DRAMs are used as the main memory in most computing systems today. Studies show that DRAMs contribute to a significant part of overall system power consumption. One of the main challenges in low-power DRAM design is the inevitable refresh process. Due to process variation, memory cells exhibit retention time variations. Current DRAMs use a single refresh period determined by the cell with the largest leakage. Since prolonging refresh intervals introduces retention errors, a set of previous works adopt conventional error-correcting code (ECC) to correct retention errors. However, these approaches introduce significant area and energy overheads. In this article, we propose a novel error correction framework for retention errors in DRAMs, called SECRET (selective error correction for refresh energy reduction). The key observations we make are that retention errors are hard errors rather than soft errors, and only few DRAM cells have large leakage. Therefore, instead of equipping error correction capability for all memory cells as existing ECC schemes, we only allocate error correction information to leaky cells under a refresh interval. Our SECRET framework contains two parts: an offline phase to identify memory cells with retention errors given a target error rate and a low-overhead error correction mechanism. The experimental results show that among all test cases performed, the proposed SECRET framework can reduce refresh power by 87.2% and overall DRAM power up to 18.57% with negligible area and performance overheads.

Emerging non-volatile memory (NVM) technologies have gained a lot of attention recently. The byte-addressability and high density of NVM enable computer architects to build large-scale main memory systems. NVM has also been shown to be a promising alternative to conventional persistent store. With NVM, programmers can persistently retain in-memory data structures without writing them to disk. Therefore, one can envision that in the future, NVM will play the role of both working memory and persistent store at the same time.

DRAMs are used as the main memory in most computing systems today. Studies show that DRAMs contribute to a significant part of overall system power consumption. Therefore, one of the main challenges in low-power DRAM design is the inevitable refresh process. Due to process variation, memory cells exhibit retention time variations. Current DRAMs use a single worst-case refresh period. Prolonging refresh intervals introduces retention errors. Previous works adopt conventional ECC (Error Correcting Code) to correct retention errors. These approaches introduce significant area and energy overheads. In this paper, we propose a novel error correction framework for retention errors in DRAMs, called SECRET (Selective Error Correction for Refresh Energy reducTion). The key observation we make is that retention errors can be treated as hard errors rather than soft errors, and only few DRAM cells have large leakage. Therefore, instead of equipping error correction capability in all memory cells as existing ECC schemes, we only allocate error correction information to leaky cells under a refresh interval. Our SECRET framework contains two parts, an off-line phase to identify memory cells with retention errors given a target error rate, and a low-overhead error correction mechanism. The experimental results show that the proposed SECRET framework can reduce refresh power by 87.2%, and overall DRAM power by 18.57% with negligible area and performance overheads.