In-memory error correction code (ECC) is a promising technique to improve the yield and reliability of high density memory design. However, the use of in-memory ECC poses a new problem to memory repair analysis algorithm, which has not been explored before. This article first makes a quantitative evaluation and demonstrates that the straightforward algorithms for memory with redundancy and in-memory ECC have serious deficiency on either repair rate or repair analysis speed. Accordingly, an optimal repair analysis algorithm that leverages preprocessing/filter algorithms, hybrid search tree, and depth-first search strategy is proposed to achieve low computational complexity and optimal repair rate in the meantime. In addition, a heuristic repair analysis algorithm that uses a greedy strategy is proposed to efficiently find repair solutions. Experimental results demonstrate that the proposed optimal repair analysis algorithm can achieve optimal repair rate and increase the repair analysis speed by up to 105×105× compared with the straightforward exhaustive search algorithm. The proposed heuristic repair analysis algorithm is approximately 28 percent faster than the proposed optimal algorithm, at the expense of 5.8 percent repair rate loss.

Although the emerging 3D DRAM products can significantly improve the computing system performance, the relatively high cost is one of the most critical issues that prevent their wide real-life adoption. Intuitively, a strong memory fault tolerance can be leveraged to reduce the fabrication cost of DRAM dies, and the total cost will reduce if the fabrication cost saving can off-set the cost overhead of memory fault tolerance. Nevertheless, such a simple concept can be a practically viable option only for 3D DRAM because: (1) The stacked logic die can solely implement memory fault tolerance inside 3D DRAM chips, obviating any changes on the host CPUs and CPU-DRAM interfaces. (2) With the total ownership of both the logic die and DRAM dies inside 3D DRAM chips, DRAM manufacturers can fully exploit the potential to truly minimize the 3D DRAM bit cost. Following this intuition, we developed a 3D DRAM fault tolerance design strategy. It can achieve a very strong tolerance to weak DRAM cells at very small redundancy and latency overhead. The key is to cohesively leverage the detectability of weak cells and runtime configurability of error correction code (ECC) decoding. In addition, this design strategy can gracefully embrace the inaccuracy of weak cell detection (e.g., weak cell miss-detection and false-detection). We carried out thorough mathematical analysis, and the results show that, under the redundancy overhead of 1:8 (same as today's ECC DIMM), this design strategy can tolerate the weak cell rate of as high as 10-4 and 6x10-5 if 100 and 90 percent of all the weak cells are known in prior. Using Micron's hybrid memory cube (HMC) 3D DRAM chips as the test vehicle, we evaluated the implementation cost and the results show that it only consumes less than 0.4 mm2 (45 nm node) on the logic die. Using CPU and DRAM simulators, we further carried out simulations over a variety of computing benchmarks and the results show that this design solution only incurs less than 2 percent performance degradation on average.

A multilevel per cell (MLC) technique significantly improves the storage density, but also poses serious data integrity challenge for NAND flash memory. This consequently makes the low-density parity-check (LDPC) code and the soft-decision memory sensing become indispensable in the next-generation flash-based solid-state storage devices. However, the use of LDPC codes inevitably increases memory read latency and, hence, degrades speed performance. Motivated by the observation of intracell unbalanced bit error probability and data dependence in the MLC NAND flash memory, this paper proposes two techniques, i.e., intracell data placement interleaving and intracell data dependence aware LDPC decoding, to efficiently improve the LDPC decoding throughput and energy efficiency for the MLC NAND flash-based storage in a mobile device. Experimental results show that, by exploiting the intracell bit-error characteristics, the proposed techniques together can improve the LDPC decoding throughput by up to 84.6% and reduce the energy consumption by up to 33.2% while only incurring less than 0.2% silicon area overhead.

Three dimensional (3D) integration is promising to provide dramatic performance and energy efficiency improvement to 3D logic-DRAM integrated computing system, but also poses significant challenge to the yield and reliability. By leveraging logic-DRAM co-design, this paper exploits the cost efficient approach to repair 3D integration induced defective cells in stacked DRAM with unused spares. In particular, we propose to make the DRAM array open its redundancy to off-chip access by small architecture modification, and further design the defective address comparison and redundant address remapping with very efficient architecture on logic die to achieve the equivalent memory repair. Simulation results have demonstrated that the proposed repair technique for DRAM after die stacking is able to significantly alleviate the yield loss, with very low area and power consumption overhead and negligible timing penalty.

Multi-level per cell (MLC) technique significantly improves storage density, but also poses new challenge to data integrity in NAND flash memory. Therefore, low-density parity-check (LDPC) code and soft-decision memory sensing have become indispensable in future NAND flash-based solid state drive design. However, these more powerful technologies inevitably increase the memory read latency and hence degrade the decoding throughput. Motivated by intra-cell unbalanced bit error probability and data dependency in MLC NAND flash memory, this paper proposes two techniques, i.e. intra-cell data placement interleaving and intra-cell data dependency aware min-sum decoding, to effectively improve the throughput of LDPC decoding. Experimental results show that, the proposed techniques used in an integrated way can improve the LDPC decoding throughput by up to 85% when the MLC NAND flash chip is heavily cycled, compared with conventional design practice.