This paper proposes TEASE (Technology Exploration and Analysis for SoC-level Evaluation), a framework to systematically analyze and evaluate system design in finFET-based technology node. The proposed framework combines both lithography and electrical constraints of a particular technology node to optimize the standard cell library performance. Growing complexity of logic design at nodes below 20nm causes to adopt a design style that can embrace the simplicity required to enable manufacturing, along with a process technology that can be finely tuned to the desired performance constraints. Additionally, the introduction of finFET based devices poses a new challenge for the designers to come up with an efficient standard cell template. The proposed framework can be used to detect the technology constraints that act as the bottleneck for the enablement of design at these advanced nodes. Results presented in this paper show by optimizing these bottlenecks we can improve the performance of a standard cell library significantly. Furthermore, adapting to such an analysis framework at an early stage of technology development helps to take the design constraints into the decision loop for realization of technology research into real products.

Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.

Anticipating silicon response in the presence or process variability is essential to avoid costly silicon re-spins. EDA industry is trying to provide the right set of tools to designers for statistical characterization of SRAM and logic. Yet design teams (also in foundries) are still using classical corner based characterization approaches. On the one hand the EDA industry fails to meet the demands on the appropriate functionality of the tools. On the other hand, design teams are not yet fully aware of the trade-offs involved when designing under extreme process variability. This paper summarizes the challenges for statistical characterization of SRAM and logic. It describes the key features of a set of prototype tools addressing that required functionality together with their application to a number of case studies aiming at enhancing yield at product level.

The TRAMS (Terascale Reliable Adaptive MEMORY Systems) project addresses in an evolutionary way the ultimate CMOS scaling technologies and paves the way for revolutionary, most promising beyond-CMOS technologies. In this abstract we show the significant variability levels of future 18 and 13nm device bulk-CMOS technologies as well as its dramatic effect on the yield of memory cells, and what kind of circuit solution would be required to maintain the current yield level. Later, we discuss the impact of errors at the system level, and different approaches at system level to adapt the heterogeneous systems to user's requirements.

We present a new method and its implementation that enables design-phase assessment of statistical performance metrics of semiconductor memories under random local and global process variations. Engineers use the tool to reduce design margins and to maximize parametric yield. Results on industry grade 45nm SRAM designs show that this holistic approach is significantly more accurate than the alternatives based on global corners or critical path netlist, which can lead to unexpected yield loss.

This paper presents an automated technique to perform SRAM wide statistical analysis in presence of process variability. The technique is implemented in a prototype tool and is demonstrated on several 45 and 32nm industry-grade SRAM vehicles. Selected case studies show how this approach successfully captures non-trivial statistical interactions between the cells and the periphery, which remain uncovered when only using statistical electrical simulations of the critical path or applying a digital corner approach. The presented tool provides the designer with valuable information on what performance metrics to expect, if manufactured. Since this feedback takes place in the design phase, a significant reduction in development time and cost can be achieved.

An increasing fraction of dynamic power consumption can be attributed to switched interconnect capacitances. Non-uniform wire spacing depending on activity had shown promising power reductions for on-chip buses. In this paper, a new and fast routing optimization methodology based on non-uniform spacing is proposed for entire circuits. No area investment is required, since whitespace remaining after detailed routing is exploited. The proposed methodology has been implemented and tapped into an industry-proven design flow. Wire power reductions of up to 9.55% for modern multiprocessor benchmarks with tight area constraints are demonstrated, twice as much as approaches that do not take switching activities into account. Timing is not adversely affected, and the yield limit is slightly improved.

This paper suggests a methodology to decrease the power of a static CMOS standard cell design at layout level by focusing on switched capacitance. The term switched is the key: if a capacitance is not switched often, it may be high. If it is frequently switched, it should be minimized in order to reduce power consumption. This can be done by an algorithm based on forces that automatically optimizes the position and length of every single wire segment in a routed design. The forces are proportional to the toggle activities derived from a gate level simulation. The novelty is that this allows us to iteratively find a new topology for the wire segments. Our algorithm takes as input an already given, grid routed layout.