A method for experimentally selecting proper silicon-on-insulator MOSFET models for circuit simulation is described, verified, and demonstrated. The selection criteria are derived from steady-state current-voltage characteristics predicted by thin-film and (semi-)bulk models. The necessity for proper model selection is emphasized by revealing significant simulation errors that result from seemingly valid but actually empirical models.>

A five-terminal, charge-based model for the thin-film silicon-on-insulator (SOI) MOSFET is implemented in SPICE2, thereby enabling, for the first time, proper simulation and CAD of SOI MOS integrated circuits in which the unique floating-body and back-gate-bias effects can be significant. The implementation is achieved, without having to rewrite the circuit simulator, by developing a general method for incorporating new charge-based device models into SPICE2 that utilizes user-defined controlled sources (UDCS's). The utility and computing efficiency of the SOI MOSFET model implementation are demonstrated by simulating several representative SOI MOS circuits.