data blocks and mapping them to fast MLC bits. Prior works perform the hot/cold data management based on block-wise access patterns with considerable hardware overheads. Inspired by the memory hierarchy, this work proposes a new concept of in-cell hierarchical victim cache as embedded memory and systematically presents the cache architecture, operating mechanism, design space exploration, optimizations, and evaluations. By utilizing the slow bits as the victim buffer, lower hit latency with low implementation overheads is achieved. Based on the in-cell victim cache, two optimization techniques, namely selective victim retrieval, and victim-bypassing write (VBW) are proposed, to further improve performance and prolong cache endurance, respectively. Evaluation results show that the MLC victim cache significantly improves the average system performance by 20.2% over conventional MLC cache and achieves 98% performance of the upper bound implemented with 2x memory cells SLC. The proposed VBW also reduces energy consumption by 21% and improves lifetime by over 80%, showing a new promising dimension for future MLC cache design.

SRAM-based computing-in-memory (CIM) has been widely explored to accelerate neural networks (NNs). However, it is challenging to store all weights of many modern NNs due to limited on-chip SRAM capacity. This bottleneck induces a large amount of off-chip DRAM accesses and impedes the improvement of performance and energy efficiency. This paper proposes a new approach of computing in resistive random-access memory (ReRAM)-assisted energy- and area-efficient SRAM (CREAM) for accelerating large-scale NNs while eliminating the DRAM access. The NN weights are all stored in high-density on-chip ReRAMs and restored to the proposed non-volatile SRAM (nvSRAM) CIM cells with array-level parallelism. Furthermore, to deal with the influence of ReRAM and CMOS variations, a novel layer-wise and bit-wise weight-configuration search algorithm is proposed by leveraging different sensitivity of each layer in NN models. A data-aware weight-mapping method is also presented to efficiently map NN models to ReRAMs in CREAM for high computation parallelism. The experiment results show$10.3\times $weight storage density over the standard 6T SRAM array. Evaluations of ResNet-18 and VGG-9 on CIFAR-10/CIFAR-100 datasets show up to$3.47\times $and$1.70\times $energy efficiency over two baseline designs of SRAM-CIM and ReRAM-CIM, respectively, in addition to 15.6% higher accuracy than ReRAM-CIM under device variations.

Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and energy efficiency due to the memory wall bottleneck. Compute-in-memory (CiM) is a promising mitigation approach by enabling parallel and in-situ multiply-accumulate (MAC) operations within the memory array. Thanks to the good matching of capacitors, SRAM-based charge-domain CiM (Q-CiM) has shown its potential for higher row-wise parallelism. However, the peripheral circuits of Q-CiM, such as the input drivers and analog-digital converters (ADCs), limit further improvement of throughput and area efficiency. This paper proposes a single-ADC multi-bit accumulation CiM macro architecture SAMBA, which can perform multi-bit MAC operation with ReLU of two vectors in one CiM cycle by only a single A/D conversion to mitigate the ADC overhead. In addition, post-correction methods are proposed to compensate the non-linearity of sensitive circuit modules in SAMBA to recover the accuracy drop due to the capacitor mismatch. A proof-of-concept macro is fabricated in a 65nm process and achieves 51.2GOPS throughput and 10.3TOPS/W energy efficiency, while showing 88.6% accuracy on CIFAR-10 and 64.8% accuracy on the CIFAR-100 with VGG-8 model.

This paper presents an approach to the mitigation of harmonic distortions in wideband current-steering digital-to-analog converters (DACs). This approach enables code-independent constant-switching-activity data-weighted-averaging (CSA-DWA) with the extra area and power overhead by exploiting redundant current sources. With CSA-DWA, a 16-bit 4.0-GS/s calibration-free DAC is designed in 65 nm CMOS. To achieve high-speed low-complexity CSA-DWA decoding, the most-significant-bit (MSB) segment is set to 5 bits. The MSB switching activities are regulated to be constant with 1-bit randomized switching activity to minimize the non-linearity due to the MSB switching activity truncation errors in the CSA-DWA decoder. Furthermore, a power delivery scheme is adopted to reduce the IR-drop mismatch between the switching elements. Experimental results show that this DAC achieves$>$70 dBc spurious-free dynamic range (SFDR) and$< -80$dBc third-order intermodulation distortion (IM3) up to 1 GHz. With the proposed CSA-DWA, SFDR and IM3 are improved by 4–15 dB and 5–14 dB, respectively, across the Nyquist band.

The rapid development of edge artificial intelligence (AI) raises high requirements for data-intensive neural network (NN) computing and storage of edge devices, under a limited chip footprint and energy supply source. As a promising approach for energy-efficient processing, computing-in-memory (CiM) has been widely explored in recent efforts to mitigate the data transmission bottleneck. However, CiM with small on-chip memory capacity results in expensive data reloads, limiting its deployment in large-scale NN applications. Moreover, the increased leakage under advanced CMOS scaling lowers the energy efficiency. In this work, device-circuit synergy based on the indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) is adopted to address these challenges. First, 4-transistor-1-capacitor (4T1C) IGZO eDRAM CiM is proposed with higher density than SRAM-based CiM and enhanced data retention by both lower device leakage and a differential cell structure. Second, exploiting the back-end-of-line (BEOL) compatibility and vertical integration of emerging channel-all-around (CAA) IGZO devices, 3D eDRAM CiM is proposed, which paves the way for IGZO-based CiM with ultra-high density. Circuit techniques including time-interleaved computing and differential refresh are proposed to guarantee accuracy under large-capacity 3D CiM. As a proof of concept, a$128 \times 32$CiM array is fabricated under a foundry low-temperature poly-crystalline and oxide (LTPO) technology, demonstrating high computing linearity and long data retention. Benchmarks on scaled 45nm IGZO technology show energy efficiency of 686 TOPS/W for array only, and 138 TOPS/W while considering peripheral overheads.

Bitwise logic-in-memory (BLiM) is a promising approach to efficient computing in data-intensive applications by reducing data movement between memory and processing units. However, existing BLiM techniques have challenges towards higher energy efficiency and speed: (i) DC power in computing and result sensing is significant in most existing RRAM and MRAM based BLiM solutions; (ii) before the computation result could be stored back to the same memory array, existing BLiM has to sense the result first, at the cost of extra power and latency due to the sense amplifiers (SAs). Targeting at higher energy efficiency and speed, this work proposes a new BLiM approach in 2-transistor/ cell (2T/C) and 3T/C topologies based on ferroelectric field-effect transistors (FeFETs), supporting a variety of computing functions. For the first time, this new approach supports SA-free direct write-back, and consumes no static power for computing and sensing with proposed fully dynamic computing and sensing schemes. Another highlight is that this work further minimizes the dynamic power by (i) reducing the chance of bitline charging activities and (ii) recycling the bitline charge in sensing multi-operand operations. Compared with prior BLiM methods based on nonvolatile memories, evaluation shows 3.0x–100x latency and 1.3x–200x energy improvement for typical in- memory XOR operation, which further leads to 3.0x–58x and 3.2x–78x savings of latency and energy, respectively, for the application of advanced-encryption standard (AES).

Time interleaving (TI) is an effective approach to higher speed conversion of current-steering digital-to-analog converters (DACs). However, achieving high linearity performance for these TI DACs is challenging during interleaving synchronization, output current summation, and parasitic capacitance control. This article exploits the design of a 6.0-GS/s 14-bit two-channel time-interleaved DAC in a 65-nm CMOS process for communication systems. A novel asymmetric current-tree summation network is proposed to reduce the current summation nonlinearity in the DAC. A differential clock phase and duty-cycle calibration scheme is also adopted while achieving low complexity. Furthermore, a current source layout optimization scheme is proposed that significantly reduces the parasitic capacitance of interleaving switches and improves the linearity. Measurement results of the fabricated DAC show 6–20-dB spurious-free dynamic range (SFDR) improvement with the proposed techniques, achieving >60-dB SFDR up to 1355 MHz and >50-dB SFDR up to the Nyquist.

Computing-in-memory (CiM) is a promising technique to achieve high energy efficiency in data-intensive matrix-vector multiplication (MVM) by relieving the memory bottleneck. Unfortunately, due to the limited SRAM capacity, existing SRAM-based CiM needs to reload the weights from DRAM in large-scale networks. This undesired fact weakens the energy efficiency significantly. This work, for the first time, proposes the concept, design, and optimization of computing-in-ROM to achieve much higher on-chip memory capacity, and thus less DRAM access and lower energy consumption. Furthermore, to support different computing scenarios with varying weights, a weight fine-tune technique, namely Residual Branch (ReBranch), is also proposed. ReBranch combines ROM-CiM and assisting SRAM-CiM to achieve high versatility. YOLoC, a ReBranch-assisted ROM-CiM framework for object detection is presented and evaluated. With the same area in 28nm CMOS, YOLoC for several datasets has shown significant energy efficiency improvement by 14.8x for YOLO (DarkNet-19) and 4.8x for ResNet-18, with <8% latency overhead and almost no mean average precision (mAP) loss (−0.5% ~ +0.2%), compared with the fully SRAM-based CiM.

Computing-in-memory has been widely explored to accelerate DNN. However, most existing CIM cannot store all NN weights due to limited SRAM capacity for edge AI devices, inducing a large amount off-chip DRAM access. In this paper, a new computing in ReRAM-assisted energy and area-efficient SRAM (CREAM) is proposed for implementing large-scale NNs while eliminating off-chip DRAM access. The weights of DNN are all stored in the high-dense on-chip ReRAM devices and restored to the proposed nvSRAM-CIM cells with array-level parallelism. A data-aware weight-mapping method is also proposed to enhance the CIM performance while fully exploiting the hardware utilization. Experiment results show that the proposed CREAM scheme enhances the storage density by up to 7.94x compared to the traditional SRAM arrays. The energy-efficiency of proposed CREAM is also enhanced by 2.14x and 1.99x, compared to the traditional SRAM-CIM with off-chip DRAM access and ReRAM-CIM circuits, respectively.

Motivated by reducing the data transfer activities in data-intensive neural network computing, SRAM-based compute-in-memory (CiM) has made significant progress. Unfortunately, SRAM has low density and limited on-chip capacity. This makes the deployment of large models inefficient due to the frequent DRAM access to update the weight in SRAM. Recently, a ROM-based CiM design, YOLoC, reveals the unique opportunity of deploying a large-scale neural network in CMOS by exploring the intriguing high density of ROM. However, even though assisting SRAM has been adopted in YOLoC for task transfer within the same domain, it is still a big challenge to overcome the read-only limitation in ROM and enable more flexibility. Therefore, it is of paramount significance to develop new ROM-based CiM architectures and provide broader task space and model expansion capability for more complex tasks.

In normally-off instant-on applications, power-gating of the embedded memory is an effective way for higher power efficiency by preventing long-standby-time leakage energy. Recent efforts of nonvolatile SRAM (nvSRAM) design with in-cell NVM element backup provide an efficient way for both normal-mode computing and off-mode backup and restore (B&R) operations. For these efforts, circuit innovations are required to achieve optimal balance between B&R energy and area overheads. In this paper, we report a novel 8T/cell FeFET-based nvSRAM design that outperforms prior FeFET-based designs with higher density, while still maintaining the advantage of only sub-fJ energy for each B&R operation, 363x lower than the existing RRAM-based nvSRAM design. Compared with prior FeFET-based designs, this design reduces the B&R transistor count per cell from 4 to only 2, which leads to a significant total area overhead reduction of 11%.

In recent years, convolutional neural networks (CNNs) have achieved significant advancements in various fields. However, the computation and storage overheads of CNNs are overwhelming for Internet-of-Things devices. Both network pruning algorithms and hardware accelerators have been introduced to empower CNN inference at the edge. Network pruning algorithms reduce the size and computational cost of CNNs by regularizing unimportant weights to zeros. However, existing works lack intrakernel structured types to tradeoff between sparsity and hardware efficiency, and the index storage for irregularly pruned networks is significant. Hardware accelerators leverage the sparsity of pruned CNNs to improve energy efficiency. However, their process element (PE) utilization rate is low because of uneven sparsity among input convolutional kernels. To overcome these problems, we propose PACA: a Pattern pruning Algorithm and Channel-fused high PE utilization Accelerator for CNNs. It includes three parts: a pattern pruning algorithm to explore the intrakernel sparsity type and reduce the index storage, a channel-fused hardware architecture to reduce the PEs’ idle rate and improve the performance, and a heuristic and taboo search-based smart fusion scheduler to analyze the idle PE problem and schedule the channel fusion in hardware. To demonstrate the effectiveness of PACA, we have implemented the software parts by Python and the hardware architecture by RTL codes. Experimental results on various datasets show that compared with an existing work, PACA can reduce the index storage overhead by$3.47\times $–$5.63\times $with 3.85–9.12 average patterns, and it can improve the hardware performance by$2.01\times $–$5.53\times $because of PEs’ idle rate reduction.

As one type of associative memory, content-addressable memory (CAM) has become a critical component in several applications, including caches, routers, and pattern matching. Compared with the conventional CAM that could only deliver a “matched or not-matched” result, emerging multilevel CAM (ML-CAM) is capable of delivering “the degree of match” with multilevel distance calculation. This feature has been desired in applications that need beyond-Boolean matching results. However, existing ML-CAM designs are limited by the bit-cell device discharging current mismatch and vulnerability to the timing of sensing operations for distance calculation. This inherent constraint makes it difficult to further improve the accuracy and scalability toward higher accuracy and higher dimension matching. In this work, we propose CapCAM, a multilevel Capacitive Content Addressable Memory. It could be implemented based on either static random-access memory (SRAM) or emerging technologies, e.g., the ferroelectric field-effect transistor (FeFET). CapCAM could provide linear and stable voltage drop scaled by the match degree and need no strict timing for result sensing, which embraces the high-accuracy and high-scalability search. The inherent enabler of CapCAM is the charge-domain computing mechanism. This article will present the basic concept, operating mechanisms, detailed circuit designs, and circuit-level simulations of CapCAM. Besides, we apply CapCAM to few-shot learning applications and compare CapCAM with the current-domain TCAM designs. Results show 99.2% accuracy for a five-way five-shot classification task with our proposed CapCAM design while considering 1-fF capacitors, 20-domain FeFETs, and 256 columns. In contrast, the prior work based on discharging dynamics requires strict timing controls and suffers from accuracy degradation under the same configuration, which demonstrates CapCAM’s capability of low-power, accurate, and scalable multilevel CAM (ML-CAM) computing.

Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but bulky SRAM-based TCAM design, and also denser but less reliable or higher-write-power TCAM designs using nonvolatile memory (NVM) devices. Meanwhile, some TCAM designs using dynamic memories have been also proposed. Although dynamic design TCAM is denser than CMOS SRAM TCAM and more reliable than NVM TCAM, the conventional row-by-row refresh operations land up with a bottleneck of interference with normal TCAM activities. Therefore, this paper proposes a custom low-power dynamic TCAM using nanoelectromechanical (NEM) relay devices utilizing one-shot refresh to solve the memory refresh problem. By harnessing the unique NEM relay characteristics with a proposed novel cell structure, the proposed TCAM occupies a small footprint of only 3 transistors (with two NEM relays integrated on the top through the back-end-of-line process), which significantly outperforms the density of 16-transistor SRAM-based TCAM. In addition, evaluations show that the proposed TCAM improves the write energy efficiency by 2.31x, 131x, and 13.5x over SRAM, RRAM, and FeFET TCAMs, respectively; The search energy-delay-product is improved by 12.7x, 1.30x, and 2.83x over SRAM, RRAM, and FeFET TCAMs, respectively.

Content-addressable memory (CAM) has been a critical component in pattern matching and also machine-learning applications. Recently emerged CAM that is capable of delivering multi-level distance calculation is promising for applications that need matching results beyond Boolean results of ?matched" and ?not matched". However, existing multi-level CAM designs are constrained by the bit-cell device discharging current mismatch and the strict timing of sensing operations for distance calculation. This fact results in the challenge of further improving the accuracy and scalability towards higher-resolution and higher-dimension matching. This work presents a multi-level CAM design that is capable of delivering high-accuracy and high-scalability search, which is immune to the discharging device mismatch and needs no strict timing for result sensing. The inherent enabler is the charge-domain computing mechanism. This work will present the operating mechanisms, the circuit simulation, and content-matching evaluation results, showing the promise towards high reliability, high energy efficiency, and high scalability.

This paper presents dynamic switching sequence (DSS) for current-steering digital-to-analog converters (DACs). Unlike conventional static switching sequence (SSS), the proposed DSS dynamically selects from pre-defined switching sequences, and achieves a minimized integral nonlinearity (INL) that is even lower than the lower bound of traditional SSS. Moreover, it works effectively with the digital pre-distortion (DPD) technique to further reduce the residual nonlinearity. Simulation results of a 16-bit segmented DAC show an average INL reduction from 37.9 LSBs (SSS, with 17.7 LSBs as the lower bound) and 10.3 LSBs (SSS+DPD, normalized), to 8.2 LSBs (with DSS) and 0.2 LSBs (DSS+DPD).

In the era of Intelligent IoT, huge amount of sensor data is collected and then transmitted to processor elements in edge devices or cloud servers. The latency and energy consumption in this process have been a bottleneck and are becoming more severe. To mitigate this problem, the idea of combining sensors, memory and processors for collectively handling the data, has been proposed and explored actively in recent efforts. In this work, thin-film transistor (TFT), which has been widely adopted in display devices and flexible sensors, is exploited. It is shown that, while TFT is promising for near-sensor processing architecture, it also shows a great potential for computing and storage for large-area and low-cost edge sensors. More specifically, we propose an almost-nonvolatile near-sensor computing-in-memory (CiM) array based on indium-gallium- zinc-oxide (IGZO) TFT, and further, integrate the CiM array with a sensor array to be a sensing and data pre-process system. We show that such a TFT-based solution can accomplish realtime sensing and multiply-and-accumulate (MAC) processing in the analog field, which simplifies the system design with lowered energy and latency in our neural network evaluations.

This paper presents a correlation-based 3rd-order inter-stage gain error background calibration technique for high-performance pipeline ADCs, with the reduced signal swing overhead to only 8% during the pseudo noise (PN) sequence injection. This is achieved by exploiting the use of paired comparators along with a dedicated calibration algorithm, namely the adaptive dither injection calibration (ADIC) technique, which further alleviates the trade-off between the signal-to-noise ratio and the non-linearity. Monte Carlo simulation results of a 16-bit 100MS/s ADC show that with an amplifier of 20dB loop gain, the spurious-free dynamic range (SFDR) is improved from 64.8dB to a mean value of 106.6dB and a standard deviation of 1.1dB.

Ternary content addressable memory (TCAM) is one type of associative memory and has been widely used in caches, routers, and many other mapping-aware applications. While the conventional SRAM-based TCAM is high speed and bulky, there have been denser but slower and less reliable nonvolatile TCAMs using nonvolatile memory (NVM) devices. Meanwhile, some CMOS TCAMs using dynamic memories have been also proposed. Although dynamic TCAM could be denser than the 16T SRAM TCAM and more reliable than the nonvolatile TCAMs, CMOS dynamic TCAMs still suffer from the row-by-row refresh energy and time overheads. In this article, we propose dynamic TCAM using nanoelectromechanical (NEM) relays (DyTAN), and utilize one-shot refresh (OSR) to solve the memory refresh problem. By exploiting the unique NEM relay characteristics, DyTAN outperforms the existing works in the balance between density, speed, and power efficiency. Compared with the 16T SRAM-based TCAM, the 5T CMOS dynamic TCAM, the 2T2R TCAM, and the 2FeFET TCAM, evaluations show that the proposed DyTAN reduces the write energy by up to$2.3\times $,$1.3\times $,$131\times $, and$13.5\times $, and improves the search energy-delay-product (EDP) by up to$12.7\times $,$1.7\times $,$1.3\times $, and$2.8\times $, respectively.

Ferroelectric FETs (FeFETs) have emerged as a promising multi-level/cell (MLC) nonvolatile memory (NVM) candidate for low-power applications. This originates from the advantages of both efficient memory access and intrinsic device-level in-memory computing flexibilities. However, there still exist challenges for FeFET MLC NVM: (i) high power consumption in read operations due to high-gain requirement for sense amplifiers during sensing, and (ii) high latency and energy consumption in write operations with conventional recursive program-and-verify. Targeting at lower power, less latency, and higher density, this work investigates and optimizes the read and write approaches to MLC FeFET NVM design: (i) Adaptive FeFET memory State Mapping (ASM) between the FeFET drain-source current and the digital states to increase the sensing margin; (ii) Adaptive FeFET Gate Biasing (AGB) read methods that adopt the optimized FeFET gate voltage to boost the sensible dynamic range and to store more levels of states per cell; (iii) Adaptive Prediction-based Direct (APD) write methods that minimize the program-andverify activities. Evaluations show significant latency and energy improvement. Furthermore, the number of sensible levels of states per cell is also increased with an enhanced dynamic sensing range and an enhanced sensing margin.

Recently CNN-based methods have made remarkable progress in broad fields. Both network pruning algorithms and hardware accelerators have been introduced to accelerate CNN. However, existing pruning algorithms have not fully studied the pattern pruning method, and current index storage scheme of sparse CNN is not efficient. Furthermore, the performance of existing accelerators suffers from no-load PEs on sparse networks. This work proposes a software-hardware co-design to address these problems. The software includes an ADMM-based method which compresses the patterns of convolution kernels with acceptable accuracy loss, and a Huffman encoding method which reduces index storage overhead. The hardware is a fusion-enabled systolic architecture, which can reduce PEs' no-load rate and improve performance by supporting the channel fusion. On CIFAR-10, this work achieves 5.63× index storage reduction with 2-7 patterns among different layers with 0.87% top-1 accuracy loss. Compared with the state-of-art accelerator, this work achieves 1.54×-1.79× performance and 25%-34% reduction of no-load rate with reasonable area and power overheads.

This paper proposes low-power design of embedded dynamic random-access memory (eDRAM) using emerging nanoelectromechanical (NEM) relay devices. The motivation of this work is to reduce the standby refresh power consumption through the improvement of retention time of eDRAM cells. In this paper, it is revealed that the tunable beyond-CMOS characteristics of emerging NEM relay devices, especially the ultra-high OFF-state drain-source resistance, open up new opportunities with device-circuit co-design. In addition, the pull- in and pull-out threshold voltages are tilled to fit the operating mechanisms of eDRAM, so as to support low-voltage operations along with long retention time. Excitingly, when low-gate-leakage thick-gate transistors are used together, the proposed NEM-relay- based eDRAM exhibits so significant retention time improvement that it behaves almost "nonvolatile". Even if using thin-gate transistors in a 130nm CMOS, the evaluation of the proposed eDRAM shows up to 63x and 127x retention time improvement at 1.0V and 1.4V supply, respectively. Detailed performance benchmarking analysis, along with the practical CMOS- compatible NEM relay model, the eDRAM design and optimization considerations, is included in this paper.

There is growing interest in deploying energy harvesting processors and accelerators in Internet of Things (IoT). Energy harvesting harnesses the energy scavenged from the environment to power a system. Although it has many advantages over battery-operated systems such as lightweight, compact size, and no necessity of recharging and maintenance, it may suffer frequently power-down and a fluctuating power supply even with power on. Non-volatile processor (NVP) is a promising architecture for effective computing in energy harvesting scenarios. Recently, non-volatile accelerators (NVA) have been proposed to perform computations of deep learning algorithms. In this paper, we overview the recent studies of NVP and NVA across the layers of hardware, architecture, software and their co-design. Especially, we present the design insights of how the state-of-the-art works adapt their specific designs to the intermittent and fluctuating power conditions with the energy harvesting technology. Finally, we discuss recent trends using NVP and NVA in energy harvesting scenarios.

Compute-in-memory (CiM) is a promising method for mitigating the memory wall problem in data-intensive applications. The proposed bitwise logic-in-memory (BLiM) is targeted at data intensive applications, such as database, data encryption. This work proposes a low-power BLiM approach using the emerging nonvolatile ferroelectric FETs with direct write-back and data-adaptive dynamic sensing interface. Apart from general-purpose random-access memory, it also supports BLiM operations such as copy, not, nand, xor, and full adder (FA). The novel features of the proposed architecture include: (i) direct result-write-back based on the remnant bitline BLiM charge that avoids bitline sensing and charging operations; (ii) a fully dynamic sensing interface that needs no static reference current, but adopts data-adaptive voltage references for certain multi-operand operations, and (iii) selective bitline charging from wordline (instead of pre-charging all bitlines) to save power and also enable direct write-back. Detailed BLiM operations and benchmarking against conventional approaches show the promise of low-power computing with the FeFET-based circuit techniques.

ReRAM-based processing-in-memory (PIM) architecture is a promising solution for deep neural networks (NN), due to its high energy efficiency and small footprint. However, traditional PIM architecture has to use a separate crossbar array to store either positive or negative (P/N) weights, which limits both energy efficiency and area efficiency. Even worse, imbalance running time of different layers and idle ADCs/DACs even lower down the whole system efficiency. This paper proposes AERIS, an Area/Energy-efficient 1T2R ReRAM based processing-In-memory NN System-on-a-chip to enhance both energy and area efficiency. We propose an area-efficient 1T2R ReRAM structure to represent both P/N weights in a single array, and a reference current cancelling scheme (RCS) is also presented for better accuracy. Moreover, a layer-balance scheduling strategy, as well as the power gating technique for interface circuits, such as ADCs/DACs, is adopted for higher energy efficiency. Experiment results show that compared with state-of-the-art ReRAM-based architectures, AERIS achieves 8.5x/1.3x peak energy/area efficiency improvements in total, due to layer-balance scheduling for different layers, power gating of interface circuits, and 1T2R ReRAM circuits. Furthermore, we demonstrate that the proposed RCS compensates the non-ideal factors of ReRAM and improves NN accuracy by 5.2% in the XNOR net on CIFAR-10 dataset.

Making embedded memory symmetric provides the capability of memory access in both rows and columns, which brings new opportunities of significant energy and time savings if only a portion of data in the words need to be accessed. This work investigates the use of ferroelectric field-effect transistors (FeFETs), an emerging nonvolatile, low-power, deeply-scalable, CMOS-compatible transistor technology, and proposes a new 3-transistor/cell symmetric nonvolatile memory (SymNVM). With ~1.67x higher density as compared with the prior FeFET design, significant benefits of energy and latency improvement have been achieved, as evaluated and discussed in depth in this paper.

High-precision digital-to-analog converter (DAC) is a critical component in process control, data acquisition, and testing instruments. In order to achieve high resolution and a wide-temperature range, conventional designs have been adopting high-cost thin-film resistors with laser-trimming to improve the matching property and thus the DAC resolution. In this work, targeting at lowering the cost, we propose an analog resistor redundancy, full code, and piecewise-linear calibration scheme to enable the use of low-cost poly resistors in a standard CMOS process. In order to overcome the drift over a wide temperature range, a feedback circuit is proposed to guarantee that the resistance of the switch can track the resistor with temperature changes. Therefore, the DAC can be calibrated under a specific temperature and tested under an arbitrary temperature from -40℃ to 85℃ using the same calibration codes. The 16b DAC was implemented in a 0.25μm 5V CMOS process with 5V CMOS devices and poly resistors rather than thin film resistor. The test result shows that it can achieve the INL≤0.5LSB, INL≤4LSB, and INL≤4LSB at 25℃, -40℃, and 85℃, respectively, using the same calibration code. It settles in 1μs and it has below 5nV ⋅ s glitch. The current consumption is 1.7mA from 5V voltage supplies.

Negative-capacitance FETs (NCFETs) are a promising candidate for low-power circuits with intrinsic features, e.g., the steep switching slope. Prior works have shown potential for enabling low-power digital logic and memory design with NCFETs. Yet, it is still not quite clear how to harness these new features of NCFETs for analog functionalities. This article provides more insights into the circuit design space with new device characteristics and investigates its deployment in analog circuits, specifically, time-domain analog-to-digital converters (ADCs) and phase-locked loops (PLLs). We propose and optimize a novel digital-based clocked comparator and a capacitor-based voltage-to-time converter (VTC), which are essential building blocks in ADCs and PLLs. Evaluation results show beyond-FinFET comparison speed and enhanced linearity for the proposed NCFET-based clocked comparator and VTC, respectively. Such improvement is achieved by exploiting the steeper slope and increased output impedance of NCFETs. More details on design details and a discussion are provided in this article.

Nonvolatile processors have emerged as one of the promising solutions for energy harvesting scenarios, among which Wireless Sensor Networks (WSN) provide some of the most important applications. In a typical distributed sensing system, due to difference in location, energy harvester angles, power sources, etc. different nodes may have different amount of energy ready for use. While prior approaches have examined these challenges, they have not done so in the context of the features offered by nonvolatile computing approaches, which disrupt certain foundational assumptions. We propose a new set of nonvolatility-exploiting optimizations and embody them in the NEOFog system architecture. We discuss shifts in the tradeoffs in data and program distribution for nonvolatile processing-based WSNs, showing how non-volatile processing and non-volatile RF support alter the benefits of computation and communication-centric approaches. We also propose a new algorithm specific to nonvolatile sensing systems for load balancing both computation and communication demands. Collectively, the NV-aware optimizations in NEOFog increase the ability to perform in-fog processing by 4.2X and can increase this to 8X if virtualized nodes are 3X multiplexed.

We present a novel 3D-SRAM cell using a Monolithic 3D integration (M3D-IC) technology for realizing both robustness and In-memory Boolean logic compute support. The proposed two-layer design makes use of additional transistors over the SRAM layer to enable assist techniques as well as provide logic functions (such as AND/NAND, OR/NOR, XNOR/XOR) without degrading cell density. Through analysis, we provide insights into the benefits provided by three memory assist and two logic modes and evaluate the energy efficiency of our proposed design. Assist techniques improve SRAM read stability by 2.2x and increase the write margin by 17.6%, while staying within the SRAM footprint. By virtue of increased robustness, the cell enables seamless operation at lower supply voltages and thereby ensures energy efficiency. Energy Delay Product (EDP) reduces by 1.6x over standard 6T SRAM with a faster data access. Transistor placement and their biasing technique in layer-2 enables In-memory bitwise Boolean computation. When computing bulk In-memory operations, 6.5x energy savings is achieved as compared to computing outside the memory system.

As we enter an era witnessing the closer end of Dennard scaling, where further reduction in power supply-voltage to reduce power consumption becomes more challenging in conventional systems, a goal of developing a system capable of performing large computations with minimal area and power overheads needs more optimization aspects. A rigorous exploration of alternate computing techniques, which can mitigate the limitations of Complementary Metal-Oxide Semiconductor (CMOS) technology scaling and conventional Boolean systems, is imperative. Reflecting on these lines of thought, in this article we explore the potential of non-Boolean computing employing nano-oscillators for performing varied functions. We use a two coupled nano-oscillator as our basic computational model and propose an architecture for a non-Boolean coupled oscillator based co-processor capable of executing certain functions that are commonly used across a variety of approximate application domains. The proposed architecture includes an accuracy tunable knob, which can be tuned by the programmer at runtime. The functionality of the proposed co-processor is verified using a soft coupled oscillator model based on Kuramoto oscillators. The article also demonstrates how real-world applications such as Vector Quantization, Digit Recognition, Structural Health Monitoring, and the like, can be deployed on the proposed model. The proposed co-processor architecture is generic in nature and can be implemented using any of the existing modern day nano-oscillator technologies such as Resonant Body Transistors (RBTs), Spin-Torque Nano-Oscillators (STNOs), and Metal-Insulator Transition (MITs) . In this article, we perform a validation of the proposed architecture using the HyperField Effect Transistor (FET) technology-based coupled oscillators, which provide improvements of up to 3.5× increase in clock speed and up to 10.75× and 14.12× reduction in area and power consumption, respectively, as compared to a conventional Boolean CMOS accelerator executing the same functions.

This paper proposes the use of monolithic 3-D integration technology in designing a novel two-layer 3-D-static random access memory (3-D-SRAM) cell in standard 6T-SRAM footprint. The proposed 3-D-SRAM cell is capable of data access from both the layers. The cell is designed to retrieve row-wise and column-wise data concurrently from the memory array. This memory design can cater to applications and workloads requiring multidimensional data access for enhancing system performance. The novel 3-D layout technique ensures the same footprint as a 6T-SRAM cell despite enhancing the functionality. The design ensures no degradation in the cell stability and performance. Voltage reduction in layer-2 provides 5.4× power savings during column-wise data access. We analyze the implications of employing the proposed SRAM to achieve efficient data access for integral image algorithm. We obtain 2.15× savings in access time and 7.81% access energy savings while accessing data from a 32-kB memory array to compute integral image for a region of 32 rows and 16 columns.

Batteryless energy harvesting systems face a twofold challenge in converting incoming energy into forward progress. Not only must such systems contend with inherently weak and fluctuating power sources, but they have very limited temporal windows for capitalizing on transitory periods of above-average power. To maximize forward progress, such systems should aggressively consume energy when it is available, rather than optimizing for peak averagecase efficiency. However, there are multiple ways that a processor can trade between consumption and performance. In this paper, we examine two approaches, frequency scaling and resource scaling, and develop a predictor-driven scheme for dynamically allocating future power budgets between the two techniques. We show that our solution can achieve forward progress equal to 2.08X of the baseline Out-of-Order (OoO) processor with the best static configuration of frequency and resources. The combined technique outperforms either technique in isolation, with frequency-only and resource-only approaches achieving 1.43X and 1.61X forward progress improvements, respectively.

Energy harvesting has become a promising solution to power up Internet-of-Things (IoT) devices. In this scenario, the constrained power budget and frequent absence of ambient energy cause severe reliability issues and performance degradation on conventional CMOS computing circuits. Fortunately, the advent of nonvolatile processor (NVP) opens the possibility to compute continuously using an intermittent power supply. It is considered as a key component of the next generation IoT edge devices. In this work, we provide insights to the evolution of the NVP and its application in real world scenarios. Efforts on improving the performance of NVP and future research prospects are also discussed in this paper.

Batteryless IoT devices powered through energy harvesting face a fundamental imbalance between the potential volume of collected data and the amount of energy available for processing that data locally. However, many such devices perform similar operations across each new input record, which provides opportunities for mining the potential information in buffered historical data, at potentially lower effort, while processing new data rather than abandoning old inputs due to limited computational energy. We call this approach incidental computing, and highlight synergies between this approach and approximation techniques when deployed on a non-volatile processor platform (NVP). In addition to incidental computations, the backup and restore operations in an incidental NVP provide approximation opportunities and optimizations that are unique to NVPs.

Self-powered systems running on scavenged energy will be a key enabler for pervasive computing across the Internet of Things. The variability of input power in energy-harvesting systems limits the effectiveness of static optimizations aimed at maximizing the input-energy-to-computation ratio. We show that the resultant gap between available and exploitable energy is significant, and that energy storage optimizations alone do not significantly close the gap. We characterize these effects on a real, fabricated energy-harvesting system based on a nonvolatile processor. We introduce a unified energy-oriented approach to first optimize the number of backups, by more aggressively using the stored energy available when power failure occurs, and then optimize forward progress via improving the rate of input energy to computation via dynamic voltage and frequency scaling and self-learning techniques. We evaluate combining these schemes and show capture of up to 75.5% of all input energy toward processor computation, an average of 1.54 × increase over the best static “Forward Progress” baseline system. Notably, our energy-optimizing policy combinations simultaneously improve both the rate of forward progress and the rate of backup events (by up to 60.7% and 79.2% for RF power, respectively, and up to 231.2% and reduced to zero, respectively, for solar power). This contrasts with static frequency optimization approaches in which these two metrics are antagonistic.

Ferroelectric FETs (FEFETs) offer intriguing possibilities for the design of low power nonvolatile memories by virtue of their three-terminal structure coupled with the ability of the ferroelectric (FE) material to retain its polarization in the absence of an electric field. Utilizing the distinct features of FEFETs, we propose a 2-transistor (2T) FEFET-based nonvolatile memory with separate read and write paths. With proper co-design at the device, cell and array levels, the proposed design achieves non-destructive read and lower write power at iso-write speed compared to standard FERAM. In addition, the FEFET-based memory exhibits high distinguishability with six orders of magnitude difference in the read currents corresponding to the two states. Comparative analysis based on experimentally calibrated models shows significant improvement of access energy-delay. For example, at a fixed write time of 550ps, the write voltage and energy are 58.5% and 67.7% lower than FERAM, respectively. These benefits are achieved with 2.4 times the area overhead. Further exploration of the proposed FEFET memory in energy harvesting nonvolatile processors shows an average improvement of 27% in forward progress over FERAM.

The Internet-of-Things (IoT) has excited low-power design from device, circuits, to architectures levels. This paper talks about how recent emerging beyond-CMOS devices, such as tunnel field effect transistor (TFET), negative capacitance FET (NCFET), and phase transition devices (PTD), could extend the low-power design space to enable IoT applications with beyond-CMOS features.

Vertical tunnel field-effect transistors (VTFETs) have been extensively explored to overcome the scaling limits and to improve on-current ( I ON ) compared to standard lateral device structures for the future technologies. The benefits in terms of reduced footprint, high I ON and feasibility of fabrication have been demonstrated in several works. Among various VTFETs, the asymmetric heterojunction vertical tunnel FETs (HVTFETs) have emerged as one of the promising alternatives to standard transistors for low-voltage applications. However, while such device-level benefits without parasitics have been widely investigated, logic-gate design with parasitics and layout implications are not clear. In this article, we investigate and compare the layouts and parasitic capacitances and resistances of HVTFETs with FinFETs. Due to the vertical device structure of HVTFETs, a smaller footprint is observed compared to FinFETs in cells with small fan-in. However, for high fan-in cells, HVTFETs exhibit area overheads due to infeasibility of contact sharing in parallel and series transistors. These area overheads also lead to approximately 48% higher parasitic capacitance and resistance compared to FinFETs when the number of parallel and series connections increases. Further, in order to analyze the impact of parasitics, we modeled the analytical parasitics in SPICE. The models for both HVTFETs and FinFETs with parasitics were used to simulate a 15-stage inverter-based ring oscillator (RO) in order to compare the delay and energy. Our simulation results clearly show that HVTFETs exhibit less delay at a V DD < 0.45 V and higher energy efficiency for V DDs in the range of 0.3V--0.7V, albeit at the cost of 8% performance degradation.

With the advent of the era of trillion sensors, solar-powered sensor nodes are widely used as they do not require battery charging or replacement. However, the limited and intermittent solar energy supply seriously affects deadline miss rate (DMR) of tasks. Furthermore, traditional solar-powered sensor nodes also suffer from energy loss of battery charging and voltage conversion. Recently, a storage-less and converter-less power supply architecture has been proposed to achieve higher energy efficiency by removing the leaky energy storage and dc voltage conversion. Without energy storages, a node using inter-task scheduling is more sensitive to solar variations, which results in high DMRs. This paper proposes an intra-task scheduling scheme for the storage-less and converter-less solar-powered sensor nodes, whose features include power prediction based on classified solar profiles, a trigger mechanism to select scheduling points, an artificial neural network to calculate task priorities and a fine-grained task selection algorithm. Experimental results show that the proposed algorithm reduces DMR by up to 30% and improves energy utilization efficiency by 20% with trivial energy overheads.

Steep-slope heterojunction tunnel field-effect transistor (HTFET) devices promise new opportunities beyond CMOS in low-power high-performance communication applications. In this paper, the circuit design optimization of a low-power 14-bit 1-GS/s current-steering digital-to-analog converter (DAC) using 0.4/0.3 V mixed-supply HTFETs is explored. Based on the device characteristics comparison and circuit analysis, it is shown in this paper that HTFET endorses significant differences in both I -V and C -V due to the steep-slope tunneling mechanism and a nature of vertically fabricated structure. While such differences significantly affect the circuit design corners, this paper gives the device-circuit co-optimization for the HTFET DAC, reaching at higher current source output impedance, less nonlinear switching glitch distortions, and thus superior spectral performance over the Si-CMOS DAC. HTFET device variation is also discussed, and calibration techniques are adopted for the static matching accuracy.

In the near future, self-powered wearable sensor nodes are becoming as an emerging trend in healthcare applications. However, several design challenges exist before their wide usage, such as the limited and unstable power output as well as unpredictable power profiles. This paper shows an overview of candidate solutions and proposes that a cross-layer approach is needed.

Energy harvesting is gaining more and more attentions due to its characteristics of ultra-long operation time without maintenance. However, frequent unpredictable power failures from energy harvesters bring performance and reliability challenges to traditional processors. Nonvolatile processors are promising to solve such a problem due to their advantage of zero leakage and efficient backup and restore operations. To optimize the nonvolatile processor design, this paper proposes new metrics of nonvolatile processors to consider energy harvesting factors for the first time. Furthermore, we explore the nonvolatile processor design from circuit to system level. A prototype of energy harvesting nonvolatile processor is set up and experimental results show that the proposed performance metric meets the measured results by less than 6.27% average errors. Finally, the energy consumption of nonvolatile processor is analyzed under different benchmarks.

Energy harvesting has been widely investigated as a promising method of providing power for ultra-low-power applications. Such energy sources include solar energy, radio-frequency (RF) radiation, piezoelectricity, thermal gradients, etc. However, the power supplied by these sources is highly unreliable and dependent upon ambient environment factors. Hence, it is necessary to develop specialized systems that are tolerant to this power variation, and also capable of making forward progress on the computation tasks. The simulation platform in this paper is calibrated using measured results from a fabricated nonvolatile processor and used to explore the design space for a nonvolatile processor with different architectures, different input power sources, and policies for maximizing forward progress.

Energy harvesting systems without an energy storage device have to efficiently harness the fluctuating and weak power sources to ensure the maximum computational progress. While a simpler processor enables a higher turn-on potential with a weak source, a more powerful processor can utilize more energy that is harvested. Earlier work shows that different complexity levels of nonvolatile microarchitectures provide best fit for different power sources, and even different trails within same power source. In this work, we propose a dynamic nonvolatile microarchitecture by integrating all non-pipelined (NP), N-stage-pipeline (NSP), and Out of Order (OoO) cores together. Neural network machine learning algorithms are also integrated to dynamically adjust the microarchitecture to achieve the maximum forward progress. This integrated solution can achieve forward progress equal to 2.4× of the baseline NP architecture (1.82× of an OoO core).

A 14-bit 1.0-GS/s current-steering digital-to-analog converter (DAC) was designed in a 65-nm CMOS process. For such current-steering DACs with a high sampling rate, the code-dependent load variations and switching glitches are a main bottleneck which limits the spurious-free dynamic range (SFDR). Dynamic element matching (DEM) has been an effective solution to randomize these glitches for a higher SFDR and also to reduce the matching requirement of the current cells for an area-efficient design which also improves the SFDR with reduced parasitic capacitance. An effective method named TRI-DEMRZ is proposed in this paper, consisting of time-relaxed interleaving, DEM and return-to-zero encoding. We also apply TRI-DEMRZ in synergy with complementary switched current sources (CSCS) to design the DAC for the purpose of a small die size and enhanced SFDR performance. Post-layout simulations show >80 dB SFDR up to the Nyquist. This DAC has a mixed 1.2 V / 2.5 V power supply and an active area of 0.48 mm2.

The existence of domains where traditional CMOS processors are inefficient has been well-documented in the current literature. In particular, the inefficiency of general purpose CMOS designs operating at very low supply voltages is well-known, and steep sub-threshold slope technologies, such as Tunneling Field Effect Transistors (TFETs), have been demonstrated as a viable alternative for the low-voltage operation domain. However, restricting the design space of steep slope technology-based processors to near-threshold or sub-threshold general purpose processors does the technology a disservice.

Ultra-low power circuit design techniques have enabled rapid progress in biosignal acquisition. The design of a multi-channel biosignal recording system is a challenging task, considering the low amplitude of neural signals and limited power budget for an implantable system. The front-end low-noise amplifier is a critical component with respect to overall power consumption and noise of such system. In this paper, we present a new design of III-V Heterojunction TFET (HTFET)-based neural amplifier employing a telescopic operational transconductance amplifier (OTA) for multi-channel neural spike recording. Exploiting the unique device characteristics of HTFETs, our simulation shows that the proposed amplifier exhibits a midband gain of 39 dB, a gain bandwidth of 12 Hz-2.1 kHz, and an input-referred noise of 6.27 μVrms, consuming 5 nW of power at a 0.5 V supply voltage. Using the proposed HTFET amplifier, a noise efficiency factor (NEF) of 0.64 is achieved, which is significantly lower than the CMOS-based theoretical limit. Design tradeoffs related to gain, power and noise requirements are investigated, based on a comprehensive electrical noise model of HTFET and compared with the baseline Si FinFET design.

Current mode logic (CML) circuits have been widely used in high-speed data transceivers. The lower-voltage-swing makes the switching speed of CML much higher than the static logic can achieve, so it is worthy to adopt the CML circuits at the cost of higher power consumption in the high-speed applications. In order to obtain a better power efficiency (Frequency/power) in CML, it is critical to reduce the power consumption while maintaining the high operating frequency. This paper proposes an alternative approach by building the CML circuits with tunneling-field-effect-transistor (Tunnel FETs or TFETs) to achieve a high-throughput, low-voltage interface circuit design. By taking advantage of its steep subthreshold slope (less than 60 mV/dec), TFET exhibits the same on/off current ratio at the input voltage swing interval much lower than that of the MOSFETs, which enables the supply voltage scaling in CML circuits. For a design target data-rate (20 Gbps for multiplexer and 50 Gbps for buffer), our simulations show that the proposed TFET CML circuits are able to reduce the supply voltage from 0.6 V in conventional Si FinFET CML circuits to as low as 0.3 V while using the same constant tail current. As a result, a power consumption reduction of approximately 50% is achieved by the proposed TFET CML circuits, making the TFET CML approach a promising candidate for future low-power, high-performance applications.