Demo Data from EDBT 2026 / reviewers in the wild / expert
Weihai Bu
dblp:153/3555
· DBLP profile ↗
2ranked-venue papers
0as first author
1since 2021 · last 2026
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 67% Electronic design automation · 33% |
Topics — the 3 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Electronic design automation
technology computer-aided design |
1.0 | 1 | 2026 | Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform · Sci. China Inf. Sci. 2026 |
Integrated circuit design
variation-aware design |
1.0 | 1 | 2026 | Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor device modeling
transistor modeling |
0.0 | 1 | 2001 | Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile · Sci. China Ser. F Inf. Sci. 2001 |
Methods — techniques the papers use, named apart from their topics
300 mm foundry platform · 1.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform
Kaifeng Wang, Ye Ren, Yongqin Wu, Weihai Bu, Ru Huang 0001 |
Sci. China Inf. Sci. | 5 |
| 2001 | Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile
Ru Huang 0001, Weihai Bu, Xing Zhang 0002, Yangyuan Wang |
Sci. China Ser. F Inf. Sci. | 2 |