EDBT 2026 Demo / reviewers in the wild / expert
Pengying Chang
dblp:154/1083
· DBLP profile ↗
3ranked-venue papers
2as first author
2since 2021 · last 2023
0000-0002-0390-2638ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3 · 2 first-author · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
3 papers |
Integrated circuit design · 80% Hardware reliability and fault tolerance · 8% Electronic design automation · 6% |
Topics — the 7 heaviest of 7, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › emerging device technologies
ferroelectric devices |
1.2 | 2 | 2023 | Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations · Sci. China Inf. Sci. 2023 Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation · Sci. China Inf. Sci. 2021 |
Integrated circuit design › semiconductor device modeling
drift-diffusion model |
0.4 | 1 | 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime · Sci. China Inf. Sci. 2019 |
Integrated circuit design
semiconductor device modeling |
0.4 | 1 | 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime · Sci. China Inf. Sci. 2019 |
Hardware reliability and fault tolerance › process variation
device variation |
0.2 | 1 | 2023 | Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations · Sci. China Inf. Sci. 2023 |
Electronic design automation › technology computer-aided design
device simulation |
0.1 | 1 | 2021 | Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation · Sci. China Inf. Sci. 2021 |
High-performance computing › scientific computing systems
phase field simulation |
0.1 | 1 | 2021 | Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation · Sci. China Inf. Sci. 2021 |
Integrated circuit design › semiconductor devices › field-effect transistor
MOSFET |
0.1 | 1 | 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime · Sci. China Inf. Sci. 2019 |
Methods — techniques the papers use, named apart from their topics
phase field simulation · 1.2quasi-ballistic transport · 0.4drift-diffusion calibration · 0.4
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2023 | Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations
Pengying Chang, Mengqi Fan, Gang Du, Yiyang Xie |
Sci. China Inf. Sci. | 1 |
| 2021 | Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation
Pengying Chang, Gang Du |
Sci. China Inf. Sci. | 1 |
| 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime
Shaoyan Di, Pengying Chang, Tiao Lu, Gang Du |
Sci. China Inf. Sci. | 3 |