Complementary FET (CFET) is a promising device architecture that proceeds the CMOS scaling during the post-nanosheet device era. Among several CFET variants, Double-Row (DR) CFET further enables 15% track height scaling on standard cells, by sharing a middle row of vias, while sustaining an optimized Middle-Of-Line (MOL) process complexity. In this study, half-height double-row (hDR) CFET is proposed as a highly practical and impactful design style to overcome the cell and block level limitations of DR CFET architecture. First, hDR CFET introduces a high flexibility on standard cell layout design with significant area optimization. Secondly, hDR cell insertion in the backend physical design flow further optimizes the cell placement, and recovers block level area scaling to match the cell height scaling. Results on A7 CFET technology library show area reduction up to 50% on standard cell layouts. Moreover, block level PnR results after enabling only 6 types of hDR cells in standard cell library show 10% of area scaling on ARM Cortex-M0 32-bit core at 90% utilization, proving the strength of the concept. Finally, 14% of block level area scaling is further projected for an enriched standard cell library with an extended set of hDR cells.

It is envisaged that spintronic logic devices will ultimately be utilized in hybrid CMOS-spintronic systems where signal interconversion between magnetic and electrical domains via transducers takes place. This underscores the vital role of transducers in influencing the overall performance of such hybrid systems. This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL (École Polytechnique Fédérale de Lausanne) combinational benchmark sets, synthesize them in 7 nm CMOS and in MTJ transducer based spintronic technologies, and compare the two implementation methods in terms of Energy-Delay-Product (EDP). To fully utilize the technologies’ potential, CMOS and spintronic implementations are built upon standard Boolean and Majority Gates, respectively. For the spintronic circuits, we assumed that domain conversion (electric/magnetic to magnetic/electric) is performed by means of MTJs and the computation is accomplished by domain wall (DW)-based majority gates, and considered two EDP estimation scenarios: (i) Uniform Benchmarking, which ignores the circuit’s internal structure and only includes domain transducers’ power and delay contributions into the calculations, and (ii) Majority-Inverter-Graph Benchmarking, which also embeds the circuit structure, the associated critical path delay and energy consumption by DW propagation. Our results indicate that, for the uniform case, the spintronic route is better suited for the implementation of complex circuits with few inputs and outputs. On the other hand, when the circuit structure is also considered via majority and inverter synthesis, our analysis clearly indicates that in order to match and eventually outperform CMOS performance, MTJ transducers’ efficiency has to be improved by 3-4 orders of magnitude. While it is clear that for the time being the MTJ-based-spintronic way cannot compete with CMOS, further technological transducer developments may tip the balance, which, when combined with information non-volatility, may make spintronic implementation for certain applications that require a large number of calculations and have a rather limited amount of interaction with the environment.

The back-side metal layers exhibit lower parasitics compared to the front-side layers in advanced technologies, making them suitable for clock-net distribution. In this study, we explore the advantages of using back-side metal layers for clock routing, which is shared with a power delivery network. Our Graph Neural Network (GNN) based framework, effectively distributes the clock-tree between the front and back sides. We address the back-side clock nets' creation by incorporating back-side buffers. Our results demonstrate better clock and full-chip metrics represented by an increase of up to 13% in the effective frequency with equivalent power consumption, using 3 nm technology.

Novel devices that optimize their structure in a three-dimensional fashion and offer significant area gains by reducing standard cell track height are adopted to scale silicon technologies beyond the 5nm node. Such a device is the Complementary FET (CFET), which consists of an n-type channel stacked vertically over a p-type channel. In this paper we review the significant benefits of CFET devices as well as the challenges that arise with their use. More specifically, we focus on the standard cell design challenges as well as the physical implementation ones. We show that to fully exploit the area benefits of the CFET devices, one must carefully select the metal stack used for the physical implementation of a large design.

In this article, we provide a comprehensive evaluation of width modulation capabilities of both nanosheet (NS) and forksheet (FS) devices, going from device level to a block level implementation. The main innovation introduced by the FS consists of a dielectric wall added between the p- and nMOS transistors. Leveraging this feature, FS shows approximately the same current behavior as NS, considered a state-of-the-art reference, but reduced parasitic capacitance thanks to its fewer but wider stacked sheets. At block level, an area reduction up to 12% is observed with FS, alongside a 13% power reduction and 10% frequency increase. Following the device comparison, the potential of sheet width modulation as additional power, performance, and area (PPA) optimization technique during synthesis and place and route (PNR) is investigated. A description of the specific steps required to enable this knob in a conventional electronic design automation (EDA) framework is provided. As demonstrated by the obtained experimental results, the same frequency of the single-width implementation can be achieved using mixed libraries with lower power consumption (13% and 16% for NS and FS, respectively), leading to improved energy efficiency. Furthermore, it is shown how designs implemented using FS benefit more from this type of optimization than the ones using NS, with a 12%–15% energy reduction compared to the 8.5%–14% obtained with NS.

Emerging technologies such as plasmonics and photonics are promising alternatives to CMOS for high throughput applications, thanks to their waveguide's low power consumption and high speed of computation. Besides these qualities, these novel technologies also implement logic functionalities uncommon to traditional technologies that can be beneficial to existing CMOS architectures. In this work, we study how plasmonic-based devices can complement CMOS technology to achieve a more efficient implementation of multiplier architectures, which are the core of state-of-the-art data- and signal-processing circuits. A critical part of modern multipliers is the partial-product reduction step, used to reduce the partial product tree into a 2-input addition. In CMOS technology, this step is achieved by using compact and fast counters. On the other hand, the proposed plasmonic cells naturally implement counters of 3-, 9- and 27-inputs within a few logic levels at ultra-high speed. Thus, we present novel multiplier architectures, which take advantage of large plasmonic-based counters to reduce the number of cells and logic levels in the partial product reduction step of the multiplication. Our experimental results show that 3 levels and 30 counters are needed when 27-input cells are used. On the other side, 6 levels and 72 counters are employed with 9-input cells. Finally, we present various 16 × 16 multiplier implementations mixing 9- and 27-input cells, focusing on the trade-off in the number of counters, levels, and area of each architecture.

The majority function $\langle xyz\rangle$ evaluates to true, if at least two of its Boolean inputs evaluate to true. The majority function has frequently been studied as a central primitive in logic synthesis applications for many decades. Knuth refers to the majority function in the last volume of his seminal The Art of Computer Programming as “probably the most important ternary operation in the entire universe.” Majority logic sythesis has recently regained signficant interest in the design automation community due to nanoemerging technologies which operate based on the majority function. In addition, majority logic synthesis has successfully been employed in CMOS-based applications such as standard cell or FPGA mapping. This tutorial gives a broad introduction into the field of majority logic synthesis. It will review fundamental results and describe recent contributions from theory, practice, and applications.

The performance of some emerging nanotechnologies benefits from wave pipelining. The design of such circuits requires new models and algorithms. Thus we show how Majority-Inverter Graphs (MIG) can be used for this purpose and we extend the related optimization algorithms. The resulting designs have increased throughput, something that has traditionally been a weak point for the majority of non-charge-based technologies. We benchmark the algorithm on MIG netlists with three different technologies, Spin Wave Devices (SWD), Quantum-dot Cellular Automata (QCA), and NanoMagnetic Logic (NML). We find that the wave pipelined version of the netlists have an improvement in throughput over power of 23×, 13×, and 5× for SWD, QCA, and NML, respectively. In terms of throughput over area ratio, the improvement is 5×, 8×, and 3×, respectively.

Spin Wave Devices (SWDs) are promising beyond-CMOS candidates. Unlike traditional charge-based technologies, SWDs use spin as information carrier that propagates in waves. In this scenario, the logic primitive for computation is the majority gate. The majority gate has a greater expressive power than standard NAND/NOR gates, allowing SWD circuits to be more compact than CMOS, already at the logic level. Also, because there is not charge carrier transport, SWDs are estimated to have ultra-low power consumption. However, in order to exploit this opportunity, a native majority synthesis methodology is needed to fit the SWD technology needs. In this paper, we employ Majority-Inverter Graphs (MIGs) to naturally represent and synthesize SWD circuits. Thanks to the correspondence between the functionality of SWD primitive gates and MIG elements, MIG optimization intrinsically aims at minimum cost SWD implementations. Experimental results over MCNC benchmarks validate the efficiency of MIGs in SWD synthesis. As compared to traditional AND-Inverter Graph (AIG) synthesis, MIGs generate, on average, SWD circuits with 1.30X smaller area-delay-power product (ADP), improving their delay performance by 18%.

Polarity-controllable transistors have emerged in the last few years as an adequate successor of current CMOS FinFETs. Due to the additional polarity terminal, novel physical design techniques are required. We present a novel grid-based power routing scheme able to mitigate the polarity terminal impact. The logic cells are organized in regular arrangements and easily configured using the novel power routing scheme. The impact of the placement and routing techniques used is gauged in terms of routing metal distribution, speed and area performance. Benchmark circuits are synthesized, placed and routed using commercial tools and performances are extracted. Post place and route results show 28% faster circuits compared to 22nm FinFET regular layout-based designs.