Songyuan Liu

dblp:11/10216 · DBLP profile ↗
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4ranked-venue papers
0as first author
4since 2021 · last 2025
—ORCID · conflict

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Systems, architecture and hardware · 4 · 4 since 2021Artificial intelligence and machine learning · 1 · 1 since 2021
YearPublicationVenuePosition
2025 Planning and Control for Active Morphing Tensegrity Aerial Vehicles in Confined Spaces
abstract
Morphing quadrotors are capable of adapting to constrained environments through geometric reconfiguration. However, existing systems are limited by mechanical complexity and rigid links, which affect both safety and performance in such environments. In this paper, we propose a strut-actuated tensegrity aerial vehicle that integrates shape adaptation with collision resilience. By incorporating deformable struts and a cable network, our vehicle enables real-time morphological adjustments during flight while maintaining stability. We present a hierarchical planning framework that ensures the entire vehicle remains confined within an icosahedral space, thereby guaranteeing full-body safety. An on-manifold Model Predictive Controller (MPC) is employed to track these optimized trajectories and compensate for inertia shifts during shape deformation. Simulation results validate the effectiveness of the proposed framework, demonstrating its capability to navigate in restricted scenarios.
Siyuan Hao, Zichen Tao, Yun Gui, Songyuan Liu, Jiaxu Shi, Qingkai Yang
IROS4
2023 TL-nvSRAM-CIM: Ultra-High-Density Three-Level ReRAM-Assisted Computing-in-nvSRAM with DC-Power Free Restore and Ternary MAC Operations
abstract
Accommodating all the weights on-chip for large-scale NNs remains a great challenge for SRAM based computing-in-memory (SRAM-CIM) with limited on-chip capacity. Previous non-volatile SRAM-CIM (nvSRAM-CIM) addresses this issue by integrating high-density single-level ReRAMs on the top of high-efficiency SRAM-CIM for weight storage to eliminate the off-chip memory access. However, previous SL-nvSRAM-CIM suffers from poor scalability for an increased number of SL-ReRAMs and limited computing efficiency. To overcome these challenges, this work proposes an ultra-high-density three-level ReRAMs-assisted computing-in-nonvolatile-SRAM (TL-nvSRAM-CIM) scheme for large NN models. The clustered n-selector-n-ReRAM (cluster-nSnRs) is employed for reliable weight-restore with eliminated DC power. Furthermore, a ternary SRAM-CIM mechanism with differential computing scheme is proposed for energy-efficient ternary MAC operations while preserving high NN accuracy. The proposed TL-nvSRAM-CIM achieves 7.8x higher storage density, compared with the state-of-art works. Moreover, TL-nvSRAM-CIM shows up to 2.9x and 2.0x enhanced energy efficiency, respectively, compared to the baseline designs of SRAM-CIM and ReRAM-CIM, respectively.
Dengfeng Wang, Liukai Xu, Songyuan Liu, Zhi Li 0058, Weifeng He, Xueqing Li 0002, Yanan Sun 0003
ICCAD3
2023 CREAM: Computing in ReRAM-Assisted Energy- and Area-Efficient SRAM for Reliable Neural Network Acceleration
abstract
SRAM-based computing-in-memory (CIM) has been widely explored to accelerate neural networks (NNs). However, it is challenging to store all weights of many modern NNs due to limited on-chip SRAM capacity. This bottleneck induces a large amount of off-chip DRAM accesses and impedes the improvement of performance and energy efficiency. This paper proposes a new approach of computing in resistive random-access memory (ReRAM)-assisted energy- and area-efficient SRAM (CREAM) for accelerating large-scale NNs while eliminating the DRAM access. The NN weights are all stored in high-density on-chip ReRAMs and restored to the proposed non-volatile SRAM (nvSRAM) CIM cells with array-level parallelism. Furthermore, to deal with the influence of ReRAM and CMOS variations, a novel layer-wise and bit-wise weight-configuration search algorithm is proposed by leveraging different sensitivity of each layer in NN models. A data-aware weight-mapping method is also presented to efficiently map NN models to ReRAMs in CREAM for high computation parallelism. The experiment results show$10.3\times $weight storage density over the standard 6T SRAM array. Evaluations of ResNet-18 and VGG-9 on CIFAR-10/CIFAR-100 datasets show up to$3.47\times $and$1.70\times $energy efficiency over two baseline designs of SRAM-CIM and ReRAM-CIM, respectively, in addition to 15.6% higher accuracy than ReRAM-CIM under device variations.
Yanan Sun 0003, Dengfeng Wang, Liukai Xu, Zhi Li 0058, Songyuan Liu, Weifeng He, Yongpan Liu, Huazhong Yang, Xueqing Li 0002
IEEE Trans. Circuits Syst. I Regul. Pap.6
2022 CREAM: computing in ReRAM-assisted energy and area-efficient SRAM for neural network acceleration
abstract
Computing-in-memory has been widely explored to accelerate DNN. However, most existing CIM cannot store all NN weights due to limited SRAM capacity for edge AI devices, inducing a large amount off-chip DRAM access. In this paper, a new computing in ReRAM-assisted energy and area-efficient SRAM (CREAM) is proposed for implementing large-scale NNs while eliminating off-chip DRAM access. The weights of DNN are all stored in the high-dense on-chip ReRAM devices and restored to the proposed nvSRAM-CIM cells with array-level parallelism. A data-aware weight-mapping method is also proposed to enhance the CIM performance while fully exploiting the hardware utilization. Experiment results show that the proposed CREAM scheme enhances the storage density by up to 7.94x compared to the traditional SRAM arrays. The energy-efficiency of proposed CREAM is also enhanced by 2.14x and 1.99x, compared to the traditional SRAM-CIM with off-chip DRAM access and ReRAM-CIM circuits, respectively.
Liukai Xu, Songyuan Liu, Zhi Li 0058, Dengfeng Wang, Yanan Sun 0003, Xueqing Li 0002, Weifeng He
DAC2