As the integration level of integrated circuits continues to increase and the feature size of nanoscale chips continues to shrink, the possibility of triple-node-upsets (TNUs) occurring in circuits increases significantly. This paper proposes a latch, namely CLTNUSL, which offers stable resilience against TNUs in radiative environments while achieving a good balance between reliability and overhead. Unlike the conventional latches consisting of multi-input C-elements, the proposed CLTNUSL latch mainly consists of 16 interlocked dual-input inverters. Due to the small number of transistors, CLTNUSL achieves low area overhead. Due to the use of high-speed paths and clock gating techniques, CLTNUSL achieves low latency and low power consumption. Simulation results demonstrate CLTNUSL’s full recovery from TNU in all scenarios. Compared with the conventional TNU-hardened latch, CLTNUSL achieves minimal latency, power consumption, area overhead, and the delay-power-area product (DPAP). CLTNUSL reduces delay by 13.22%, power by 52.74%, area by 40.90%, and DPAP by 71.44% on average, compared with state-of-the-art latches. Process-Voltage-Temperature (PVT) and Monte Carlo simulation results show that the CLTNUSL latch is less sensitive to temperature, voltage and process variations compared with conventional TNU self-recovery latches.

Integrated circuits are increasingly sensitive to radiation-induced multi-node upset in advanced CMOS technology. This paper proposes a novel low-power quadruple-node-upset recovery latch (QNU-CPN), which is based on the feedback interconnection of twenty-two input-split C-elements with P-input and N-input (CPNs) to achieve high reliability. Post-layout simulation results for 45nm CMOS by HSPICE technology show that the proposed QNU-CPN latch exhibits a reduction in power consumption by an average of 56.45%, a reduction in power-delay product (PDP) by an average of 56.92%, a reduction in area-power-delay product (APDP) by an average of 58.59%, and a reduction in setup time by an average of 11.11%, in comparison to four other existing quadruple-node upset recovery latch (LDAVPM, QRHIL, QRHIL-LC, MURLAV). Furthermore, this paper proposes the recovery rate calculation algorithm method that can calculate the recovery rate based on the configuration of multiple fault-tolerant components.

As the interaction layer between electronic devices and the external environment, ensuring the proper functioning of analog circuits (ACs) has garnered extensive attention from both academia and industry. Compound faults, a common type of fault in ACs, are challenging to handle with existing data-driven diagnostic approaches due to the difficulties in data collection. To address this issue, this paper proposes a zero-shot diagnostic framework based on mechanism compensation-digital twin, aiming to tackle the diagnostic challenge of compound faults in ACs under data scarcity conditions. Firstly, we introduce a mechanism compensation-digital twin-based data generation scheme (MC-DT). This scheme generates standard fault data for the target circuit through the constructed twin model. Building on this, we further propose a mechanism-fused sample generation scheme to compensate for the limitations inherent in twin model modeling. By employing the MC-DT, a multi-source homogeneous domain dataset can be generated for the target circuit. Secondly, to effectively bridge the distribution gap between the generated data and real-world data, we employ a multi-source domain generalization network to learn domain invariant representations from the generated data, thereby enhancing the model's performance in practical application scenarios. Through case studies conducted on existing ACs using a constructed test platform, the experimental results demonstrate that the proposed scheme achieves accuracies of 71.63%, 77.49%, and 74.64% in three different zero-shot diagnostic tasks, respectively, exhibiting significant advantages over advanced zero-shot methods.

Soft errors and power dissipation emerge as critical challenges in developing high-reliability and cost-sensitive embedded systems. To address these issues, the magnetic tunnel junction (MTJ) is considered a promising solution due to its nonvolatility and its compatibility with traditional CMOS manufacturing processes. In this work, we propose a novel nonvolatile (NV) latch consisting of inverters and MTJs, namely, NVLIM, which provides nonvolatility and robust partial tolerance against triple-node-upsets (TNUs) at low cost. NVLIM integrates a TNU-tolerant block based on CMOS with a backup-restore block using MTJs. Simulation results incorporating process, voltage, and temperature (PVT) variations, bias temperature instability (BTI) impact, and Monte Carlo simulations demonstrate the balanced performance in terms of nonvolatility, robust partial TNU tolerance, and comprehensive overhead of the proposed latch.

This paper presents a radiation-tolerant voltage reference circuit based on atomic layer-deposited zinc oxide thinfilm transistors (ZnO TFTs), where both active and floating gate layers utilize ZnO films. Employing a dual-exponential current source method, we accurately simulate single-event transient currents induced by high-energy particles. Measurement results demonstrate that the proposed circuit achieves $5 \mu \mathrm{~s}$ recovery time without radiation hardening, reducible to $1 \mu \mathrm{~s}$ with hardening techniques. The circuit generates a 3.1 V reference voltage operating from 6 V to 10 V supply, with $18.78 \mathrm{mV} / \mathrm{V}$ line sensitivity and $0.72 \mu \mathrm{~W}$ static power consumption. Temperature stability is achieved through a complementary temperature coefficient. From $0^{\circ} \mathrm{C}$ to $80^{\circ} \mathrm{C}$, the temperature coefficient of VREF is $79.56 \mathrm{ppm} /{ }^{\circ} \mathrm{C}$, and the PSRR reaches -36.5 dB.

Accurate and efficient wafer defect detection is crucial in semiconductor manufacturing to maintain product quality and optimize yield. Traditional methods struggle with the complexity and diversity of modern wafer defect patterns. While deep learning approaches are effective, they are often resource-intensive, posing challenges for real-time deployment in industrial settings. To solve these problems, we propose an Efficient Modulated State Space Model (EM-SSM) for mixed-type wafer defect recognition, optimized with knowledge distillation to balance accuracy and efficiency. Our framework captures size-dependent relationships and improves defect-specific feature representation to recognize complex defects precisely. Specifically, we introduce an efficient directional modulation mechanism to refine spatial recognition of defect patterns. To further improve inference efficiency, we propose a deep-to-shallow distillation method that transfers knowledge from deeper networks to lighter networks, reducing inference time without compromising classification accuracy. Experimental results on the MixedWM38 wafer dataset with 38 defect types show that our model achieves 99.0% accuracy, outperforming traditional methods in both accuracy and efficiency. Our model offers a scalable solution for modern semiconductor defect detection.

This paper presents a FeFET-based non-volatile and single-event upset (SEU) recoverable latch, namely NVSRLO, which does not require any extra control signals. Simulation results show that the proposed latch provides non-volatility and SEU-recovery with optimized overhead. Compared with existing non-volatile latches, NVSRLO significantly reduces delay, power, and delay-power-area product at the cost of area.

As semiconductor technology advances, radiative-particle-induced soft errors and power consumption are becoming major concerns for digital circuits in aerospace applications. Radiation hardening by design and magnetic tunnel junctions (MTJs) are widely employed to address these concerns. In this paper, a novel latch, called TNURML, that can completely recover from triple-node upsets (TNUs), is proposed. The embedded MTJs provide non-volatility and are compatible with traditional CMOS processes. The TNURML employs a TNU-recovery module as well as a pair of MTJs for backup and recovery operations. Extensive simulations demonstrate the excellent TNU-recovery capability and non-volatility of the TNURML latch at the cost of slightly increased area overhead. The proposed TNURML latch reduces 43.63% of delay and 48.23% of power on average when compared to the state-of-the-art latches.

Building an interpretable fault detection and diagnostic model based on few-shot circuit samples and prior information about circuit structures is of significant importance. To fill these gaps, we propose a graph-based multitask transfer learning (TL) method for fault detection and diagnosis of circuits under few-shot conditions. First, in order to model the interconnections of nodes in a circuit, the sample data is organized into a graph structure, and a semi-supervised graph-based structural feature fusion method is proposed. The proposed method can accept graph-structured data and process the data using feature fusion methods. Second, to improve the model performance under few-shot conditions, two TL mechanisms are proposed for the topological structure characteristics of analog circuits as well as circuit signal characteristics. Finally, through a parameter-shared strategy, we propose a task transfer-based fault diagnosis approach. Experimental results on three different circuits show that the proposed method has the best diagnostic accuracy compared to typical detection and diagnosis schemes.

With the rapid advancement of semiconductor technologies, latches become increasingly sensitive to soft errors, especially triple node upsets (TNUs), in harsh radiation environments. In this article, we first propose a high-performance and area-efficient latch, namely, HALTRAV, featuring complete TNU-recovery. The storage portion of HALTRAV consists of 28 interlocked source-drain cross-coupled inverters (SCIs) for complete TNU-recovery with area efficiency and low delay. To mitigate the issue that node-upset-recovery verifications for existing latches highly relies on electronic design automation tools, we further propose an algorithm-based verification method that can automatically verify the node-upset-recovery of latches, which greatly simplifies the reliability-verification flow. Simulation results demonstrate the TNU-recovery of HALTRAV and also show that HALTRAV achieves 40.38%, 8.17%, and 31.89% reduction in delay, area, and delay-power–area product (DPAP) on average, respectively; however; it is at the cost of power as compared to typical latches that are TNU-recoverable. Comparison results also demonstrate the moderate sensitivity of HALTRAV to the impacts of the process, voltage, and temperature (PVT) variations.

As the CMOS technology continues to shrink, latches are becoming increasingly susceptible to multiple-node-upset caused by charge sharing in radiation environments. In this article, a low-cost quadruple-node-upset (QNU) self-recoverable latch based on cross-interlocking (Quad-CIRC) is proposed. By utilizing four cross-interlocking self-recoverable cells (CIRCs) for interlocking, complete QNU self-recovery is achieved with reduced sensitive nodes. Meanwhile, the majority of currently available QNU self-recoverable latches are primarily composed of C-elements-based redundancy, resulting in a significant increase in area overhead. However, Quad-CIRC effectively reduces area overhead while ensuring hardened capability through cross-interlocking of CIRCs. HSPICE-based simulations in 22 nm CMOS technology demonstrate that Quad-CIRC achieves a reduction of 69.08% on average of power consumption, an increase of 16.83% on average of delay, a reduction of 63.51% on average of power-delay-product (PDP), a reduction of 51.01% on average of area, a reduction of 83.44% on average of area-PDP (APDP), and an increase of 60.49% on average of critical charge, compared to five other QNU self-recoverable latches (QRHIL, MURLAV, LDAVPM,$QR-R_{11}-C_{2}$, and low-delay QNU self-recoverable).

This article presents radiation-hardened flip-flop (FF) designs capable of tolerating soft errors, e.g., single-node upsets (SNUs), double-node upsets (DNUs) and multiple-node upsets (MNUs). First, a 2-input FF and a 3-input FF are proposed as the baseline FFs that not only, respectively, tolerate SNUs and DNUs but also exhibit cost efficiency in terms of delay, power, and area. Through adding two stages of c-elements, a 4-input FF and a 5-input FF are proposed as the baseline FFs as well. Utilizing the structural characteristics of these FFs, an$N-1$input FF and an N input FF are proposed as the extended FFs capable of tolerating more node upsets. Moreover, a highly efficient algorithm for verifying MNU-tolerance of these FFs is proposed. Algorithm and HSPICE-tool-based verification results both demonstrate the MNU-tolerance for the proposed FFs with more inputs.

Soft errors have been a severe threat to the reliability of modern integrated circuits (ICs), making hardened latch designs indispensable for masking soft errors with redundancy. However, the added redundancy also masks production defects as soft errors; this makes it hard to detect defects in hardened latches, thus significantly reducing their reliability. Our previous work proposed the scan-test-aware hardened latch (STAHL) design, the first for addressing the issue of low defect detectability of hardened latch designs. However, STAHL still suffers from two problems: 1) it is not self-resilient to soft errors and 2) a STAHL-based scan design requires one additional control signal. This article proposes a high defect detectable and single-event-upset (SEU)-resilient robust (HIDER) latch to address the issues of the low defect detectability of existing hardened latches and the STAHLs lack of SEU-resilient capability. Two scan designs [HIDER-based scan-cell-S (HIDER-SC-S) and HIDER-based scan-cell-F (HIDER-SC-F)], as well as two corresponding test procedures, are proposed to fully test HIDER latch with only one control signal. Simulation results show that the HIDER latch achieves the highest defect coverage (DC) in both single latch cell detection and scan tests among all existing hardened latch designs. In addition, the HIDER latch has much lower power and a smaller delay than STAHL.

As a critical hardware security primitive for the authentication within the Internet of Things (IoT), the physical unclonable function (PUF) represents an innovative security design paradigm for integrated circuits. However, the linear challenge-response mapping of the arbiter PUF (APUF) and variants render these structures more susceptible to modeling attacks due to their delayed linear structure. In this article, we propose a nonlinearized demultiplexer time-to-digital converter (DEMUX-TDC) PUF. This PUF uses a quantized delay difference technique to alter the traditional response generation mechanism, demonstrating robust resistance against modeling attacks. First, the proposed PUF employs a segmented APUF variant structure configured in both front and back segmented modes to generate a source of delay difference entropy. Additionally, the scheme incorporates a multilayer differential tapped TDC circuit to quantize the delay differences into digital codes, followed by a linear feedback shift register (LFSR) to obfuscate the final output response. We further propose a highly secure mutual authentication protocol based on reconfigurable PUF, by leveraging the characteristics of front and back segments of the PUF’s challenge. Evaluation of the proposed scheme on the implementation of Xilinx Virtex-7 and Spartan-6 field-programmable gate array (FPGA) demonstrates that the uniqueness and uniformity can reach ideal value, in the condition of prediction accuracy across six modeling attacks remaining around 50%.

With the continuous advancement of CMOS technologies, soft errors, such as single-node upset (SNU) and double-node upset (DNU), caused by radiation in nanoscale integrated circuits, are becoming increasingly prominent. Meanwhile, transistor aging mitigation is indispensable for long-term robustness enhancement. First, to reduce the impact of radiation on circuits, we propose a novel DNU-recovery latch with low cost, namely, DURLC, only consisting of four dual-input C-elements (CEs) and four clock-gated input-split inverters for the storage of values. Second, we propose a DNU-recovery latch with moderate cost, namely, DURMC, based on seven CEs and four inverters, for convenience to optimize the latch to alleviate aging. The proposed DNU-recovery latch with mitigated aging is called DURMA. The latch employs a high-speed path to reduce delay without sacrificing performance when mitigating aging issues. Finally, we propose an algorithm-based verification method to validate the DNU recovery of the proposed latches. The simulation results show that, compared with the state-of-the-art robust latches, the proposed latches have the advantages of DNU recovery with moderate and even low cost, and meanwhile, aging is effectively mitigated for the DURMA latch.

Spintronic devices, such as magnetic tunnel junctions (MTJs), are promising for space applications due to their radiation hardness and nonvolatility. However, as semiconductor technology advances, CMOS peripheral circuits are becoming vulnerable to double node upset (DNU) as well as triple node upset (TNU). This brief proposes two nonvolatile and robust latch designs primarily composed of MTJs and C-elements (CEs). Both designs offer nonvolatility and self-recovery from multiple-node upsets. Simulation results demonstrate that the proposed latches provide nonvolatility and complete protection against multiple-node upsets with balanced overhead.

In nanoscale CMOS technology, harsh radiations in the environment can now easily cause soft errors, e.g., single-event transients (SETs) and triple node upsets (TNUs), severely affecting the reliability of space applications. In this article, TNUs tolerant and SET-pulses filtered latch (TUTPFL) with low power is proposed, which comprises from four input-stage C-elements (CEs), four inverters, and three output-stage CEs. The CEs’ delay differential enables the TUTPFL latch to effectively filter SET-pulse, while the CEs’ multilevel error-interception property enables the TUTPFL latch to tolerate any possible TNU. The results of HSPICE-based simulations and FPGA-based emulations demonstrate the TNU tolerance and SET filterability of the TUTPFL latch. Meanwhile, compared to the alternative radiation-hardened latches, the TUTPFL latch reduces power dissipation by roughly 20.43% on average.

As a core component in the field of information security, the true random number generator (TRNG) produces high-entropy random numbers by extracting unpredictable noise from the physical environment, exhibiting nonreproducibility and resistance to prediction. To address the challenges posed by interference in high-speed systems, maintaining stable throughput and entropy sources for TRNG, this article proposes an optimized TRNG that utilizes chaotic interference to refresh the cellular automata (IRCA) iterative algorithm. The IRCA-TRNG utilizes a self-timed ring oscillator (STR) and jitter to perturb the operation of chaotic cellular automata (CA) cells, achieving a high-throughput TRNG. The generated random sequences have successfully passed NIST SP800-22, TESTU01, NIST SP800-90B, and AIS-31 tests. A throughput of 1040 Mb/s has been achieved on Xilinx Artix-7 and PYNQ-K2 series development boards. Compared with the state-of-the-art works, the proposed TRNG demonstrates significant advantages in resource utilization and performance quality factors.

Modern powerful CMOS chips are usually highly integrated and implemented with aggressively shrunk technology nodes. In radiation environment, under charge-sharing mechanism, one particle striking can simultaneously impact multiple nodes causing double-node-upsets (DNUs) and triple-node-upsets (TNUs). In this paper, we propose an Interlocked Dual-circle Latch Design, namely IDLD, with low cost and TNU recovery for aerospace applications. IDLD consists of four transmission gates and twelve 2-input C-elements (CEs) implemented in 22nm CMOS process. Simulation results demonstrate the complete TNU recovery as well as cost-effectiveness for the proposed IDLD latch.

Nonvolatile memories are widely used in emerging energy-harvesting Internet-of-Things (IoT) applications, and nonvolatile memories constructed from FeFET devices hold great promise. This paper presents a nonvolatile and single-event-upset (SEU)-recoverable latch based on FeFET and CMOS for energyharvesting devices. The latch uses n-type FeFET devices to provide nonvolatility without any additional control signals. Moreover, since the soft error problem has become increasingly severe, radiation hardening by design gains a great attention as a promising approach to mitigate the reliability issue. The latch uses feedback interlocked loops with n-type FeFETs and C-elements, enabling it to provide nonvolatility and SEU-recovery simultaneously. Simulation results with Candence Virtuoso verifies that the proposed latch design has correct functioning with excellent performance compared to the state-of-the-art designs.

Physical Unclonable Functions (PUF) are important hardware security primitives used for generating keys and identity authentication, with wide applications in the Internet of Things security. However, the security of strong PUF faces serious threats from modeling attacks, especially in the case of Arbiter PUF and their variants that involve additive linear integration of entropy sources. This paper proposes a Ring-Oscillator-Integrated-Linear-Feedback-Shift-Register-based PUF (ROinLFSR PUF) that achieves immunity to modeling attacks by highly nonlinearly integrating independent responses from weak RO PUFs using a configurable LFSR. To increase the efficiency of entropy extraction in hardware resources, dual entropy sources extraction is performed on the period and duty cycle of RO. Python simulation and FPGA experimental results demonstrate that the proposed PUF has intrinsic resilience against modeling attacks. And the proposed PUF achieves good results in reliability, uniqueness, uniformity, and randomness.

This paper proposes a novel radiation-hardened high-reliability SRAM cell, namely SHRCO, with 12 transistors for robust value storage as well as 6 transistors for parallel access operations. Using separated and error-interceptive feedback paths, the proposed cell has a complete self-recoverability from single-node upset (SNUs) at all single nodes and an excellent self-recoverability from double-node upsets (DNUs) at a part of node pairs. In addition, the proposed cell has superior access operation speed due to the inclusion of extra parallel access transistors. Simulation results show that the proposed cell has the largest number of node pairs that can self-recover from DNUs. Moreover, compared to the existing radiation-hardened SRAM cells, the proposed cell saves 28% of read time and 3% of write time on average.

Soft-errors and aging are considered as two primary factors affecting the long-term reliability of aerospace integrated circuits (ICs). As one of the key components in aerospace ICs, latches play a pivotal role to ensure desirable circuit functionality. This paper presents a single-event-upset recovery latch, namely SRBML, with bias-temperature-instability (BTI)-mitigation. By optimizing its internal structure, the latch can recover from single-event-upsets (SEUs) and reduce the stress time of transistors in feedback loops to simultaneously mitigate the impact of BTI on the latch. Simulation results demonstrate that the soft error rate increase due to BTI is reduced by roughly 34% for SRBML after BTI-mitigation. In addition, the delay of SRBML is not affected, and the area and power increase are limited compared to BTI-unmitigated latches.

In advanced CMOS technologies, integrated circuits are sensitive to multiple-node-upsets (MNUs) induced in harsh radiation environments. The existing verification of the reliability of latches highly relies on electronic design automation (EDA) tools considering complex error-injection scenarios. In this paper, we propose a novel latch, namely MURLAV, protected against quadruple node-upsets (QNUs) induced in harsh radiation environments, as well as an algorithmic error-recovery verification method. The latch provides complete recovery from all QNUs with a formed redundant structure. The algorithm can simplify the verification process and demonstrate the QNU recovery for the proposed MURLAV latch. Simulation results demonstrate that the proposed latch can recover from any QNU and that it has lower area and delay overhead. Compared with existing latches of the same type, the proposed MURLAV latch achieves an overhead reduction of 34% in silicon area and 15% in delay on average at the cost of moderate power consumption.

True random number generators (TRNGs), as an important component of security systems, have received a lot of attention for their related research. The previous researches have provided a large number of TRNG solutions, however, they still failed to reach an excellent tradeoff in various performance metrics. This article presents a shift-registers metastability-based TRNG, which is implemented by compact reference units and comparison units. By forcing the D flip-flops in the shift-registers into the metastable state, it optimizes the problem that the conventional metastability entropy sources consume excessive hardware resources. And a new method of metastable randomness extraction is used to reduce the bias of metastable output. The proposed TRNG is implemented in Xilinx Spartan-6 and Virtex-6 FPGAs, which generate random sequences that pass the NIST SP800-22, NIST SP800-90B tests and show excellent robustness to voltage and temperature variations. This TRNG can consume only 3 slices of the FPGA, but it has a high throughput rate of 25 Mbit/s. In comparison with state-of-the-art FPGA-compatible TRNGs, the proposed TRNG achieves the highest figure of merit FOM, which means that the proposed TRNG significantly outperforms previous researches in terms of hardware resources, throughput rate, and operating frequency tradeoffs.

As semiconductor technologies scale down, radiative-particle-induced soft errors and static power consumption are becoming major concerns for digital circuits. Magnetic-tunnel-junctions (MTJs) are widely used to address these concerns. MTJs are nonvolatile (NV) and compatible with traditional CMOS processes. In this article, we first propose a double-node-upset (DNU) tolerant and NV latch, i.e., M-TPDICE-V2, providing high reliability. In addition, we further propose an advanced latch, namely, M-8C, that is able to completely recover from single-node upsets (SNUs) and DNUs. M-8C uses a DNU recovery module and a backup and restore module based on a pair of MTJs. Furthermore, we propose a universal backup and restore module suitable for any latch providing nonvolatility. We simulate the proposed latches using the Synopsys HSPICE tool with a 45-nm CMOS process model. Simulation results confirm the superior capabilities of our proposed M-TPDICE-V2 and M-8C latches. M-TPDICE-V2 exhibits strong SNU and DNU tolerance and nonvolatility, while the M-8C latch provides complete DNU recovery capabilities.

Non-volatile memory has a significant future in the Internet of Things and computation-in-memory applications. Among them, non-volatile memories using emerging FeFET devices have garnered significant attention. This paper proposes a novel P-type FeFET -based non-volatile latch. This design takes advantage of the unique characteristics of a P-type FeFET device to achieve non-volatility with no additional control signals. The Cadence simulation tool Virtuoso verifies that our proposed design has correct functioning with excellent power, area, and delay performance compared to state-of-the-art designs.

With the rapid advancement of CMOS technologies, integrated circuits are becoming more prone to soft errors, e.g., triple-node upsets (TNUs). In this paper, to effectively tolerate TNUs, an input-split C-element-based DICEs (IC-DICEs) based TNU-recovery latch is proposed. The latch employs three interlocked IC-DICEs to allow recovering from any TNU. Simulations demonstrate the TNU recovery of the latch, and also demonstrate that the proposed latch can reduce delay by 87.21%, area by 27.04%, and delay-area-power product (DAPP) by 87.44% on average, compared to the alternative latches.

With the advancement of CMOS technologies, circuits have become more vulnerable to soft errors, such as single-node-upsets (SNUs) and double-node-upsets (DNUs). To effectively provide nonvolatility as well as tolerance against DNUs caused by radiation, this paper proposes a nonvolatile and DNU resilient latch that mainly comprises two magnetic tunnel junction (MTJ), two inverters and eight C-elements. Since two MTJs are used and all internal nodes are interlocked, the latch can provide nonvolatility and recovery from all possible DNUs. Simulation results demonstrate the nonvolatility, DNU recovery and high performance of the proposed latch.

Ensuring the correct operation of modern VLSI circuits within safety-critical systems is essential since modern technology nodes are more susceptible to Early-Life Failures (ELFs) and radiation-induced Soft-Errors (SEs). Tackling both of these challenges leads to contradicting design requirements: Effective in-field ELF detection requires online-monitoring or periodic built-in self-testing with excellent cell-internal defect coverage. SE-hardened latch designs, however, are less testable because they are designed to mask cell-internal failures. We propose BiSTAHL, a new SE-hardened scan-cell design that is fully built-in self-testable for both production defects and ELFs.

Many applications have an inherent tolerance for insignificant inaccuracies. Full adders are key arithmetic functions for many error-tolerant applications. Approximate full adders are considered an efficient technique to trade off energy relative to performance and accuracy. In this paper, we propose four approximate full adders with low overhead. The proposed and the existing approximate full adders are classified into two groups according to their error distances. Simulation results show that, compared with the existing approximate full adders, in the first group, the proposed ones can reduce power-area-delay product (PADP) by 61.83%, power by 54.15%, area by 44.67%, and delay by 22.78%on average; in the second group, the proposed ones can reduce PADP by 97.01%, power by 93.43%, area by 24.98%, and delay by 36.14% on average.

For high-speed operations, low power consumption and small silicon area, transistors are being scaled aggressively. Meanwhile, circuit reliability is facing greater challenges in advanced technologies. In this paper, a highly reliable and low-power SRAM with double-node-upset (DNU) recovery, namely HRLP16T, is proposed for safety-critical fields. HRLP16T can recover from single-node-upset (SNU) at all the sensitive nodes, and it has eight node pairs recoverable from DNUs. Simulation results demonstrate its advantages in terms of delay and power consumption over typical existing SRAM cell designs.

With the rapid advancement of semiconductor technologies, integrated circuits, especially storage elements (e.g., latches) have become increasingly vulnerable to soft errors. In order to effectively tolerate double-node-upsets (DNUs) caused by radiation and reduce the power and area of latches, this paper proposes a DNU self-recoverable latch with low overhead in terms of power and area. The proposed latch mainly comprises seven 2-input C-elements and two inverters to achieve DNU self-recovery. Simulation results show that the proposed latch can recover from all possible DNUs and that it can reduce delay by 45.7%, power by 29.1%, area by 65.9%, and area-power-delay-product by 87.4%, on average, compared to typical existing DNU self-recoverable latches.

As CMOS processes continue to shrink, nano-scale CMOS latches have become increasingly sensitive to multiple-node upset (MNU) errors caused by radiation. To tolerate MNU, a novel quadruple-node-upset (QNU) self-recoverable latch is proposed in this paper. The proposed latch is mainly constructed from six blocks of three-level C-elements (TLCEs) and six inverters. With the mutual feedback of the various TLCEs, the proposed latch can recover from any QNU. Furthermore, due to the clock gating methodology and a high-speed transmission path, the proposed latch has lower overhead in terms of power dissipation and transmission delay. Simulation results show that the proposed latch achieves high reliability with moderate overhead compared to typical existing latches.

In deep nano-scale and high-integration CMOS technologies, storage circuits have become increasingly sensitive to charge-sharing-induced multiple-node-upsets (MNUs) that include double, triple, and quadruple node-upsets. Currently, verifications for error recovery of existing latches highly rely on EDA tools with complex error-injection combinations. In this article, a latch design protected against MNUs in the harsh radiation as well as an algorithm-based verification process is proposed. Due to the constructed redundant feedback loops, the latch can completely recover from any MNU. Algorithm-based verification and simulations both demonstrate the MNU recovery of the proposed latch. Simulation results demonstrate the low area overhead of the proposed latch compared with the only one existing of the same type.

The entropy source structure with embedded XOR gates in a ring oscillator (RO) as a true random number generator (TRNG) can improve the speed of accumulating jitter in the oscillator. However, the XOR gate has a certain response time to the input change, and when the input changes too fast, the XOR gate will output short pulses. In this paper, we propose a TRNG design based on a multi-ring convergence oscillator (MRCO) making use of the characteristics of short pulses. We study the output of the XOR gate when facing different inputs. By modeling the time of a fibonacci ring oscillator (FIRO) as an example, we find that the loss of short pulses in an inverter chain is the reason for making the FIRO enter into periodic oscillation. This phenomenon suppresses the accumulation of jitter and occurs periodically in existing structures. Our proposed structure uses independent sub-rings to accumulate jitter, allowing the main-ring to quickly generate short pulses to provide analog randomness. The proposed TRNG design is implemented in Xilinx Virtex-6 FPGA. The experimental results show that it has the highest ratio of throughput rate to hardware resources. The generated random sequence pass both NIST SP800-22 test and NIST SP800-90B test.

With technology scaling down, the vulnerability of circuits to radiation and the increase of static power have become severe concerns. Spintronic devices such as magnetic tunnel junction (MTJ) have been developed to cope with many concerns, among which reliability concerns [1]. Spintronic devices have attractive properties, such as non-volatility and compatibility with conventional CMOS fabrication process. Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magnetic latch, namely M-TPDICE, that can completely tolerate single-node upsets (SNUs) and double-node upsets (DNUs). Simulations of the proposed latch with the HSPICE tool with a 45 nm CMOS technology model have demonstrated the effectiveness of the proposed latch.

As the CMOS technology is continuously scaling down, nano-scale integrated circuits are becoming susceptible to harsh-radiation induced soft errors, such as double-node upsets (DNUs) and triple-node upsets (TNUs). This paper presents a shuttle C-elements based low-cost and robust latch (namely SCLCRL) that can recover from any TNU in harsh radiation environments. The latch comprises seven primary storage nodes and seven secondary storage nodes. Each pair of primary nodes feeds a secondary node through one C-element (CE) and each pair of secondary nodes feeds a primary node through another CE, forming redundant feedback loops to robustly retain values. Simulation results validate all key TNUs' recoverability features of the proposed latch. Simulation results also demonstrate that the proposed SCLCRL latch can approximately save 29% silicon area and 47% D-Q delay on average at the cost of moderate power, compared with the state-of-the-art TNU-recoverable reference latches of the same-type.

This paper proposes a novel sextuple cross-coupled dual-interlocked-storage-cell (DICE) based double-node-upset (DNU) recoverable and low-delay flip-flop (FF), namely SCDRL-FF, for aerospace applications. The SCDRL-FF mainly consists of sextuple cross-coupled DICEs controlled by clock-gating. The use of clock-gating based DICEs significantly reduces the CLK-Q transmission delay of the SCDRL-FF. Through the redundant and interlocked clock-gating based DICEs, the SCDRL-FF can provide complete DNU recoverability. Simulation results demonstrate the DNU recoverability of the SCDRL-FF and a 65% delay reduction on average compared with the state-of-the-art hardened FFs. The low delay overhead makes the proposed SCDRL-FF effectively applicable to high-performance applications and the DNU recoverability makes the proposed SCDRL-FF also suitable for aerospace applications.

Aggressive scaling of CMOS technologies requires to pay attention to the reliability issues of circuits. This paper presents two highly reliable RHBD 10T and 12T SRAM cells, which can protect against single-node upsets (SNUs) and double-node upsets (DNUs). The 10T cell mainly consists of two cross-coupled input-split inverters and the cell can robustly keep stored values through a feedback mechanism among its internal nodes. It also has a low cost in terms of area and power consumption, since it uses only a few transistors. Based on the 10T cell, a 12T cell is proposed that uses four parallel access transistors. The 12T cell has a reduced read/write access time with the same soft error tolerance when compared to the 10T cell. Simulation results demonstrate that the proposed cells can recover from SNUs and a part of DNUs. Moreover, compared with the state-of-the-art hardened SRAM cells, the proposed 10T cell can save 28.59% write access time, 55.83% read access time, and 4.46% power dissipation at the cost of 4.04% silicon area on average.

With the advancement of semiconductor technologies, nano-scale CMOS circuits have become more vulnerable to soft errors, such as single-node-upsets (SNUs) and double-node-upsets (DNUs). In order to effectively tolerate DNUs caused by radiation and reduce the delay and area consumption of latches, this paper proposes a DNU resilient latch in the nanoscale CMOS technology. The latch mainly comprises four input-split inverters and four 2-input C-elements. Since all internal nodes are interlocked, the latch can recover from all possible DNUs. Simulation results show that, compared with the state-of-the-art DNU self-recovery latch designs, the proposed latch can save 64.51% transmission delay and 56.88% delay-area-power-product (DAPP) on average, respectively.

With the aggressive reduction of CMOS transistor feature sizes, the soft error rate of nano-scale integrated circuits increases exponentially. In this paper, we propose a novel cost-optimized and robust latch, namely CRLHQ, hardened against quadruple-node-upsets (QNUs) for nanoscale CMOS technologies. The latch mainly comprises a 5×5 matrix based on interlocked source-drain cross-coupled inverters to robustly store logic values. Owing to the redundant constructed feedback loops, the latch can recover from all possible QNUs. Simulation results demonstrate all key QNUs' recovery of the proposed CRLHQ latch. Simulation results also show that the proposed latch can approximately reduce the D-Q delay by 44.3%, the silicon area by 7.3% and the delay-area-power product (DAPP) by 14.2%, compared with the state-of-the-art same-type reference latches that can recover from any QNU.

In space, the impact of radiative particles, such as neutrons and heavy ions, can change the node states of a flip-flop, thus resulting in loss of data. In this paper, a Highly reliable and Low power Radiation-hardened-by-design (RHBD) Flip-Flop cell, namely HLRFF, completely hardened against double-node-upsets (DNUs), is proposed for aerospace applications. The HLRFF is a master-slave structure. The master latch is mainly constructed from two 2-input C-elements (CEs) and one 2-input clock-gating based CE, while the slave latch has an additional keeper at the output stage. The verification results demonstrate that the proposed HLRFF is completely DNU-tolerant. Furthermore, compared to the state-of-the-art radiation-hardened FF cells, the proposed HLRFF can reduce power consumption by approximately 69%. However, only the proposed HLRFF is not only completely DNU-tolerant but also insensitive to high-impedance-state.

This paper proposes a 4-node-upset (4NU) recoverable and high-impedance-state (HIS) insensitive latch design, namely QRHIL, for highly robust computing in harsh radiation environments. The latch mainly comprises a 5×5 looped C-element matrix to store values and provide complete 4NU recovery. Owing to the multiple-level error-interception of the 5×5 C-element matrix, the latch can recover from all possible 4NUs; thus, the latch is insensitive to HIS. Simulation results demonstrate the 4NU-recovery of the proposed latch. The results also show that the latch can approximately save 46% D-Q delay and 46% CLK-Q delay owing to the use of a high-speed D-Q path and clock-gating, compared with the state-of-the-art 3NU-recoverable latch (TNURL) that is not 4NU-recoverable.

Technology scaling and charge-sharing make nano- scale CMOS latches become severely vulnerable to multiple-node upsets (MNUs). This paper proposes a triple-path dual- interlocked-storage-cell (TPDICE) and soft-error interceptive module (SIM) based 4-Node-Upset (4NU) completely hardened latch, namely 4NUHL latch, that can completely tolerate soft errors, such as 4NUs. The latch mainly consists of 2 TPDICEs and a 3-level SIM which comprises six 2-input C-elements. Owing to the single-node-upset self-recoverability and multiple storage nodes of TPDICEs and the soft-error interception capability of the SIM, the latch can provide complete 4NU tolerance. Simulation results demonstrate that the proposed 4NUHL latch is completely 4NU hardened. Furthermore, we use a high-speed path, clock-gating, and a few transistors to reduce overhead of the proposed latch. We compared the proposed latch with state-of- the-art hardened latches in terms of reliability and overhead to demonstrate the advantages of the proposed latch.

With the rapid advancement of design and manufacturing technologies of nano-scale CMOS circuits, latches are becoming increasingly sensitive to multiple-node-upsets caused by harsh radiation effects. In this paper, a Parallel Dual-interlocked-storage-cells (DICEs) and Dual-level C-elements (CEs) based 3-node-upset (3NU)-Tolerant Latch, namely PDDCTL, design for highly robust computing, is proposed. The latch comprises five transmission gates, two DICEs and three CEs. Due to the use of two single-node-upset self-recoverable DICEs and three error-interceptive CEs, the latch can provide complete 3NU-tolerance with low cost. Simulation results not only confirm the 3NU-tolerance of the proposed latch but also demonstrate that the delay-power-area product of the PDDCTL latch is reduced by 68.82% on average compared with the state-of-the-art 3NU hardened latch designs.

Due to the winding level of the thinned wafers and the surface roughness of silicon dies, the through-silicon vias (TSVs) defect tend to be clustered, reducing the yield of 3-D integrated circuit significantly. To tackle this fault clustering problem, the existing TSV repair methods adopt the TSV redundancy idea, which brings a major cost to 3-D integration. In this brief, a honeycomb-TDMA TSV design is proposed to mitigate the impact of multiple clustered faults without the need of redundant TSVs (RTSVs), thereby decreasing the area overhead and enhances the yield. The yield of the honeycomb-TDMA architecture can achieve 91.38%-99.67% for different benchmark circuits from IWLS 2005, which has the highest yield. Furthermore, our design achieves total additional hardware (timing delay overhead) reduction by 83.70%-86.85% (46.01%-55.96%), 66.89%-73.25% (29.41%-38.49%), 68.02%-74.20% (41.40%-52.20%), 60.60%-68.18% (18.09%-33.18%), and 75.86%-80.52% (3.05%-20.91%), respectively, compared with router-based, ring-based, group-based, cellular-based, and honeycomb-based methods. Therefore, the proposed architecture is the best choice in terms of yields, hardware overhead, and timing delay.

Regarding the interior non-local correlations of image content, the intra predictions in image/video coding standards have still not exploited them efficiently. In this article, we propose an intra coding method that leverages the geometric information extracted from the image content to strengthen the coding performance. During the process of image capturing, if the imaging plane of the camera is not fronto-parallel to the surface of an object in reality, the repetitive patterns on the object's surface in real world will appear with a scale shift in the image domain. Thus, the corresponding potential non-local redundancy cannot be removed through the direct utilization of intra block copy and its variants. To address this problem, we begin with a theoretic analysis into the perspective transformation matrix and derive the underlying geometric information that causes the scale shift in the image domain; afterwards, we propose an intra coding framework based on the geometric information to alleviate the scale shift. It is essential for the coding framework to realize block matching in the rectified domain. Our framework mainly consists of two components, i.e., the intra block copy in the rectified domain through planar perspective transformation to obtain a more accurate prediction for the current coding block and the non-local post-processing filtering in the rectified domain after decompression to achieve a better quality of the reconstructed image. The experimental results show that our proposed method can achieve as high as 18% and an average of 5.0% bit-rate saving on the common dataset Urban100 compared to the HEVC reference software HM-SCC-extension with intra block copy and non-local post-processing filtering.

In this paper, we propose a sextuple cross-coupled SRAM cell, namely SCCS18T, protected against double-node upsets. Since the proposed SCCS18T cell forms a large feedback loop for value retention and error interception, the cell can provide self-recoverability from any single-node upsets (SNUs) and partial double-node upsets (DNUs). Moreover, the proposed cell has optimized operation speed due to the use of six access transistors. Simulation results show that the SCCS18T cell can save approximately 65% read access time at the cost of 49% power dissipation and 50% silicon area on average, compared with typical hardened SRAM cells.

This paper proposes a cost-effective, high-impedance-state (HIS)-insensitive, triple-node-upset (TNU)-tolerant and single-event-transient (SET)-filterable latch, namely HITTSFL, to ensure high reliability with low-cost. The latch mainly comprises an output-level SET-filterable Schmitt-trigger and three inverters that make the values stored in three parallel single-node-upset (SNU)-recoverable dual-interlocked-storage-cells (DICEs) converge at a common node to tolerate any possible TNU. The latch does not use C-elements to be insensitive to the HIS. Simulation results demonstrate the TNU-tolerability and SET-filterability of the proposed HITTSFL latch. Moreover, due to the use of clock-gating technologies and fewer transistors, the proposed latch can reduce delay, power, and area by 76.65%, 6.16%, and 28.55%, respectively, compared with the state-of-the-art TNU hardened latch (TNUHL) that cannot filter SETs.

This paper presents a novel dual-interlocked storage-cell (DICE)-based double-node-upset (DNU) self-recoverable, namely DURI-FF, in the nano-scale CMOS technology. The master latch of the DURI-FF cell consists of three transmission gates (TGs) and three interlocked DICEs with three common nodes. The common nodes are connected to TGs for value initialization. The slave latch of the DURI-FF cell comprises six TGs, six inverters and three interlocked DICEs. The outputs of the inverters respectively feed the internal nodes of the slave latch. The interlocked DICEs make the master latch and the slave latch DNU self-recoverable. Simulation results validate the DNU self-recoverability of the proposed DURI-FF cell. Moreover, compared with the state-of-the-art hardened flip-flop cells, the proposed DURI-FF cell achieves roughly 43% delay reduction at the cost of moderate silicon area and power dissipation.

In this paper, a highly reliable SRAM cell, namely SESRS cell, is proposed. Since the cell has a special feedback mechanism among its internal nodes and has more access transistors compared to a standard SRAM cell, the SESRS cell provides the following advantages: (1) it can self-recover from single node upsets (SNUs) and double-node upsets (DNUs); (2) it can reduce power consumption by 49.78% and silicon area by 7.92%, compared with the only existing SRAM cell which can self-recover from all possible DNUs. Simulation results validate the robustness of the proposed SESRS cell. Moreover, compared with the state-of-the-art hardened SRAM cells, the proposed SESRS cell can reduce read access time by 61.93% on average.

In nano-scale CMOS technologies, storage cells such as latches are becoming increasingly sensitive to triple-node-upset (TNU) errors caused by harsh radiation effects. In the context of information assurance through redundant design, this article proposes a novel low-cost and TNU on-line self-recoverable latch design which is robust against harsh radiation effects. The latch mainly consists of a series of mutually interlocked 3-input Muller C-elements (CEs) that forms a circular structure. The output of any CE in the latch respectively feeds back to one input of some specified downstream CEs, making the latch completely self-recoverable from any possible TNU, i.e., the latch is completely TNU-resilient. Simulation results demonstrate the complete TNU-resiliency of the proposed latch. In addition, due to the use of fewer transistors and a high-speed path, the proposed latch reduces the delay-power-area product by approximately 91 percent compared with the state-of-the-art TNU hardened latch (TNUHL), which cannot provide a complete TNU-resiliency.

Due to the winding level of the thinned wafers and the surface roughness of silicon dies, the quality of through-silicon vias (TSVs) varies during the fabrication and bonding process. If one TSV exhibits a defect during its manufacturing process, the probability of multiple defects occurring in the TSVs neighboring the faulty TSV increases, i.e., the TSV defects tend to be clustered, which significantly reduces the yield of 3-D integrated circuit. To resolve the clustered TSV faults, router-based, ring-based, group-based, and cellular-based redundant TSV (RTSV) architectures were proposed. However, the repair rate is low and the hardware overhead as well as delay overhead is high. In this article, we propose a honeycomb-based RTSV architecture to utilize the area and delay more efficiently as well as to maintain high yield. The simulation results show that the proposed architecture has a 99.84% repair rate for uniform faults and an 81.42% repair rate for highly clustered faults. The proposed design achieves a 51.66% reduction of hardware overhead compared with the router-based design and a 20.69%, 46.93%, 34.17%, and 11.15% reduction of total delay compared with ring-based, router-based, group-based, and cellular-based methods, respectively.

In this brief, a cobweb-based redundant through-silicon-via (TSV) design is proposed with efficient hardware as well as high repair rate to repair clustered faulty TSVs (FTSVs). The experimental simulation results demonstrate that for highly clustered faults, the repair rate of the proposed RTSV method is 48.59% and 1.75% higher than that of the ring-based and router-based RTSV methods, respectively. Furthermore, the proposed design can achieve 63.93% and 16.34% hardware reductions compared with the router-based and the ring-based design, respectively.

To meet the requirements of both cost-effectiveness and high reliability for safety-critical terrestrial applications, this paper proposes a novel radiation hardened latch design, namely HLCRT. The HLCRT latch mainly consists of a single-node-upset self-recoverable cell, a 3-input C-element, and an inverter. If any two inputs of the C-element suffer from a double-node-upset (DNU), or if one node inside the cell together with another node outside the cell suffer from a DNU, the latch still has correct values on its output node, i.e., the latch is effectively DNU hardened. Simulation results demonstrate the DNU tolerance of the proposed latch. Moreover, due to the use of fewer transistors, clock gating technologies, and a high-speed path, the proposed latch saves about 444.80% delay, 150.50% power, 72.66% area, and 2029.63% delay-power-area product on average, compared with state-of-the-art DNU hardened latch designs.

The Aggressive technology scaling makes modern advanced SRAMs more and more sensitive to soft errors that include single-node upsets (SNUs) and double-node upsets (DNUs). This paper presents a novel Sextuple Cross-Coupled SRAM cell, namely SCCS cell, which can tolerate both SNUs and DNUs. The cell mainly consists of six cross-coupled input-split inverters, constructing a large error-interceptive feedback loop to robustly retain stored values. Since the cell has many redundant storage nodes, the cell achieves the following robustness: (1) the cell can self-recover from all possible SNU; (2) the cell can self-recover from partial DNUs; (3) the cell can avoid the occurrence of other DNUs due to node-separation. Simulation results validate the excellent robustness of the proposed cell. Moreover, compared with the state-of-the-art typical existing hardened cells, the proposed cell achieves an approximate 61% read access time as well as 12% write access time reduction at the costs of 47% power dissipation as well as 44% silicon area on average.

This paper presents a single-event double-upset (SEDU) self-recoverable and single-event transient (SET) pulse filterable latch design for low power applications in 22nm CMOS technology. The latch mainly consists of eight mutually feeding back C-elements and a Schmitt trigger. Simulation results have demonstrated both the SEDU self-recoverability and SET pulse filterability for the latch using redundant silicon area. Using clock gating technology, the latch saves about 54.85% power dissipation on average compared with the up-to-date SEDU self-recoverable latch designs which are not SET pulse filterable at all.

As modern technology nodes become more susceptible to soft errors, many radiation hardened latch designs have been proposed. However, redundant circuitry used to tolerate soft errors in such hardened latches also reduces the test coverage of cell-internal manufacturing defects. To avoid potential test escapes that lead to soft error vulnerability and reliability issues, this paper proposes a novel Scan-Test-Aware Hardened Latch (STAHL). Simulation results show that STAHL has superior defect coverage compared to previous hardened latches while maintaining full radiation hardening in function mode.

Nano-scale CMOS circuits are vulnerable to single-event triple-node-upsets (SETUs). This paper proposes the design of a novel CMOS latch to tolerate any SETU using single-node-upset-resilient cells converged at a highly reliable node. The latch makes use of three single-node-upset-resilient cells, each of which mainly consists of triple mutually feeding back 2-input C-elements. These cells have a common converged output node feeding back to the output of the latch, making the latch capable of tolerating any SETU. Simulation results not only confirm the SETU tolerance capability but also show a significant area-power-delay-product reduction of 96.81% for the proposed latch compared with the only existing SETU hardened latch.

Adaptive testing is a promising approach that practically ensures cost reduction and reliability for test strategy. In adaptive testing, the test content or pass/fail limits are not fixed as in conventional test, but depend on other test results of the currently or historically tested data. Based on recent progress in machine learning, a new Long Short-Term Memory (LSTM) which is more advanced than simple Recurrent Neuron Network (RNN) is proposed for defect screening. The simulation results have been compared with the other deep learning and traditional methods when patterns are increased and decreased. The comparisons show that the proposed RNN-based LSTM method has achieved remarkable improvements, i.e. 4.3% accuracy improvement and 2.32s time reduction during the test process.

This paper presents two novel memory cell designs that can completely tolerate double-node upsets. First, a layout dependent cell is proposed. Since the cell has many redundant storage nodes, the cell achieves the following robustness: 1) In the case of 1 being stored, the cell can self-recover from any double-node upset (DNU) as well as any single node upset (SNU); 2) in the case of 0 being stored, the cell can self-recover from any double-adjacent-node upset (DANU), partial double-separated-node upset (DSNU) as well as any SNU. Any other DSNU can be tolerated by the cell due to the use of the layout approach. Second, a layout-independent cell is proposed that can self-recover from any DNU as well as any SNU. Simulation results validate the robustness of the proposed cell designs. Furthermore, compared with typical existing radiation hardened memory cells, the proposed layout-dependent cell saves 55.60% read access time and 33.76% write access time at the costs of 4.28% power dissipation and 39.01% silicon area on average, still low compared with layout-independent cell designs.

This paper presents an aging-temperature-and-propagation induced pulse-broadening aware soft error rate (SER) estimation for nano-scale CMOS. To calculate the SER of circuits, logical masking effect, electrical effect and timing masking effect should be considered. In logical masking effect, a hybrid method using four-value probability and two-value probability is used; in electrical effect, pulse broadening induced by aging, temperature and PIPB is measured; in timing masking effect, failure rate of circuits is calculated. Finally, the SER of circuits is calculated using our proposed framework. Simulation results show that the average SER-increase of ISCAS'85 circuits is 61.2% under temperature from 0 to 120°C, 17.5% under aging from 0 to 10 years, and 137.8% under temperature-and-aging from 0°C-0 year to 120°C-10 years. The SER estimation efficiency and accuracy are ensured using Monte Carlo method.

This paper presents a novel low cost and double node upset (DNU) online self-recoverable latch design using radiation hardening by design (RHBD) technology. The latch mainly consists of 8 interlocked input-split inverters. Since all internal nodes are interlocked, if any of the possible node pairs occurs a DNU, the latch can restore back. Simulation results have demonstrated the DNU online self-recoverability and also demonstrated that the proposed latch design saves 71.68% transmission delay, 72.92% power dissipation and 93.69% comprehensive delay-power-area product (DPAP) on average, compared with the up-to-date DNU online self-recoverable latch designs.

This paper presents a novel double-node upset (DNU) tolerant latch through radiation-hardening-by-design combined with layout technique. The latch mainly comprises 6 interlocked cross-coupled input-split inverters. Due to the special feedback rules for the internal nodes, many interlocked feedback loops are constructed in the latch and the following robustness is achieved: 1) In the case of 0 being held, the latch can self-recover from any single node upset (SNU), any DNU including double-adjacent-node upset (DANU) and double-separated-node upset (DSNU); 2) In the case of 1 being held, the latch can self-recover from any SNU, any DANU and partial DSNU. However, using layout technique, as for any DSNU-sensitive node-pair, the nodes are separated, thus the latch can avoid any DSNU. Simulation results demonstrate the robustness of the proposed latch. Besides, compared with typical existing DNU hardened latch designs, the proposed latch approximately saves 80.25% area-power-delay product on average.

This paper presents a high-performance, low-cost, and double node upset (DNU) tolerant latch design. The latch mainly constructs from a 3-input Muller C-element at the output stage and a single node upset resilient cell for keeping data, and the cell mainly consists of triple mutual feedback 2-input Muller C-elements, thus the latch is DNU tolerant. Using fewer CMOS transistors, clock gating technique, and high-speed transmission path, the latch also performs with lower cost penalties. Simulation results have demonstrated the DNU tolerability and a ~97.78% area-power-delay product saving for the latch design on average compared with the DNU tolerant latch designs.

This brief presents a double-node-upset-resilient latch (DNURL) design in 22-nm CMOS technology. The latch comprises three interlocked single-node-upset-resilient cells and each of the cells mainly consists of three mutually feeding back Muller C-elements. Simulation results demonstrate the double-node upset resilience and a 73.0% delay-power-area product saving on average compared with the up-to-date DNURL designs.

This paper presents a novel low cost and double node upset tolerant latch design in 22nm CMOS technology. The latch mainly comprises a single node upset resilient cell which feeds back to a 3-input Muller C-element at output stage. Simulation results demonstrate the double node upset tolerance and an 81.2% area-power-delay product saving for the latch design on average.

As technology node entered the era of nanotechnology, a latch is much more susceptible to soft errors caused by energetic particles in space radiation environment. In order to enhance the Single Event Upset (SEU) -tolerance capability of a latch, this paper presents an interlocking soft error hardened latch (ISEHL) which is suitable for low-power circuits. The proposed latch is based on three C-elements which are errors tolerable, and the logic state of each C-element is determined by the output state of two other C-elements, which constitute an interlocking soft error hardened latch. The simulation results show that the proposed ISEHL latch can not only be applied to clock-gating circuits but also perform with 41% power as well as 95% Power Delay Product (PDP) saving as comparing with the FERST latch which performs an equivalent superior SEU-tolerance ability.